scholarly journals High thermal durability of Ru-based synthetic antiferromagnet by interfacial engineering with Re insertion

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chun-Liang Yang ◽  
Chih-Huang Lai
Keyword(s):  
Coupling Strength ◽  
Degrees Of Freedom ◽  
Defect Formation ◽  
Interlayer Coupling ◽  
Stacking Fault ◽  
Cmos Process ◽  
Interfacial Engineering ◽  
Synthetic Antiferromagnet ◽  
Line Process ◽  
Process Compatibility

AbstractSynthetic antiferromagnets (SAFs), composed of Ru spacer with a Re insertion layer, reveal superior thermal stability up to 450 °C annealing, making the back-end of line process a wider manufacturing window and tolerance to integrate the perpendicular magnetic tunneling junctions (P-MTJs) into CMOS process. The coupling strength decays significantly for SAFs with single Ru spacer after annealing above 400 °C. Due to the characteristics of refractory metals, Re can behave as a diffusion barrier during annealing. Furthermore, the Re spacer can still keep reasonable RKKY coupling strength. Therefore, the SAFs with Ru/Re composite spacers exhibit higher RKKY coupling strength than Ru spacers after 450 °C annealing. In addition, we discovered the different enhancements for the upper and lower interfacial Re insertion, which was attributed to the varied defect formation at interfaces. The stacking fault was formed at the upper Ru/Co interface in as-deposited state. When Re was inserted at the upper interface, the diffusion between Co and Ru was significantly suppressed and the stacking fault can be eliminated during annealing, leading to enhanced interlayer coupling. Through the interfacial engineering, we may have more degrees of freedom to tune the SAF performance and thus enhance process compatibility of P-MTJ to the CMOS process.

scholarly journals Nonlinear analogue of the May−Wigner instability transition

2016 ◽  
Vol 113 (25) ◽  
pp. 6827-6832 ◽  
Author(s):  
Yan V. Fyodorov ◽  
Boris A. Khoruzhenko
Keyword(s):  
Stability Analysis ◽  
Vector Field ◽  
Linear Stability Analysis ◽  
Coupling Strength ◽  
Degrees Of Freedom ◽  
Gaussian Vector ◽  
Abrupt Transition ◽  
Global View ◽  
Number Of Equilibria ◽  
Nonlinear Analogue

We study a system of N≫1 degrees of freedom coupled via a smooth homogeneous Gaussian vector field with both gradient and divergence-free components. In the absence of coupling, the system is exponentially relaxing to an equilibrium with rate μ. We show that, while increasing the ratio of the coupling strength to the relaxation rate, the system experiences an abrupt transition from a topologically trivial phase portrait with a single equilibrium into a topologically nontrivial regime characterized by an exponential number of equilibria, the vast majority of which are expected to be unstable. It is suggested that this picture provides a global view on the nature of the May−Wigner instability transition originally discovered by local linear stability analysis.

Molecular Dynamics Simulations to Evaluate the Effect of the Difference in Material Properties on Irradiation-Induced Defect Formation Under Applied Strain

2012 ◽  
Author(s):  
Toshihiro Horinouchi ◽  
Satoshi Miyashiro ◽  
Mitsuhiro Itakura ◽  
Taira Okita
Keyword(s):  
Molecular Dynamics ◽  
Defect Formation ◽  
Stacking Fault ◽  
Applied Strain ◽  
Stacking Fault Energy ◽  
Cascade Process ◽  
Defect Production ◽  
Fcc Metals ◽  
The Difference ◽  
Dynamics Simulations

The influence of applied strain on the defect production rate during a cascade process was evaluated for several FCC metals with different Stacking Fault Energy by the method of molecular dynamics. It was found that applied strain increases the number of surviving defects, which is caused by the enhanced formation of larger clusters. It was also found that the number of defects is almost independent of Stacking Fault Energy even under applied strain.

scholarly journals Evolution of high-frequency Raman modes and their doping dependence in twisted bilayer MoS2

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17272-17280 ◽  
Author(s):  
Rahul Debnath ◽  
Indrajit Maity ◽  
Rabindra Biswas ◽  
Varun Raghunathan ◽  
Manish Jain ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Coupling Strength ◽  
First Principles ◽  
High Frequency ◽  
Twist Angle ◽  
Interlayer Coupling ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Raman Modes ◽  
Systematic Evolution

Here, we demonstrate the systematic evolution of the interlayer coupling and electron-phonon coupling strength with twist angle in bilayer MoS2 using a combination of Raman spectroscopy and a combination of classical and first-principles based simulations.

