The Effect of Morphology on Electron Field-Effect Mobility in Disordered C60 Thin Films

Joe J. Kwiatkowski; Jarvist M. Frost; Jenny Nelson

doi:10.1021/nl803504q

The Effect of Morphology on Electron Field-Effect Mobility in Disordered C60 Thin Films

Nano Letters ◽

10.1021/nl803504q ◽

2009 ◽

Vol 9 (3) ◽

pp. 1085-1090 ◽

Cited By ~ 63

Author(s):

Joe J. Kwiatkowski ◽

Jarvist M. Frost ◽

Jenny Nelson

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Mobility ◽

Electron Field

Electrical and Optical Properties of Nano-Crystalline GaN and Nano-Crystalline GaN:H thin Films

MRS Proceedings ◽

10.1557/proc-467-373 ◽

1997 ◽

Vol 467 ◽

Cited By ~ 2

Author(s):

S. Kobayashi ◽

S. Nonomura ◽

K. Abe ◽

T. Gotoh ◽

S. Hirata ◽

...

Keyword(s):

Thin Films ◽

Thermal Annealing ◽

Field Effect ◽

Annealing Treatment ◽

Drain Current ◽

Localized States ◽

Field Effect Mobility ◽

Hydrogen Incorporation ◽

Nano Crystalline ◽

Gan Film

ABSTRACTNano-crystalline GaN (nc-GaN) and hydrogenated nc-GaN (nc-GaN:H) thin films and thin film transistors (TFT) prepared by a reactive sputtering method have been studied. Hydrogen incorporation in nc-GaN film induces localized states at mid-gap energy. Thermal annealing at 400 °C and 600 °C creates mid-gap states which is detectable by electron spin resonance. Further thermal annealing treatment at 800 °C reduces the deep states in nc-GaN and nc-GaN:H. Photoluminescence spectra of the nc-GaN film have two broad peaks at 2.4 eV and 3.2 eV. The source-drain current voltage characteristics of the nc-GaN TFT is demonstrated for the first time. The obtained field effect mobility is 10−4 cm2/V-s. Thermal annealing at 800 °C improves the field effect mobility to 10−2 cm2/V-s.

Hall mobility and field effect mobility studies on PbTe HWE thin films

Applications of Surface Science ◽

10.1016/0378-5963(85)90206-5 ◽

1985 ◽

Vol 22-23 ◽

pp. 731-736 ◽

Cited By ~ 1

Author(s):

P.R. Vaya ◽

J. Majhi ◽

B.S.V. Gopalam ◽

C. Dattatreyan

Keyword(s):

Thin Films ◽

Hall Mobility ◽

Field Effect ◽

Field Effect Mobility ◽

Mobility Studies

A New Gate Dielectric for Highly Stable Amorphous-Silicon Thin-Film Transistors With $\sim\!\! \hbox{1.5-cm}^{2}/\hbox{V} \cdot \hbox{s}$ Electron Field-Effect Mobility

IEEE Electron Device Letters ◽

10.1109/led.2009.2015779 ◽

2009 ◽

Vol 30 (5) ◽

pp. 502-504 ◽

Cited By ~ 7

Author(s):

Lin Han ◽

P. Mandlik ◽

S. Wagner

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Mobility ◽

Silicon Thin Film ◽

Electron Field

Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H2Ambient

Applied Physics Express ◽

10.1143/apex.1.041801 ◽

2008 ◽

Vol 1 ◽

pp. 041801 ◽

Cited By ~ 15

Author(s):

Takamichi Yokoyama ◽

Chang Bum Park ◽

Kosuke Nagashio ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Thin Films ◽

Grain Size ◽

Field Effect ◽

Low Pressure ◽

Size Increase ◽

Field Effect Mobility

Microcrystalline silicon with high electron field-effect mobility deposited at 230°C

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(99)00934-5 ◽

2000 ◽

Vol 266-269 ◽

pp. 1260-1264 ◽

Cited By ~ 31

Author(s):

M Mulato ◽

Y Chen ◽

S Wagner ◽

A.R Zanatta

Keyword(s):

Field Effect ◽

High Electron ◽

Field Effect Mobility ◽

Microcrystalline Silicon ◽

Electron Field

Nanocrystalline Silicon TFTs With 50 nm Thick Deposited Channel Layer, 10 cm2/Vs Electron Mobility and 108 On/Off Current Ratio

MRS Proceedings ◽

10.1557/proc-664-a17.5 ◽

2001 ◽

Vol 664 ◽

Cited By ~ 2

Author(s):

Robert B. Min ◽

Sigurd Wagner

Keyword(s):

Field Effect ◽

High Mobility ◽

Nanocrystalline Silicon ◽

Channel Length ◽

High Electron ◽

Field Effect Mobility ◽

Current Ratio ◽

Gate Structure ◽

Electron Field ◽

Top Gate Structure

ABSTRACTThin film transistors were made using 50 nm thick directly deposited nanocrystalline silicon channel layers. The transistors have coplanar top gate structure. The nanocrystalline silicon was deposited from discharges in silane, hydrogen and silicon tetrafluoride. The transistors combine a high electron field effect mobility of ∼ 10 cm2/Vs with a low “off” current of ∼ 10−14 A per µm of channel length, and an “on”/“off” current ratio of ∼ 108. This result shows that directly deposited silicon can combine high mobility with low “off” currents.

Development of the field-effect mobility in thin films of F16PcCu characterized by electrical in situ measurements during device preparation

Organic Electronics ◽

10.1016/j.orgel.2011.04.016 ◽

2011 ◽

Vol 12 (8) ◽

pp. 1376-1382 ◽

Cited By ~ 22

Author(s):

C. Keil ◽

D. Schlettwein

Keyword(s):

Thin Films ◽

Field Effect ◽

In Situ Measurements ◽

Field Effect Mobility

Temperature dependence of electron field effect mobility of laser recrystallized silicon film metal‐oxide‐semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.331252 ◽

1982 ◽

Vol 53 (6) ◽

pp. 4250-4254 ◽

Cited By ~ 2

Author(s):

Han‐Sheng Lee

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Silicon Film ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Effect Mobility ◽

Electron Field

Tunable Crystallinity in Regioregular Poly(3-Hexylthiophene) Thin Films and Its Impact on Field Effect Mobility

Advanced Functional Materials ◽

10.1002/adfm.201002729 ◽

2011 ◽

Vol 21 (14) ◽

pp. 2652-2659 ◽

Cited By ~ 95

Author(s):

Avishek R. Aiyar ◽

Jung-Il Hong ◽

Rakesh Nambiar ◽

David M. Collard ◽

Elsa Reichmanis

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Mobility ◽

Regioregular Poly

Field effect mobility in thin films of poly(3-alkylthiophene)

Synthetic Metals ◽

10.1016/0379-6779(89)90615-2 ◽

1989 ◽

Vol 28 (1-2) ◽

pp. 863-869 ◽

Cited By ~ 5

Author(s):

A. Assadi ◽

C. Svensson ◽

M. Willander ◽

O. Inganäs

Keyword(s):

Thin Films ◽

Field Effect ◽

Field Effect Mobility