scholarly journals Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz

2021 ◽  
Author(s):  
S. Lischke ◽  
A. Peczek ◽  
J. S. Morgan ◽  
K. Sun ◽  
D. Steckler ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
State Of The Art ◽  
Photonic Integrated Circuits ◽  
Bandwidth Efficiency ◽  
Novel Device ◽  
Silicon Devices ◽  
Performance Specifications ◽  
Dark Currents

AbstractOn a scalable silicon technology platform, we demonstrate photodetectors matching or even surpassing state-of-the-art III–V devices. As key components in high-speed optoelectronics, photodetectors with bandwidths greater than 100 GHz have been a topic of intense research for several decades. Solely InP-based detectors could satisfy the highest performance specifications. Devices based on other materials, such as germanium-on-silicon devices, used to lag behind in speed, but enabled complex photonic integrated circuits and co-integration with silicon electronics. Here we demonstrate waveguide-coupled germanium photodiodes with optoelectrical 3-dB bandwidths of 265 GHz and 240 GHz at a photocurrent of 1 mA. This outstanding performance is achieved by a novel device concept in which a germanium fin is sandwiched between complementary in situ-doped silicon layers. Our photodetectors show internal responsivities of 0.3 A W−1 (265 GHz) and 0.45 A W−1 (240 GHz) at a wavelength of 1,550 nm. The internal bandwidth–efficiency product of the latter device is 86 GHz. Low dark currents of 100–200 nA are obtained from these ultra-fast photodetectors.

scholarly journals High-speed photodiodes for InP-based photonic integrated circuits

2012 ◽  
Vol 20 (8) ◽  
pp. 9172 ◽  
Author(s):  
E. Rouvalis ◽  
M. Chtioui ◽  
M. Tran ◽  
F. Lelarge ◽  
F. van Dijk ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Photonic Integrated Circuits

Test and Diagnosis of Automotive Embedded Processors via High-Speed Standard Interfaces

2017 ◽  
Vol 26 (08) ◽  
pp. 1740006
Author(s):  
Christian Gleichner ◽  
Heinrich T. Vierhaus
Keyword(s):  
Integrated Circuits ◽  
Embedded System ◽  
System Reliability ◽  
High Speed ◽  
State Of The Art ◽  
Fault Analysis ◽  
Production Test ◽  
System Failure ◽  
Functional Tests ◽  
The Embedded System

In state-of-the-art automotive controllers, functional tests are used to check their integrity in the field. Features dedicated to production test of integrated circuits such as scan chains are not applied in the embedded system. However, such test structures enable a more effective and diagnostic test, which improves the fault analysis in case of a system failure and even increases system reliability. To achieve this, an access to the integrated test logic is required. This paper describes a concept of a test access to embedded systems via high-speed standard interfaces. The extended test logic as well as an appropriate test routine is presented.

scholarly journals Recent Progress in Silicon Photonics: A Review

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-27 ◽  
Author(s):  
Zhou Fang ◽  
Ce Zhou Zhao
Keyword(s):  
Integrated Circuits ◽  
Silicon Photonics ◽  
Recent Progress ◽  
State Of The Art ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
High Data ◽  
Bandwidth Requirement ◽  
Rate Transmission ◽  
Data Rate Transmission

With the increasing bandwidth requirement in computing and signal processing, the inherent limitations in metallic interconnection are seriously threatening the future of traditional IC industry. Silicon photonics can provide a low-cost approach to overcome the bottleneck of the high data rate transmission by replacing the original electronic integrated circuits with photonic integrated circuits. Although the commercial promise has not been realized, this perspective gives huge impetus to the development of silicon photonics these years. This paper provides an overview of the progress and the state of the art of each component in silicon photonics, including waveguides, filters, modulators, detectors, and lasers, mainly in the last five years.

scholarly journals Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits

2015 ◽  
Vol 16 (1) ◽  
pp. 221-229
Author(s):  
S.P. Novosyadlyy ◽  
A.M. Bosats'kyy
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Effective Rate ◽  
Bipolar Transistors ◽  
Hot Electron ◽  
Silicon Devices ◽  
Heterostructure Field Effect Transistors ◽  
Gap Technology

Reducing the size of silicon devices is accompanied by an increase in the effective rate of electrons,  decrease transit time and the transition to a ballistic work.Power consumption is reduced too. Formation of large integrated circuits structures onSi-homotransition reduces their frequency range and performance.Nowadaysproposed several new types of devices and technologies forming of large integrated circuits structures that based on high speeds and mobility of electrons in GaAs, and  small size structures.These include, for example, the heterostructure field-effect transistors on a segmented doping, bipolar transistors with wide-emitter, transistor with soulful base, vertical ballistic transistors, devices with flat-doped barriers and hot electron transistors as element base of modern high-speed large integrated circuits.In this article we consider graded-gap technology formatting as bipolar and field-effect transistors, which are the basis of modern high-speedof large integrated circuits structures.

scholarly journals High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

2021 ◽  
Author(s):  
Mark Dong ◽  
Genevieve Clark ◽  
Andrew J. Leenheer ◽  
Matthew Zimmermann ◽  
Daniel Dominguez ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Power Consumption ◽  
High Speed ◽  
Large Scale ◽  
Near Infrared ◽  
Response Times ◽  
Photonic Integrated Circuits ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Shifters ◽  
Oxide Semiconductor

AbstractRecent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

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