Gold nanowire growth through stacking fault mechanism by oleylamine-mediated synthesis

Nanoscale ◽  
2020 ◽  
Vol 12 (25) ◽  
pp. 13316-13329 ◽  
Author(s):  
Daniel A. Moraes ◽  
João B. Souza Junior ◽  
Fabio F. Ferreira ◽  
Naga Vishnu V. Mogili ◽  
Laudemir C. Varanda
Keyword(s):  
Growth Mechanism ◽  
Defect Formation ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Nanowire Growth ◽  
Gold Nanowires ◽  
Gold Nanowire ◽  
Fault Mechanism ◽  
Stable Stacking Faults

We assigned the growth mechanism of anisotropic tadpole-like gold nanowires to the stable stacking faults and twinned defect formation, with Au-monomer incorporation onto the faulted-faces, resulting in a tail with a mixture of fcc/hcp phases.

Stacking Fault Energies in TiCx

1996 ◽  
Vol 458 ◽  
Author(s):  
R. M. Harris ◽  
P. D. Bristowe
Keyword(s):  
Tight Binding ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Tight Binding Model ◽  
Binding Model ◽  
Preliminary Results ◽  
Surface Energies ◽  
Dislocation Dissociation ◽  
Stable Stacking Faults ◽  
Stacking Fault Energies

ABSTRACTWe have used a Tight Binding model to calculate the surface energies of various (111) stacking faults in TiC1.0 and TiC0.5. Based upon our preliminary results we have identified the stable stacking faults and have examined possible dislocation dissociation reactions.

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping

2012 ◽  
Vol 717-720 ◽  
pp. 415-418
Author(s):  
Yoshitaka Umeno ◽  
Kuniaki Yagi ◽  
Hiroyuki Nagasawa
Keyword(s):  
Mechanical Properties ◽  
Ab Initio ◽  
Density Functional ◽  
Stacking Faults ◽  
Single Layer ◽  
Local Strain ◽  
Density Functional Theory Calculations ◽  
Stacking Fault ◽  
Functional Theory ◽  
N Doping

We carry out ab initio density functional theory calculations to investigate the fundamental mechanical properties of stacking faults in 3C-SiC, including the effect of stress and doping atoms (substitution of C by N or Si). Stress induced by stacking fault (SF) formation is quantitatively evaluated. Extrinsic SFs containing double and triple SiC layers are found to be slightly more stable than the single-layer extrinsic SF, supporting experimental observation. Effect of tensile or compressive stress on SF energies is found to be marginal. Neglecting the effect of local strain induced by doping, N doping around an SF obviously increase the SF formation energy, while SFs seem to be easily formed in Si-rich SiC.

Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations

CrystEngComm ◽  
2021 ◽  
Author(s):  
Andrey Sarikov ◽  
Anna Marzegalli ◽  
Luca Barbisan ◽  
Massimo Zimbone ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Stacking Faults ◽  
Md Simulations ◽  
Stacking Fault ◽  
Dynamics Simulations

In this work, annihilation mechanism of stacking faults (SFs) in epitaxial 3C-SiC layers grown on Si(001) substrates is studied by molecular dynamics (MD) simulations. The evolution of SFs located in...

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

ON THE ROLE OF STACKING FAULTS IN SOME PROBLEMS OF GLIDE AND TWINNING IN CUBIC METALS

1967 ◽  
Vol 45 (2) ◽  
pp. 481-492 ◽  
Author(s):  
B. Escaig ◽  
G. Fontaine ◽  
J. Friedel
Keyword(s):  
Point Defects ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Dislocation Network ◽  
Thermal Variation ◽  
Temperature Dependent ◽  
Cubic Metals ◽  
Thermally Activated ◽  
Stacking Fault Energies

The possible role of stacking faults is discussed in some problems of glide and twinning of cubic metals, especially at low temperatures.The first part analyzes a model for the thermal variation of macroyield in b.c.c. metals. If one assumes that the dislocations of such metals split along either the (110) or the (112) planes, the screw dislocations will be sessile. The strong temperature variation of macroyield could be due to the thermally activated slip of such screws, previously developed at lower stresses during the less temperature-dependent microyield. Reasonably high stacking-fault energies are required for satisfactory numerical fits.The second part studies the influence of a dense dislocation network on the propagation of a stacking fault. The friction force acting on the partial that propagates the fault must be taken into account when deducing a stacking-fault energy from the stress at which stacking faults develop in a strongly work-hardened (f.c.c.) metal. The trails of dipoles left at each tree crossed should prevent any creation of point defects; they should lead, after the faults have propagated some length, to its multiplication into a twin or martensitic lamella. The analogies with problems of slip bauds and dipole formation in easy glide are stressed.

Optimization of 150 mm 4H SiC Substrate Crystal Quality

2018 ◽  
Vol 924 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Gil Yong Chung ◽  
Edward Sanchez ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Marked Reduction ◽  
Stacking Faults ◽  
Continuous Optimization ◽  
Stacking Fault ◽  
Thermal Parameters ◽  
Crystal Quality ◽  
Growth Processes ◽  
Fault Density

Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stacking faults were nearly eliminated from wafers produced using the refined process. These quality enhancements corresponded to an adjustment to key thermal parameters predicted to control intrinsic crystal stresses, and a reduction in crystal dome curvature.

scholarly journals Study on Electromigration Effects and IMC Formation on Cu–Sn Films Due to Current Stress and Temperature

2020 ◽  
Vol 10 (24) ◽  
pp. 8893
Author(s):  
Zhao-Ying Wang ◽  
Nhat Minh Dang ◽  
Po-Hsun Wang ◽  
Terry Yuan-Fang Chen ◽  
Ming-Tzer Lin
Keyword(s):  
Intermetallic Compound ◽  
Growth Mechanism ◽  
Current Density ◽  
Structural Changes ◽  
Defect Formation ◽  
Copper Substrate ◽  
Signal Delay ◽  
Cross Sectional ◽  
Current Densities

In this study, the effects of electromigration on a solder/copper substrate due to temperature and current density stress were investigated. The copper–tin (Cu–Sn) film samples were subjected under a fixed current and various heating conditions (130 °C and 180 °C) and current densities (different cross-sectional areas). The micro-structural changes and intermetallic compound (IMC) formation were observed, and failure phenomena (brittle cracks, voids, bumps, etc.) on the structures of samples were discussed. The results showed that the IMC thickness increased as the temperature and current density increased. Moreover, it was found that the higher the temperature and current density was, the greater the defects that were observed. By adjusting the designs of sample structures, the stress from the current density can be decreased, resulting in reduced failure phenomena, such as signal delay, distortion, and short circuiting after long-term use of the material components. A detailed IMC growth mechanism and defect formation were also closely studied and discussed.

scholarly journals Non-diffusional growth mechanism of I1 basal stacking-faults inside twins in hcp metals

2019 ◽  
Vol 172 ◽  
pp. 149-153 ◽  
Author(s):  
Andriy Ostapovets ◽  
Anna Serra ◽  
Robert C. Pond
Keyword(s):  
Growth Mechanism ◽  
Stacking Faults ◽  
Diffusional Growth
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