scholarly journals Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Wen Jie Wang ◽  
Kuang Hong Gao ◽  
Zhi Qing Li
2020 ◽  
Vol 37 (5) ◽  
pp. 057301 ◽  
Author(s):  
Qixun Guo ◽  
Yu Wu ◽  
Longxiang Xu ◽  
Yan Gong ◽  
Yunbo Ou ◽  
...  

2018 ◽  
Vol 32 (16) ◽  
pp. 1850195 ◽  
Author(s):  
J. Zhang ◽  
R. Jin ◽  
Q. Y. Liu ◽  
T. Zhao ◽  
K. Zhao ◽  
...  

Epitaxial growth of thin films is an effective approach to minimize the contribution of bulk carriers for topological insulator (TI) Bi2Se3. Parameters used in preparation process are key factors for growing high quality thin films, especially for TI films. In this paper, magnetron sputtering was used for growing Bi2Se3 thin films on Si (100) substrates. Different working pressure and sputtering power were investigated. High-quality films could be obtained under relatively low pressure and low power. Linear and nonsaturated high-field linear magnetoresistance (LMR) was observed in high-quality films.


Author(s):  
OLIMPIA SALAS ◽  
Jianliang Lin ◽  
LIZBETH MELO-MAXIMO ◽  
Abril Erendira Murillo Sanchez ◽  
DULCE VIRIDIANA MELO MAXIMO ◽  
...  

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  

Author(s):  
K. E. Utkin ◽  
◽  
S. I. Torgashin ◽  
A. V. Khoshev ◽  
◽  
...  

Sign in / Sign up

Export Citation Format

Share Document