Gold nanowire growth through stacking fault mechanism by oleylamine-mediated synthesis

Nanoscale ◽  
2020 ◽  
Vol 12 (25) ◽  
pp. 13316-13329 ◽  
Author(s):  
Daniel A. Moraes ◽  
João B. Souza Junior ◽  
Fabio F. Ferreira ◽  
Naga Vishnu V. Mogili ◽  
Laudemir C. Varanda
Keyword(s):  
Growth Mechanism ◽  
Defect Formation ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Nanowire Growth ◽  
Gold Nanowires ◽  
Gold Nanowire ◽  
Fault Mechanism ◽  
Stable Stacking Faults

We assigned the growth mechanism of anisotropic tadpole-like gold nanowires to the stable stacking faults and twinned defect formation, with Au-monomer incorporation onto the faulted-faces, resulting in a tail with a mixture of fcc/hcp phases.

Chaotic burst synchronization in a two-small-world-layer neuronal network

2015 ◽  
Vol 26 (05) ◽  
pp. 1550051 ◽  
Author(s):  
Yanhong Zheng ◽  
Haixia Wang
Keyword(s):  
Neuronal Network ◽  
Coupling Strength ◽  
Small World ◽  
Interlayer Coupling ◽  
The Other ◽  
Spatiotemporal Pattern ◽  
Small Noise ◽  
Irregular Pattern ◽  
Burst Synchronization ◽  
Chaotic Burst

Chaotic burst synchronization in a two-small-world-layer neuronal network is studied in this paper. For a neuronal network coupled by two single-small-world-layer networks with link probability differences between layers, the two-layer network can achieve synchrony as the interlayer coupling strength increases. When chaotic layer network is coupled with chaotic-burst-synchronization layer network, the latter is dominant at small interlayer coupling strength, so it can make the layer with the irregular pattern show some regular and also exhibit the same pattern with the other layer. However, when chaotic layer is coupled with firing synchronization layer, the ordered layer is dominated by a disordered one with the interlayer coupling strength increasing. When the interlayer coupling strength is large enough, both networks are chaotic burst synchronization. Therefore, the synchronous states strongly depend on the interlayer coupling strength and the link probability. Moreover, the spatiotemporal pattern synchronization between the networks is robust to small noise.

Effects of perpendicular interlayer coupling strength on canting angles of TbCo-sublattice magnetization

2009 ◽  
Vol 79 (14) ◽  
Author(s):  
Meng-Shian Lin ◽  
Hao-Cheng Hou ◽  
Yun-Chung Wu ◽  
Po-Hsiang Huang ◽  
Chih-Huang Lai ◽  
...  
Keyword(s):  
Coupling Strength ◽  
Interlayer Coupling ◽  
Sublattice Magnetization

ENTANGLEMENT DYNAMICS OF THREE-QUBIT STATES UNDER A SPIN ENVIRONMENT

2011 ◽  
Vol 09 (02) ◽  
pp. 791-800 ◽  
Author(s):  
XIAO SAN MA ◽  
GAO SHENG LIU ◽  
AN MIN WANG
Keyword(s):  
Coupling Strength ◽  
Degrees Of Freedom ◽  
Ghz State ◽  
W State ◽  
Matrix Elements ◽  
Entanglement Dynamics ◽  
Werner State ◽  
Qubit States ◽  
Decoherence Free Subspaces

In this paper, we investigate the entanglement dynamics of three-qubit states under a spin environment. From the analysis, we find that the entanglement dynamics of the three-qubit states depends not only on the coupling strength between the system and the environment and the number of degrees of freedom of the environment but also on the tunneling matrix elements of the spin environment and the specific state of concern. Specifically, the entanglement dynamics of the GHZ state, the W state, and the Werner state have been analyzed in detail and the conditions to identify the decoherence-free subspaces of our model have been discussed.

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