scholarly journals High Jc and low anisotropy of hydrogen doped NdFeAsO superconducting thin film

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Kazumasa Iida ◽  
Jens Hänisch ◽  
Keisuke Kondo ◽  
Mingyu Chen ◽  
Takafumi Hatano ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Transport ◽  
Epitaxial Thin Films ◽  
Superconducting Transition ◽  
Electrical Transport Properties ◽  
Superconducting Thin Film ◽  
Ginzburg Landau ◽  
Microscopy Investigation ◽  
Scaling Parameters ◽  
Hydrogen Substitution

AbstractThe recent realisations of hydrogen doped LnFeAsO (Ln = Nd and Sm) superconducting epitaxial thin films call for further investigation of their structural and electrical transport properties. Here, we report on the microstructure of a NdFeAs(O,H) epitaxial thin film and its temperature, field, and orientation dependencies of the resistivity and the critical current density Jc. The superconducting transition temperature Tc is comparable to NdFeAs(O,F). Transmission electron microscopy investigation supported that hydrogen is homogenously substituted for oxygen. A high self-field Jc of over 10 MA/cm2 was recorded at 5 K, which is likely to be caused by a short London penetration depth. The anisotropic Ginzburg–Landau scaling for the angle dependence of Jc yielded temperature-dependent scaling parameters γJ that decreased from 1.6 at 30 K to 1.3 at 5 K. This is opposite to the behaviour of NdFeAs(O,F). Additionally, γJ of NdFeAs(O,H) is smaller than that of NdFeAs(O,F). Our results indicate that heavily electron doping by means of hydrogen substitution for oxygen in LnFeAsO is highly beneficial for achieving high Jc with low anisotropy without compromising Tc, which is favourable for high-field magnet applications.

Study of structural and electrical transport properties of CaRuO3 bulk and thin film

2020 ◽  
Author(s):  
Roshan Kumar Patel ◽  
Shobha Gondh ◽  
Harish Kumar ◽  
Shuchi Shyam Chitrakar ◽  
A. K. Pramanik
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties

Electrical transport properties in nitrogen-doped p-type ZnO thin film

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Zno Thin Film ◽  
Electrical Transport Properties ◽  
Nitrogen Doped ◽  
P Type

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

scholarly journals Potassium-Doped Para-Terphenyl: Structure, Electrical Transport Properties and Possible Signatures of a Superconducting Transition

2020 ◽  
Vol 5 (4) ◽  
pp. 78
Author(s):  
Nicola Pinto ◽  
Corrado Di Nicola ◽  
Angela Trapananti ◽  
Marco Minicucci ◽  
Andrea Di Cicco ◽  
...  
Keyword(s):  
Magnetic Susceptibility ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Chemical Method ◽  
Preliminary Evidence ◽  
Superconducting Gap ◽  
Superconducting Transition ◽  
Electrical Transport Properties ◽  
High Tc ◽  
Resistivity Measurements

Preliminary evidence for the occurrence of high-TC superconductivity in alkali-doped organic materials, such as potassium-doped p-terphenyl (KPT), were recently obtained by magnetic susceptibility measurements and by the opening of a large superconducting gap as measured by ARPES and STM techniques. In this work, KPT samples have been synthesized by a chemical method and characterized by low-temperature Raman scattering and resistivity measurements. Here, we report the occurrence of a resistivity drop of more than 4 orders of magnitude at low temperatures in KPT samples in the form of compressed powder. This fact was interpreted as a possible sign of a broad superconducting transition taking place below 90 K in granular KPT. The granular nature of the KPT system appears to be also related to the 20 K broadening of the resistivity drop around the critical temperature.

scholarly journals Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 254 ◽  
Author(s):  
Changmin Lee ◽  
Won-Yong Lee ◽  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Electrical Transport ◽  
Thin Film Transistors ◽  
Vacancy Concentration ◽  
Operation Mode ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Oxygen Vacancy Concentration ◽  
Electrical Transport Properties

Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive Vth shift.

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