Comparison of Two Methods of Methyl Group Grafting to the Silica Thin Film Surface and Its Tribological Properties Measured by Atomic Force Microscopy

2004 ◽  
Vol 16 (3) ◽  
pp. 181-185 ◽  
Author(s):  
J.P. Grobelny ◽  
G. Celichowski ◽  
M. Cichomski ◽  
A.J. Kulik ◽  
I.J. Piwoński ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Tribological Properties ◽  
Film Surface ◽  
Methyl Group ◽  
Force Microscopy ◽  
Thin Film Surface ◽  
Atomic Force ◽  
Silica Thin Film

scholarly journals Sensitivity Enhancement of Pb(II) Ion Detection in Rivers Using SPR-Based Ag Metallic Layer Coated with Chitosan–Graphene Oxide Nanocomposite

Sensors ◽  
2019 ◽  
Vol 19 (23) ◽  
pp. 5159 ◽  
Author(s):  
Nurul Fariha Lokman ◽  
Nur Hidayah Azeman ◽  
Fatihah Suja ◽  
Norhana Arsad ◽  
Ahmad Ashrif A Bakar
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Detection Accuracy ◽  
Ion Detection ◽  
Force Microscopy ◽  
Adsorption Sites ◽  
Thin Film Surface ◽  
Atomic Force

The detection of Pb(II) ions in a river using the surface plasmon resonance (SPR)-based silver (Ag) thin film technique was successfully developed. Chitosan–graphene oxide (CS-GO) was coated on top of the Ag thin film surface and acted as the active sensing layer for Pb(II) ion detection. CS-GO was synthesized and characterized, and the physicochemical properties of this material were studied prior to integration with the SPR. In X-ray photoelectron spectroscopy (XPS), the appearance of the C=O, C–O, and O–H functional groups at 531.2 eV and 532.5 eV, respectively, confirms the success of CS-GO nanocomposite synthesis. A higher surface roughness of 31.04 nm was observed under atomic force microscopy (AFM) analysis for Ag/CS-GO thin film. The enhancement in thin film roughness indicates that more adsorption sites are available for Pb(II) ion binding. The SPR performance shows a good sensor sensitivity for Ag/CS-GO with 1.38° ppm−1 ranging from 0.01 to 5.00 ppm of standard Pb(II) solutions. At lower concentrations, a better detection accuracy was shown by SPR using Ag/CS-GO thin film compared to Ag/CS thin film. The SPR performance using Ag/CS-GO thin film was further evaluated with real water samples collected from rivers. The results are in agreement with those of standard Pb(II) ion solution, which were obtained at incidence angles of 80.00° and 81.11° for local and foreign rivers, respectively.

A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy

2011 ◽  
Vol 14 (8) ◽  
pp. H311 ◽  
Author(s):  
J. Y. Son ◽  
D.-Y. Kim ◽  
H. Kim ◽  
W. J. Maeng ◽  
Y.-S. Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Resistive Switch ◽  
Force Microscopy ◽  
Atomic Force

Scanning Tunneling Microscopy and Atomic Force Microscopy Investigation of Organic Tetracyanoquinodimethane Thin Films

1997 ◽  
Vol 12 (8) ◽  
pp. 1942-1945 ◽  
Author(s):  
H. J. Gao ◽  
H. X. Zhang ◽  
Z. Q. Xue ◽  
S. J. Pang
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Scanning Tunneling Microscopy ◽  
Pyrolytic Graphite ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Investigation

Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) investigation of tetracyanoquinodimethane (TCNQ) and the related C60-TCNQ thin films is presented. Periodic molecular chains of the TCNQ on highly oriented pyrolytic graphite (HOPG) substrates were imaged, which demonstrated that the crystalline (001) plane was parallel to the substrate. For the C60-TCNQ thin films, we found that there were grains on the film surface. STM images within the grain revealed that the well-ordered rows and terraces, and the parallel rows in different grains were generally not in the same orientation. Moreover, the grain boundary was also observed. In addition, AFM was employed to modify the organic TCNQ film surface for the application of this type of materials to information recording and storage at the nanometer scale. The nanometer holes were successfully created on the TCNQ thin film by the AFM.

Effect of ultra-thin Cu underlayer on the magnetic properties of Ni80Fe50 / Fe50Mn50 films

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Exchange Bias ◽  
Film Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Maximum Value ◽  
Film Roughness

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.

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