scholarly journals Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Changfu Li ◽  
Jianfei Li ◽  
Mingsheng Xu ◽  
Ziwu Ji ◽  
Kaiju Shi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Light Emitting Diode ◽  
Structural Defects ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Peak Energy ◽  
Wide Range ◽  
Higher Temperature ◽  
Injection Currents

AbstractThis study aimed to investigate temperature dependencies at different injection currents (ICs) of the electroluminescence (EL) spectra from a green InGaN/GaN light-emitting diode (LED) based on multiple quantum wells (MQWs) grown on a Si substrate in a wide range of ICs (0.001–350 mA) and temperatures (6–350 K). The results show that the temperature-changing characteristic of the EL peak energy gradually evolves from an approximately V-shaped temperature dependence into a wave-shaped (three-step blueshift) dependence with increasing IC. Finally, it emerges as an approximately inverted V-shaped temperature dependence. The behavior reflects the fact that the emission related to InGaN is significantly influenced by the changing recombination dynamics of carriers with rising temperature or IC. This is attributed to the presence in the MQW active region of a stronger carrier localization effect across three zones with different average In contents. Moreover, with the decline of the temperature at lower ICs, the temperature behavior of the external quantum efficiency (EQE) value is dominated by the deactivated non-radiative centers. This phenomenon occurs not only in the higher temperature range but also at lower temperatures due to more In-content-induced structural defects, which are confirmed by measurements of the integrated EL intensity as well as the EQE dependence on IC.

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Multi-Wavelength Emitting InGaN/GaN Quantum Well Grown on V-Shaped GaN(1101) Microfacet

2007 ◽  
Vol 7 (11) ◽  
pp. 4053-4056 ◽  
Author(s):  
Eun-Sil Kang ◽  
Jin-Woo Ju ◽  
Jin Soo Kim ◽  
Haeng-Keun Ahn ◽  
June Key Lee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Multiple Quantum ◽  
Continuous Change ◽  
Light Emitting ◽  
Transmission Electron ◽  
Luminescence Peak ◽  
Multi Wavelength ◽  
Upward Direction ◽  
Conventional Photolithography

InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along 〈1120〉 direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the non-uniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.

First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode onm-Plane Sapphire with AlGaN Multiple Quantum Wells

2010 ◽  
Vol 49 (4) ◽  
pp. 040206 ◽  
Author(s):  
Krishnan Balakrishnan ◽  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Mohamed Lachab ◽  
Bin Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Deep Ultraviolet

Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
A.E. Yunovich ◽  
V.E. Kudryashov ◽  
A..N. Turkin ◽  
A.N. Kovalev ◽  
F.I. Manyakhin
Keyword(s):  
Quantum Wells ◽  
Large Scale ◽  
Light Emitting Diodes ◽  
Spectral Band ◽  
High Energy ◽  
Model Fit ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Wide Range ◽  
Tunnel Effects

AbstractElectroluminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with single and multiple quantum wells (QWs) are analyzed by models of radiative recombination in 2D-structures with band tails. Equations of the model fit spectra quite good in a wide range of currents. Parameters of the fit are discussed and compared for single and multiple QWs. Tunnel effects play a sufficient role in blue LEDs with single QWs at low currents; they can be neglected in LEDs with multiple QWs. A new spectral band was detected at the high energy side of the spectra of green LEDs with multiple QWs; it is attributed with large scale inhomogenities of In distribution in InGaN QWs.)

P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2489-2492 ◽  
Author(s):  
Chih-Hsin Ko ◽  
Yan-Kuin Su ◽  
Shoou-Jinn Chang ◽  
Ta-Ming Kuan ◽  
Chung-I Chiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Organic Vapor ◽  
Metal Organic

Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

2008 ◽  
Vol 92 (9) ◽  
pp. 091110 ◽  
Author(s):  
Il-Kyu Park ◽  
Ja-Yeon Kim ◽  
Min-Ki Kwon ◽  
Chu-Young Cho ◽  
Jae-Hong Lim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
White Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting
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