Multiple correlation between auroral and magnetic pulsations: 2. Determination of electric currents and electric fields around a pulsating auroral patch

1984 ◽  
Vol 89 (A9) ◽  
pp. 7467-7481 ◽  
Author(s):  
Takasi Oguti ◽  
Kanji Hayashi
2001 ◽  
Author(s):  
Haim H. Bau

Abstract In this paper, I review some of our work on the use of magneto hydrodynamics (MHD) for pumping, controlling, and stirring fluids in microdevices. In many applications, one operates with liquids that are at least slightly conductive such as biological fluids. By patterning electrodes inside flow conduits and subjecting these electrodes to potential differences, one can induce electric currents in the liquid. In the presence of a magnetic field, a Lorentz force is generated in a direction that is perpendicular to both the magnetic and electric fields. Since one has a great amount of freedom in patterning the electrodes, one can induce forces in various directions so as to generate complex flows including “guided” flows in virtual, wall-less channels. The magnetic flux generators can be either embedded in the device or be external. Despite their unfavorable scaling (the magnitude of the forces is proportional to the fluid volume), MHD offers many advantages such as the flexibility of applying forces in any desired direction and the ability to adjust the magnitude of the forces by adjusting either the electric and/or magnetic fields. We provide examples of (i) MHD pumps; (ii) controlled networks of conduits in which each conduit is equipped with a MHD actuator and by controlling the voltage applied to each actuator, one can direct the liquid to flow in any desired way without a need for valves; and (iii) MHD stirrers including stirrers that exhibit chaotic advection.


1997 ◽  
Vol 488 ◽  
Author(s):  
S. Grossmann ◽  
T. Weyrauch ◽  
W. Haase

AbstractWe report on a method to investigate the inhomogeneous distribution of an electric dc field in multilayer polymer stacks. In situ electroabsorption (EA) measurements are applied in order to estimate the local electric fields in double layer polymer films. The observed time dependent behaviour is compared with a model equivalent circuit. The results indicate that besides the relation of ohmic resistivities and capacities of the different polymer layers in the investigated systems also the influence of the electric properties of polymer/electrode and polymer/polymer interfaces must be considered.


2016 ◽  
Vol 19 (3) ◽  
Author(s):  
IULIANA CARAMAN ◽  
IGOR EVTODIEV ◽  
OXANA RACOVEŢ ◽  
MARIUS STAMATE

<p><span lang="EN-US">This paper examines the prospects of using semiconductor layered A<span class="apple-converted-space"> </span><sup>III</sup><span class="apple-converted-space"> </span>B<span class="apple-converted-space"> </span><sup>VI</sup><span class="apple-converted-space"> type -</span> photovoltaic cells<span class="apple-converted-space"> </span>and the photoresis<span class="apple-converted-space">tors</span> as receptors<span class="apple-converted-space"> </span>for quantitative and qualitative measurements of carbon oxides. Carbon compounds in gaseous state form absorption bands of<span class="apple-converted-space"> </span>electromagnetic<span class="apple-converted-space"> </span>radiation in a wide range of spectrum (200 ÷ 100 000) cm<sup>-1</sup>.<span class="apple-converted-space"> </span>The light absorbed<span class="apple-converted-space"> </span>or emitted<span class="apple-converted-space"> </span>in these bands <span class="apple-converted-space">at the</span> excitations with ionizing radiation (X, γ) or strong electric fields contain direct information about the<span class="apple-converted-space"> </span>concentration of these molecules.  The frequencies that<span class="apple-converted-space"> </span>correspond to maxima of these bands are characteristic parameters of absorbing molecules. Fundamental absorption bands of CO, CO<span class="apple-converted-space"> </span><sub>2</sub> and NC have the edge of band at the border of ultraviolet-vacuum, while the emission bands <em>d</em> cover their full range of wave numbers from 45000 cm<sup>-1 </sup>to 10000 cm<sup>-1</sup>. Two types of radiation receptors from lamellar semiconductor type A<sup>III</sup>B<sup>VI</sup><span class="apple-converted-space"> </span>photosensitive in this spectral range are studied.</span></p>


2012 ◽  
Vol 26 (21) ◽  
pp. 1250136 ◽  
Author(s):  
SAJJAD DEHGHANI ◽  
MOHAMMAD KAZEM MORAVVEJ-FARSHI ◽  
MOHAMMAD HOSSEIN SHEIKHI

We present a model to understand the effect of temperature on the electrical resistance of individual semiconducting single wall carbon nanotubes (s-SWCNTs) of various diameters under various electric fields. The temperature dependence of the resistance of s-SWCNTs and metallic SWCNTs (m-SWCNTs) are compared. These results help us to understand the temperature dependence of the resistance of SWCNTs network. We experimentally examine the temperature dependence of the resistance of random networks of SWCNTs, prepared by dispersing CNTs in ethanol and drop-casting the solution on prefabricated metallic electrodes. Examining various samples with different electrode materials and spacings, we find that the dominant resistance in determination of the temperature dependence of resistance of the network is the resistance of individual tubes, rather than the tube–tube resistance or tube–metal contact resistance. It is also found that the tube–tube resistance depends on the electrode spacing and it is more important for larger electrode spacings. By applying high electric field to burn the all-metallic paths of the SWCNTs network, the temperature dependence of the resistance of s-SWCNTs is also examined. We also investigate the effect of acid treatment of CNTs on the temperature dependence of the resistance of SWCNTs and also multi-wall CNTs (MWCNTs) networks.


2001 ◽  
Vol 664 ◽  
Author(s):  
Brent P. Nelsona ◽  
Yueqin Xu ◽  
Robert C. Reedy ◽  
Richard S. Crandall ◽  
A. Harv Mahan ◽  
...  

ABSTRACTWe find that hydrogen diffuses as H+, H0, or H- in hydrogenated amorphous silicon depending on its location within the i-layer of a p-i-n device. We annealed a set of five p-i-n devices, each with a thin deuterium-doped layer at a different location in the i-layer, and observed the D-diffusion using secondary ionmass spectrometry (SIMS). When H-diffuses in a charged state, electric fields in the device strongly influence the direction and distance of diffusion. When D is incorporated into a device near the p-layer, almost all of the D-diffusion occurs as D+, and when the D is incorporated near the n-layer, most of the D-diffusion occurs as D-. We correlate the preferential direction of D-motion at given depth within the i-layer, with the local Fermi level (as calculated by solar cell simulations), to empirically determine an effective correlation energy for mobile-H electronic transitions of 0.39 ± 0.1 eV. Using this procedure, the best fit to the data produces a disorder broadening of the transition levels of ∼0.25 eV. The midpoint between the H0/+ and the H0/- transition levels is ∼0.20 ± 0.05 eV above midgap.


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