scholarly journals Grafting nanometer metal/oxide interface towards enhanced low-temperature acetylene semi-hydrogenation

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shihui Zou ◽  
Baohui Lou ◽  
Kunran Yang ◽  
Wentao Yuan ◽  
Chongzhi Zhu ◽  
...  

AbstractMetal/oxide interface is of fundamental significance to heterogeneous catalysis because the seemingly “inert” oxide support can modulate the morphology, atomic and electronic structures of the metal catalyst through the interface. The interfacial effects are well studied over a bulk oxide support but remain elusive for nanometer-sized systems like clusters, arising from the challenges associated with chemical synthesis and structural elucidation of such hybrid clusters. We hereby demonstrate the essential catalytic roles of a nanometer metal/oxide interface constructed by a hybrid Pd/Bi2O3 cluster ensemble, which is fabricated by a facile stepwise photochemical method. The Pd/Bi2O3 cluster, of which the hybrid structure is elucidated by combined electron microscopy and microanalysis, features a small Pd-Pd coordination number and more importantly a Pd-Bi spatial correlation ascribed to the heterografting between Pd and Bi terminated Bi2O3 clusters. The intra-cluster electron transfer towards Pd across the as-formed nanometer metal/oxide interface significantly weakens the ethylene adsorption without compromising the hydrogen activation. As a result, a 91% selectivity of ethylene and 90% conversion of acetylene can be achieved in a front-end hydrogenation process with a temperature as low as 44 °C.

2003 ◽  
Vol 547 (1-2) ◽  
pp. L859-L864 ◽  
Author(s):  
R Lindsay ◽  
E Michelangeli ◽  
B.G Daniels ◽  
M Polcik ◽  
A Verdini ◽  
...  

2012 ◽  
Vol 59 ◽  
pp. 148-156 ◽  
Author(s):  
Jérôme Issartel ◽  
Sébastien Martoia ◽  
Frédéric Charlot ◽  
Valérie Parry ◽  
Guillaume Parry ◽  
...  

2000 ◽  
Vol 07 (01n02) ◽  
pp. 135-139 ◽  
Author(s):  
V. P. ZHDANOV ◽  
P. R. NORTON

A seminal model describing the kinetics of growth of thin oxide films on metal crystals was proposed by Cabrera and Mott (CM). The model is based on the assumption that the growth is limited by the field-facilitated activated jumps of metal ions located in steps on the metal–oxide interface. We generalize the CM model by (i) exploring the interplay of jumps of metal ions from the step and terrace sites at the metal–oxide interface, and (ii) scrutinizing the processes at the oxide–gas-phase interface. The former factor is found to change the physical meaning of the parameters in the CM growth law. The latter factor results in modification of the growth law. In particular, the oxidation kinetics becomes dependent on the O2 pressure. More specifically, the oxidation rate is predicted to increase with increasing pressure. This effect is, however, rather weak and becomes progressively weaker with increasing oxide film thickness.


2019 ◽  
Vol 742 ◽  
pp. 842-850 ◽  
Author(s):  
Aaron W. Colldeweih ◽  
Adrienn Baris ◽  
Philippe Spätig ◽  
Sousan Abolhassani

Author(s):  
Yoyo Hinuma ◽  
Shinya Mine ◽  
Takashi Toyao ◽  
Zen Maeno ◽  
Ken-ichi Shimizu

Metal/oxide support perimeter sites are known to provide unique properties because the nearby metal changes the local environment on the support surface. In particular, the electron scavenger effect reduces the...


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