scholarly journals Integration of microplasma with transmission electron microscopy: Real-time observation of gold sputtering and island formation

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
K. Tai ◽  
T. J. Houlahan ◽  
J. G. Eden ◽  
S. J. Dillon
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.


Nature ◽  
1992 ◽  
Vol 360 (6399) ◽  
pp. 51-53 ◽  
Author(s):  
K. Harada ◽  
T. Matsuda ◽  
J. Bonevich ◽  
M. Igarashi ◽  
S. Kondo ◽  
...  

2018 ◽  
Vol 24 (6) ◽  
pp. 623-633 ◽  
Author(s):  
Xin Li ◽  
Ondrej Dyck ◽  
Sergei V. Kalinin ◽  
Stephen Jesse

AbstractScanning transmission electron microscopy (STEM) has become the main stay for materials characterization on atomic level, with applications ranging from visualization of localized and extended defects to mapping order parameter fields. In recent years, attention has focused on the potential of STEM to explore beam induced chemical processes and especially manipulating atomic motion, enabling atom-by-atom fabrication. These applications, as well as traditional imaging of beam sensitive materials, necessitate increasing the dynamic range of STEM in imaging and manipulation modes, and increasing the absolute scanning speed which can be achieved by combining sparse sensing methods with nonrectangular scanning trajectories. Here we have developed a general method for real-time reconstruction of sparsely sampled images from high-speed, noninvasive and diverse scanning pathways, including spiral scan and Lissajous scan. This approach is demonstrated on both the synthetic data and experimental STEM data on the beam sensitive material graphene. This work opens the door for comprehensive investigation and optimal design of dose efficient scanning strategies and real-time adaptive inference and control of e-beam induced atomic fabrication.


2019 ◽  
Vol 25 (S2) ◽  
pp. 1122-1123
Author(s):  
Surya Narayanan ◽  
Reza Shahbazian-Yassar ◽  
Tolou Shokuhfar

Nanoscale ◽  
2019 ◽  
Vol 11 (25) ◽  
pp. 12242-12249
Author(s):  
Lukas Schlicker ◽  
Radian Popescu ◽  
Maged F. Bekheet ◽  
Andrew Doran ◽  
Dagmar Gerthsen ◽  
...  

This work clarifies the mechanism of the formation of hollow nanostructures (nanotubes and nanospheres) during the InOOH to rh-In2O3 transformation.


Sign in / Sign up

Export Citation Format

Share Document