scholarly journals NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Muhammad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
Asif Ali ◽  
Cong Dinh Nguyen ◽  
Sikandar Aftab ◽  
...  
Keyword(s):  
Sharp Interface ◽  
Heterojunction Diode ◽  
Current Ratio ◽  
Strong Light ◽  
Fast Rise Time ◽  
Matter Interaction ◽  
Light Matter Interaction ◽  
Self Powered ◽  
Photovoltaic Characteristics ◽  
Fast Rise

AbstractTwo-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 104 was obtained at Vg = − 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW−1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 109 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W−1, and the noise equivalent power (NEP) of 1.22 × 10–13 WHz−1/2. The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.

scholarly journals High broadband photoconductivity of few-layered MoS2 field-effect transistors measured using multi-terminal methods: effects of contact resistance

Nanoscale ◽  
2020 ◽  
Vol 12 (45) ◽  
pp. 22904-22916
Author(s):  
Priyanka Das ◽  
Jawnaye Nash ◽  
Micah Webb ◽  
Raelyn Burns ◽  
Varun N. Mapara ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect Transistors ◽  
Current Ratio ◽  
Strong Light ◽  
Tunable Bandgap ◽  
2D Semiconductors ◽  
Matter Interaction ◽  
Excellent Candidate ◽  
Light Matter Interaction ◽  
Layered Mos2

Among layered 2D semiconductors, MoS2 is an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap, high ON/OFF current ratio in FETs and strong light–matter interaction.

scholarly journals Optical switching of topological phase in a perovskite polariton lattice

2021 ◽  
Vol 7 (21) ◽  
pp. eabf8049
Author(s):  
Rui Su ◽  
Sanjib Ghosh ◽  
Timothy C. H. Liew ◽  
Qihua Xiong
Keyword(s):  
Optical Switching ◽  
Room Temperature ◽  
Optical Pumping ◽  
Optical Nonlinearity ◽  
Edge States ◽  
Ambient Conditions ◽  
Strong Light ◽  
Exciton Polaritons ◽  
Matter Interaction ◽  
Light Matter Interaction

Strong light-matter interaction enriches topological photonics by dressing light with matter, which provides the possibility to realize active nonlinear topological devices with immunity to defects. Topological exciton polaritons—half-light, half-matter quasiparticles with giant optical nonlinearity—represent a unique platform for active topological photonics. Previous demonstrations of exciton polariton topological insulators demand cryogenic temperatures, and their topological properties are usually fixed. Here, we experimentally demonstrate a room temperature exciton polariton topological insulator in a perovskite zigzag lattice. Polarization serves as a degree of freedom to switch between distinct topological phases, and the topologically nontrivial polariton edge states persist in the presence of onsite energy perturbations, showing strong immunity to disorder. We further demonstrate exciton polariton condensation into the topological edge states under optical pumping. These results provide an ideal platform for realizing active topological polaritonic devices working at ambient conditions, which can find important applications in topological lasers, optical modulation, and switching.

scholarly journals Terahertz quantum plasmonics at nanoscales and angstrom scales

Nanophotonics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 435-451 ◽  
Author(s):  
Taehee Kang ◽  
Young-Mi Bahk ◽  
Dai-Sik Kim
Keyword(s):  
Electron Tunneling ◽  
Strong Field ◽  
Field Enhancement ◽  
Dipole Antenna ◽  
Strong Light ◽  
Metallic Structures ◽  
Terahertz Pulses ◽  
Matter Interaction ◽  
Light Matter Interaction ◽  
Quantum Phenomena

AbstractThrough the manipulation of metallic structures, light–matter interaction can enter into the realm of quantum mechanics. For example, intense terahertz pulses illuminating a metallic nanotip can promote terahertz field–driven electron tunneling to generate enormous electron emission currents in a subpicosecond time scale. By decreasing the dimension of the metallic structures down to the nanoscale and angstrom scale, one can obtain a strong field enhancement of the incoming terahertz field to achieve atomic field strength of the order of V/nm, driving electrons in the metal into tunneling regime by overcoming the potential barrier. Therefore, designing and optimizing the metal structure for high field enhancement are an essential step for studying the quantum phenomena with terahertz light. In this review, we present several types of metallic structures that can enhance the coupling of incoming terahertz pulses with the metals, leading to a strong modification of the potential barriers by the terahertz electric fields. Extreme nonlinear responses are expected, providing opportunities for the terahertz light for the strong light–matter interaction. Starting from a brief review about the terahertz field enhancement on the metallic structures, a few examples including metallic tips, dipole antenna, and metal nanogaps are introduced for boosting the quantum phenomena. The emerging techniques to control the electron tunneling driven by the terahertz pulse have a direct impact on the ultrafast science and on the realization of next-generation quantum devices.

