Use of a High-Pressure/Variable-Temperature Infrared Flow Cell To Examine the Reaction Kinetics of the Migratory Insertion Intermediate (η5-C5H5)Fe(CO)C(O)CH3by Time-Resolved Spectroscopy

1999 ◽  
Vol 18 (21) ◽  
pp. 4362-4366 ◽  
Author(s):  
Steven M. Massick ◽  
Peter C. Ford
1978 ◽  
Vol 7 (1) ◽  
pp. 49-53 ◽  
Author(s):  
J. S. Bodenheimer ◽  
W. F. Sherman ◽  
G. R. Wilkinson

1965 ◽  
Vol 29 (12) ◽  
pp. 988-994,a1 ◽  
Author(s):  
Tadao Ishii ◽  
Yousuke Maekawa ◽  
Gen Takeya

2006 ◽  
Vol 103 (25) ◽  
pp. 9410-9415 ◽  
Author(s):  
T. K. Kim ◽  
M. Lorenc ◽  
J. H. Lee ◽  
M. Lo Russo ◽  
J. Kim ◽  
...  

1999 ◽  
Vol 38 (10) ◽  
pp. 3802-3811 ◽  
Author(s):  
Rajeev Agnihotri ◽  
Shriniwas S. Chauk ◽  
Santhosh K. Misro ◽  
Liang-Shih Fan

1977 ◽  
Vol 39 (13) ◽  
pp. 851-851
Author(s):  
J. E. Lawler ◽  
J. W. Parker ◽  
L. W. Anderson ◽  
W. A. Fitzsimmons

2015 ◽  
Vol 1088 ◽  
pp. 348-352
Author(s):  
Yu Gang Li ◽  
Ling Qi Kong

With Raney nickel catalyst and aniline solvent, the reaction kinetics of catalytic hydrogenation of isophthalonitrile (IPN) for meta-xylenediamine (MXDA) preparation is studied in this paper. The experiment is conducted in a 1L büchiglas high-pressure hydrogenation reactor under the condition of the reaction temperature (100°C) and the reaction pressure (35 bar). The results shows that the kinetics equation proposed in this paper can be used to predict the response speed of IPN accurately.


2003 ◽  
Vol 770 ◽  
Author(s):  
Andrew R. Wilkinson ◽  
Robert G. Elliman

AbstractHydrogen passivation of non-radiative defects increases the luminescence intensity from silicon nanocrystals. In this study, photoluminescence (PL) and time-resolved PL were used to investigate the chemical kinetics of the hydrogen passivation process. Isochronal and isothermal annealing sequences were used to determine the reaction kinetics for the absorption and desorption of hydrogen, using the generalised consistent simple thermal (GST) model proposed by Stesmans for Pb defects at planar Si/SiO2 interfaces. This included determination of the activation energies and rate constants for the forward and reverse reactions as well as the associated spread in activation energies. The reaction kinetics determined from such measurements were found to be in excellent agreement with those for the passivation of Pb defects at planar Si/SiO2 interfaces, suggesting the nanocrystal emission process is also limited by such defects. These results provide useful model data as well as insight into the processing conditions needed to achieve optimum passivation in H2. As an extension to the work, a preliminary study into passivation by atomic hydrogen was pursued via a post-metallization Al anneal (alneal). A considerable gain in luminescence efficiency was achieved over the previously optimised passivation in H2.


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