Electrical and Optical Properties of Nano-Crystalline GaN and Nano-Crystalline GaN:H thin Films

1997 ◽  
Vol 467 ◽  
Author(s):  
S. Kobayashi ◽  
S. Nonomura ◽  
K. Abe ◽  
T. Gotoh ◽  
S. Hirata ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Field Effect ◽  
Annealing Treatment ◽  
Drain Current ◽  
Localized States ◽  
Field Effect Mobility ◽  
Hydrogen Incorporation ◽  
Nano Crystalline ◽  
Gan Film

ABSTRACTNano-crystalline GaN (nc-GaN) and hydrogenated nc-GaN (nc-GaN:H) thin films and thin film transistors (TFT) prepared by a reactive sputtering method have been studied. Hydrogen incorporation in nc-GaN film induces localized states at mid-gap energy. Thermal annealing at 400 °C and 600 °C creates mid-gap states which is detectable by electron spin resonance. Further thermal annealing treatment at 800 °C reduces the deep states in nc-GaN and nc-GaN:H. Photoluminescence spectra of the nc-GaN film have two broad peaks at 2.4 eV and 3.2 eV. The source-drain current voltage characteristics of the nc-GaN TFT is demonstrated for the first time. The obtained field effect mobility is 10−4 cm2/V-s. Thermal annealing at 800 °C improves the field effect mobility to 10−2 cm2/V-s.

scholarly journals Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

2019 ◽  
Vol 14 (1) ◽  
pp. 53-63 ◽  
Author(s):  
M. S. Bashar ◽  
Rummana Matin ◽  
Munira Sultana ◽  
Ayesha Siddika ◽  
M. Rahaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Localized States ◽  
Stoichiometric Ratio ◽  
Deposited Films

AbstractThe ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24–3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

Improving Stability of Pentacene Field-Effect Transistors with Post-Annealing

2007 ◽  
Vol 1029 ◽  
Author(s):  
Shun-Wei Liu ◽  
Jia-Cing Huang ◽  
Chih-Chien Lee ◽  
Chin-Ti Lee ◽  
Juen-Kai Wang
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Annealing Treatment ◽  
Drain Current ◽  
Semiconductor Layer ◽  
Post Annealing ◽  
Source Voltage ◽  
Effect Transistor ◽  
Improved Performance ◽  
Contact Field

AbstractIn this report, we demonstrate that the performance and stability of pentacene top-contact field-effect transistor can be greatly improved with post-annealing treatment. After post-annealing at 90°C for 12 hours in nitrogen environment, the hole field-effect mobility of 0.3 cm2/Vs and the on/off current ratio of 107 were achieved, demonstrating 100% improvement in performance after the post-annealing treatment. The decay rate of drain current at constant gate and drain-source voltage was found to be decreased by more than 40%. The improved performance is attributed to the elimination of trapped holes and lattice defects in the organic semiconductor layer due to the post-annealing process.

The Effect of Morphology on Electron Field-Effect Mobility in Disordered C60 Thin Films

Nano Letters ◽  
2009 ◽  
Vol 9 (3) ◽  
pp. 1085-1090 ◽  
Author(s):  
Joe J. Kwiatkowski ◽  
Jarvist M. Frost ◽  
Jenny Nelson
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Electron Field

Thermal Annealing Effect on the Thermal and Electrical Properties of Organic Semiconductor Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1637-1643 ◽  
Author(s):  
Xinyu Wang ◽  
Boyu Peng ◽  
Paddy Chan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Annealing Temperature ◽  
Waste Heat ◽  
Annealing Effect ◽  
Field Effect Mobility ◽  
Thermal And Electrical Properties

ABSTRACTThe thermal and electrical properties of organic semiconductor are playing critical roles in the device applications especially on the devices with large area. Although the effect may be minor in a single device like field effect transistors, the unwanted waste heat would cause much more severe problems in large-scale devices as the power density will go up significantly. The waste heat would lead to performance degradation or even failure of the devices, and thus a more detailed study on the thermal conductivity and carrier mobility of the organic thin film would be beneficial to predict the limits of the device or design a thermally stable device. Here we explore the thermal annealing effect on the thermal and electrical properties of the small molecule organic semiconductor, dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT). After the post deposition thermal annealing, the grain size of the film increases and in-plane crystallinity improves while cross-plane crystallinity keeps relatively constant. We demonstrated the cross-plane thermal conductivity is independent of the thermal annealing temperature and high annealing temperature will reduce the space-charge-limited current (SCLC) mobility. When the annealing temperature increase from 24 °C to 140 °C, the field effect mobility shows a gradual increase while the threshold voltage shifts from positive to negative. The different dependence of the SCLC mobility and field effect mobility on the annealing temperature suggest the improvement of the film crystallinity after thermal annealing is not the only dominating effect. Our investigation provides the constructive information to tune the thermal and electrical properties of organic semiconductors.

scholarly journals Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 859 ◽  
Author(s):  
Wei-Kai Wang ◽  
Kuo-Feng Liu ◽  
Pi-Chuen Tsai ◽  
Yi-Jie Xu ◽  
Shih-Yung Huang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Average Crystallite Size ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atmospheric Conditions

Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.

Hall mobility and field effect mobility studies on PbTe HWE thin films

1985 ◽  
Vol 22-23 ◽  
pp. 731-736 ◽  
Author(s):  
P.R. Vaya ◽  
J. Majhi ◽  
B.S.V. Gopalam ◽  
C. Dattatreyan
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Mobility Studies

Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H2Ambient

2008 ◽  
Vol 1 ◽  
pp. 041801 ◽  
Author(s):  
Takamichi Yokoyama ◽  
Chang Bum Park ◽  
Kosuke Nagashio ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Field Effect ◽  
Low Pressure ◽  
Size Increase ◽  
Field Effect Mobility

Thermal annealing-induced enhancement of the field-effect mobility of regioregular poly(3-hexylthiophene) films

2006 ◽  
Vol 100 (11) ◽  
pp. 114503 ◽  
Author(s):  
Shinuk Cho ◽  
Kwanghee Lee ◽  
Jonathan Yuen ◽  
Guangming Wang ◽  
Daniel Moses ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Regioregular Poly
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