Analysis of Ferrosilicon and Silicon Carbide by an X-ray Fluorescence Fusion Method—An X-ray Diffraction Investigation of the Preliminary Oxidation

Silicon oxycarbide glass is formed by the pyrolysis of silicone resins and contains only silicon, oxygen, and carbon. The glass remains amorphous in x-ray diffraction to 1400 °C and shows no features in transmission electron micrographs (TEM) after heating to this temperature. After heating at higher temperature (1500–1650 °C) silicon carbide lines develop in x-ray diffraction, and fine crystalline regions of silicon carbide and graphite are found in TEM and electron diffraction. XPS shows that silicon-oxygen bonds in the glass are similar to those in amorphous and crystalline silicates; some silicons are bonded to both oxygen and carbon. Carbon is bonded to either silicon or carbon; there are no carbon-oxygen bonds in the glass. Infrared spectra are consistent with these conclusions and show silicon-oxygen and silicon-carbon vibrations, but none from carbon-oxygen bonds. 29Si-NMR shows evidence for four different bonding groups around silicon. The silicon oxycarbide structure deduced from these results is a random network of silicon-oxygen tetrahedra, with some silicons bonded to one or two carbons substituted for oxygen; these carbons are in turn tetrahedrally bonded to other silicon atoms. There are very small regions of carbon-carbon bonds only, which are not bonded in the network. This “free” carbon colors the glass black. When the glass is heated above 1400 °C this network composite rearranges in tiny regions to graphite and silicon carbide crystals. The density, coefficient of thermal expansion, hardness, elastic modulus, index of refraction, and viscosity of the silicon oxycarbide glasses are all somewhat higher than these properties in vitreous silica, probably because the silicon-carbide bonds in the network of the oxycarbide lead to a tighter, more closely packed structure. The oxycarbide glass is highly stable to temperatures up to 1600 °C and higher, because oxygen and water diffuse slowly in it.

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Pengaruh Suhu Sintering Terhadap Sintesis Silicon Carbide (SiC) Berbahan Dasar Abu Sekam Padi dan Grafit Pensil 2B

INDONESIAN JOURNAL OF APPLIED PHYSICS ◽

10.13057/ijap.v5i01.258 ◽

2015 ◽

Vol 5 (01) ◽

pp. 31

Author(s):

Resky Irfanita ◽

Asnaeni Ansar ◽

Ayu Hardianti Pratiwi ◽

Jasruddin J ◽

Subaer S

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Silicon Carbide ◽

Rice Husk Ash ◽

Sintering Temperature ◽

Solid State Reaction Method ◽

X Ray Diffraction ◽

Reaction Method ◽

X Ray ◽

Scanning Electron

The objective of this study is to investigate the effect of sintering temperature on the synthesis of SiC produced from rice husk ash (RHA) and 2B graphite pencils. The SiC was synthesized by using solid state reaction method sintered at temperatures of 750°C, 1000°C and 1200°C for 26 hours, 11.5 hours and 11.5 hours, respectively. The quantity and crystallinity level of SiC phase were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC was examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The XRD results showed that the concentration (wt%) of SiC phase increases with the increasing of sintering temperature. SEM results showed that the crystallinity level of SiC crystal is improving as the sintering temperature increases

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Reclamation of Abrasive Slurry to Obtain SiC Ceramic Material

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.905.333 ◽

2022 ◽

Vol 905 ◽

pp. 333-337

Author(s):

Sheng Fu Yang ◽

Chun Liang Chen ◽

Kuang Li Chien ◽

Chih Chao Liang ◽

Hsien Ho Chuo

Keyword(s):

