Species dependent energies in upward directed ion beams over auroral arcs as observed with FAST TEAMS

Abstract. Above the polar caps and during prolonged periods of northward IMF, the Cluster satellites detect upward accelerated ion beams with energies up to a few keV. They are associated with converging electric field structures indicating that the acceleration is caused by a quasi-static field-aligned electric field that can extend to altitudes higher than 7 RE (Maggiolo et al., 2006; Teste et al., 2007). Using the AMDA science analysis service provided by the Centre de Données de la Physique des Plasmas, we have been able to extract about 200 events of accelerated upgoing ion beams above the polar caps from the Cluster database. Most of these observations are taken at altitudes lower than 7 RE and in the Northern Hemisphere. We investigate the statistical properties of these ion beams. We analyze their geometry, the properties of the plasma populations and of the electric field inside and around the beams, as well as their dependence on solar wind and IMF conditions. We show that ~40 % of the ion beams are collocated with a relatively hot and isotropic plasma population. The density and temperature of the isotropic population are highly variable but suggest that this plasma originates from the plasma sheet. The ion beam properties do not change significantly when the isotropic, hot background population is present. Furthermore, during one single polar cap crossing by Cluster it is possible to detect upgoing ion beams both with and without an accompanying isotropic component. The analysis of the variation of the IMF BZ component prior to the detection of the beams indicates that the delay between a northward/southward turning of IMF and the appearance/disappearance of the beams is respectively ~2 h and 20 min. The observed electrodynamic characteristics of high altitude polar cap ion beams suggest that they are closely connected to polar cap auroral arcs. We discuss the implications of these Cluster observations above the polar cap on the magnetospheric dynamics and configuration during prolonged periods of northward IMF.

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Axial Observation of X-Ray Spectra from a Beam-Foil Source

International Astronomical Union Colloquium ◽

10.1017/s0252921100108048 ◽

1988 ◽

Vol 102 ◽

pp. 339-342

Author(s):

J.M. Laming ◽

J.D. Silver ◽

R. Barnsley ◽

J. Dunn ◽

K.D. Evans ◽

...

Keyword(s):

Spectral Resolution ◽

Heavy Ion ◽

Ion Beams ◽

Beam Axis ◽

Doppler Broadening ◽

X Ray ◽

Beam Foil

AbstractNew observations of x-ray spectra from foil-excited heavy ion beams are reported. By observing the target in a direction along the beam axis, an improvement in spectral resolution, δλ/λ, by about a factor of two is achieved, due to the reduced Doppler broadening in this geometry.

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Preparation of TEM samples by focused ion beams

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138968 ◽

1995 ◽

Vol 53 ◽

pp. 518-519

Author(s):

John F. Walker ◽

J C Reiner ◽

C Solenthaler

Keyword(s):

Integrated Circuit ◽

Polycrystalline Silicon ◽

Field Effect Transistor ◽

High Spatial Resolution ◽

Ion Beam ◽

Ion Beams ◽

Focused Ion Beams ◽

Precise Location ◽

Effect Transistor ◽

Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

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Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130298 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1132-1133

Author(s):

Mark Denker ◽

Jennifer Wall ◽

Mark Ray ◽

Richard Linton

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Incidence Angle ◽

Ion Beam ◽

Depth Profiling ◽

Depth Resolution ◽

Ion Beams ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Trace Impurities ◽

Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

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Materials Research with Ion Beams

10.1007/978-3-662-02794-3 ◽

1992 ◽

Cited By ~ 1

Keyword(s):

Ion Beams ◽

Materials Research

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Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

MRS Proceedings ◽

10.1557/proc-223-215 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 3

Author(s):

Richard B. Jackman ◽

Glenn C. Tyrrell ◽

Duncan Marshall ◽

Catherine L. French ◽

John S. Foord

Keyword(s):

Ion Beam ◽

Ion Beams ◽

Low Energy ◽

Ion Beam Etching ◽

Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

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