Resistive Switching Memory Devices Composed of Binary Transition Metal Oxides Using Sol−Gel Chemistry
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2020 ◽
Vol 67
(12)
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pp. 5484-5489
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2019 ◽
Vol 45
(5)
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pp. 5724-5730
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2018 ◽
Vol 52
(7)
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pp. 075103
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2019 ◽
Vol 214
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pp. 213-220
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