scholarly journals Monolithic metallic nanocavities for strong light-matter interaction to quantum-well intersubband excitations

2013 ◽  
Vol 21 (26) ◽  
pp. 32572 ◽  
Author(s):  
A. Benz ◽  
S. Campione ◽  
S. Liu ◽  
I. Montano ◽  
J. F. Klem ◽  
...  
Keyword(s):  
Quantum Well ◽  
Strong Light ◽  
Matter Interaction ◽  
Light Matter Interaction

scholarly journals Coupling single emitters to quantum plasmonic circuits

Nanophotonics ◽  
2016 ◽  
Vol 5 (3) ◽  
pp. 483-495 ◽  
Author(s):  
Alexander Huck ◽  
Ulrik L. Andersen
Keyword(s):  
Quantum Information ◽  
Recent Progress ◽  
Quantum Information Processing ◽  
Single Photon ◽  
Strong Light ◽  
Fundamental Physics ◽  
Single Photon Emitters ◽  
Quantum Sensing ◽  
Matter Interaction ◽  
Light Matter Interaction

AbstractIn recent years, the controlled coupling of single-photon emitters to propagating surface plasmons has been intensely studied, which is fueled by the prospect of a giant photonic nonlinearity on a nanoscaled platform. In this article, we will review the recent progress on coupling single emitters to nanowires towards the construction of a new platform for strong light-matter interaction. The control over such a platform might open new doors for quantum information processing and quantum sensing at the nanoscale and for the study of fundamental physics in the ultrastrong coupling regime.

Room-Temperature Strong Light–Matter Interaction with Active Control in Single Plasmonic Nanorod Coupled with Two-Dimensional Atomic Crystals

Nano Letters ◽  
2017 ◽  
Vol 17 (8) ◽  
pp. 4689-4697 ◽  
Author(s):  
Jinxiu Wen ◽  
Hao Wang ◽  
Weiliang Wang ◽  
Zexiang Deng ◽  
Chao Zhuang ◽  
...  
Keyword(s):  
Active Control ◽  
Room Temperature ◽  
Two Dimensional ◽  
Strong Light ◽  
Matter Interaction ◽  
Light Matter Interaction

scholarly journals Sensing Enhancement of Electromagnetically Induced Transparency Effect in Terahertz Metamaterial by Substrate Etching

2021 ◽  
Vol 9 ◽  
Author(s):  
Tingling Lin ◽  
Yi Huang ◽  
Shuncong Zhong ◽  
Manting Luo ◽  
Yujie Zhong ◽  
...  
Keyword(s):  
Electric Field ◽  
Electromagnetically Induced Transparency ◽  
High Sensitivity ◽  
Strong Light ◽  
Refractive Index Sensing ◽  
Quadrupole Resonance ◽  
Matter Interaction ◽  
Potential Applications ◽  
Light Matter Interaction ◽  
Induced Transparency

A broad range of terahertz (THz) metamaterials have been developed for refractive index sensing. However, most of these metamaterials barely make sufficient use of the excited electric field which is crucial to achieve high sensitivity. Here, we proposed a metamaterial sensor possessing electromagnetically induced transparency (EIT) resonance that is formed by the interference of dipole and quadrupole resonance. In particular, the strengthening of light-matter interaction is realized through substrate etching, leading to a remarkable improvement in sensitivity. Hence, three kinds of etching mode were presented to maximize the utilization of the electric field, and the corresponding highest sensitivity is enhanced by up to ~2.2-fold, from 0.260 to 0.826 THz/RIU. The proposed idea to etch substrate with a strong light-matter interaction can be extended to other metamaterial sensors and possesses potential applications in integrating metamaterial and microfluid for biosensing.

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