Materials Research with Ion Beams

1992 ◽  
Keyword(s):  
Ion Beams ◽  
Materials Research

Ion Beams in Materials Research and Technology

1990 ◽  
Vol 21 (1) ◽  
pp. 18-18
Author(s):  
J.A. Pals ◽  
B. Stritzker
Keyword(s):  
Ion Beams ◽  
Materials Research

Future Directions for Ion Beam Technology and Research: Forum Report

2011 ◽  
Vol 1354 ◽  
Author(s):  
John E.E. Baglin ◽  
Daryush Ila
Keyword(s):  
State Of The Art ◽  
Ion Beam ◽  
Ion Beams ◽  
High Impact ◽  
Global Community ◽  
Future Directions ◽  
Current State ◽  
Remarkable Degree ◽  
The Future ◽  
Materials Research

ABSTRACTAs an integral part of the Symposium on "Ion Beams - Applications from Nanoscale to Mesoscale" at the MRS Spring 2011 Meeting, participants were invited to join two open “brainstorming” Forum Discussions, intended to highlight opportunities for application of ion beam techniques in advancing the frontiers of materials research and making high impact contributions to solving some of the world’s major issues for the future. Participants were invited to imagine freely how the field might develop (or be steered) in the next 5-10 years, in the light of the current state of the art, and in the light of the emerging needs of the global community.The resulting ideas and suggestions led to thoughtful discussions, that displayed a remarkable degree of consensus on future directions, opportunities and challenges for the field. This paper attempts to capture and report briefly the spectrum of ideas and the recommended priorities that emerged from the resulting discussions.

Axial Observation of X-Ray Spectra from a Beam-Foil Source

1988 ◽  
Vol 102 ◽  
pp. 339-342
Author(s):  
J.M. Laming ◽  
J.D. Silver ◽  
R. Barnsley ◽  
J. Dunn ◽  
K.D. Evans ◽  
...  
Keyword(s):  
Spectral Resolution ◽  
Heavy Ion ◽  
Ion Beams ◽  
Beam Axis ◽  
Doppler Broadening ◽  
X Ray ◽  
Beam Foil

AbstractNew observations of x-ray spectra from foil-excited heavy ion beams are reported. By observing the target in a direction along the beam axis, an improvement in spectral resolution, δλ/λ, by about a factor of two is achieved, due to the reduced Doppler broadening in this geometry.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

High-voltage Electron Microscopy: Where it is and where it may be going

1995 ◽  
Vol 53 ◽  
pp. 80-81
Author(s):  
Charles W. Allen
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Construction Cost ◽  
Research Community ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Materials Research

High voltage TEMs were introduced commercially thirty years ago, with the installations of 500 kV Hitachi instruments at the Universities of Nogoya and Tokyo. Since that time a total of 51 commercial instruments, having maximum accelerating potentials of 0.5-3.5 MV, have been delivered. Prices have gone from about a dollar per volt for the early instruments to roughly twenty dollars per volt today, which is not so unreasonable considerinp inflation and vastly improved electronics and other improvements. The most expensive HVEM (the 3.5 MV instrument at Osaka University) cost about 5 percent of the construction cost of the USA's latest synchrotron.Table 1 briefly traces the development of HVEM in this country for the materials sciences. There are now only three available instruments at two sites: the 1.2 MeV HVEM at Argonne National Lab, and 1.0 and 1.5 MeV instruments at Lawrence Berkeley National Lab. Fortunately, both sites are user facilities funded by DOE for the materials research community.

ANALISIS VARIASI JUMLAH SUDU TURBIN BERPENAMPANG PELAT DATAR PADA TURBIN AIR ALIRAN VORTEX DENGAN TIPE SALURAN MASUK INVOLUTE

2020 ◽  
Vol 7 (2) ◽  
pp. 72-78
Author(s):  
Adnan Al Farisi ◽  
Yopi Handoyo ◽  
Taufiqur Rokhman
Keyword(s):  
Power Plant ◽  
Alternative Energy ◽  
Vortex Flow ◽  
Experimental Methods ◽  
Turbine Efficiency ◽  
A Value ◽  
Current Voltage ◽  
Materials Research ◽  
The One ◽  
Flow Vortex

The One of alternative energy that is environmentally friendly is by untilize water energy and turn it into a Microhydro power plant. Microhydro power plant usually made from utilize the waterfall with the head fell. While utilization for streams with a head small drop is not optimal yet. This is a reference to doing research on harnessing the flow of a river that has a value of head low between 0.7 m – 1.4 m with turning it into a Vortex flow (vortex). The purpose of this research is to know  the effect variation number of blade on power and efficiency in the vortex turbine. This research uses experimental methods to find current, voltage, torque and rpm using a reading instrument. The materials research vortex turbine used 6 blade, 8 blade and 10 blade with flat plate. The result showed the highest efficiency is 29,93 % with produce turbine power is 19,58 W, generated on turbine with variation 10 blade with load 3,315 kg and the capacity of water 10,14 l/s. Followed with an efficiency 24,17% and produce turbine power is 15,81 W, generated on turbine with the variation 8 blade with load 3,315 kg and the capacity of water is 10,14 l/s. The the lowest turbine efficiency 22,32% with produce tuebine power 14,60 W, generated on turbine with the variation 6 blade with load 3,315 kg, the capacity of water is 10,14 l/s.

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