Silicon Carbide ◽

Chemical Separation ◽

Distribution Analysis ◽

X Ray Diffraction ◽

X Ray ◽

Sic Ceramic ◽

Illegal Waste Disposal ◽

Main Component ◽

The Cost ◽

Illegal Waste

In the period of silicon and silicon carbide wafer slicing process, the abrasive oil, silicon carbide (SiC), silicon and trace elements e.g., iron, zinc, copper, and nickel is generated as an oily mixture of insoluble matter. The SiC is the main component (>70%) in the abrasive slurry and the extraction of SiC from the slurry can eliminate the risk of illegal waste disposal and reduce the cost for the enterprises. In this study, a chemical separation process is applied to remove silicon particles and SiC can be extracted from the slurry mixtures. The X-ray diffraction analysis revealed that recycled material is moissanite with two crystalline polymorphs. The 3C and 6H X-ray powder pattern is observed and the cubic and hexagonal crystalline structure is revealed. The particle size distribution analysis showed that median value of purified SiC powder material is 9.8 μm.

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Dependence of the Product's Phase Composition on the Ratio of Precursors in Plasmadynamic Synthesis of Silicon Carbide

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.769.114 ◽

2018 ◽

Vol 769 ◽

pp. 114-119 ◽

Cited By ~ 1

Author(s):

Artur A. Sivkov ◽

Artur Nassyrbayev ◽

Maksim Gukov

Keyword(s):

Electron Microscopy ◽

Silicon Carbide ◽

Synthesis Method ◽

X Ray Diffraction ◽

Central Electrode ◽

X Ray ◽

Transmission Electron ◽

Cubic Silicon Carbide ◽

Accelerator Channel ◽

Coaxial Magnetoplasma Accelerator

In this work, the powder of nanoscale cubic SiC was obtained by the plasmodynamic synthesis in a coaxial magnetoplasma accelerator (CMPA) with a graphite central electrode and an accelerator channel. The synthesis method allows obtaining a product with a high content of nanoscale cubic silicon carbide. The work is aimed to study the influence of the precursor’s ratio on the product. The synthesized products were analyzed by X-ray diffraction and transmission electron microscopy.

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Biomorphic SiC Prepared from Carbonized Millet by Sol-Gel and Carbothermal Reduction Processing

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.152-153.1683 ◽

2010 ◽

Vol 152-153 ◽

pp. 1683-1686

Author(s):

Qing Wang ◽

Ya Hui Zhang

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Silicon Carbide ◽

Phase Composition ◽

Carbothermal Reduction ◽

Sol Gel ◽

X Ray Diffraction ◽

X Ray ◽

Carbon Template ◽

Scanning Electron

Biomorphic silicon carbide (bioSiC) was prepared by high temperature pyrolysis and sol-gel and carbothermal reduction processing at 1600 oC. The morphology and microstructure of carbon-silica composites and purified bioSiC samples were characterized by scanning electron microscopy. The phase composition of the resulting sample was analyzed by X-ray diffraction. The results suggest that the bioSiC mainly consists of cubic ß-SiC, and principally replicates the shape and microstructure of the carbon template.

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X-ray Diffraction, Micro-Raman and Birefringence Imaging of Silicon Carbide

Materials Science Forum ◽

10.4028/www.scientific.net/msf.353-356.283 ◽

2001 ◽

Vol 353-356 ◽

pp. 283-286 ◽

Cited By ~ 5

Author(s):

Etienne Pernot ◽

Michel Mermoux ◽

J. Kreisel ◽

O. Chaix-Pluchery ◽

Petra Pernot-Rejmánková ◽

...

Keyword(s):

Silicon Carbide ◽

X Ray Diffraction ◽

X Ray

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X-ray diffraction study of crystal plane distortion in silicon carbide substrates

Journal of Applied Physics ◽

10.1063/1.2362918 ◽

2006 ◽

Vol 100 (9) ◽

pp. 093510 ◽

Cited By ~ 2

Author(s):

M. A. Mastro ◽

M. Fatemi ◽

D. K. Gaskill ◽

K.-K. Lew ◽

B. L. Van Mil ◽

...

Keyword(s):

Silicon Carbide ◽

Diffraction Study ◽

Crystal Plane ◽

X Ray Diffraction ◽

X Ray

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Laser Mixing of Titanium on Silicon Carbide

MRS Proceedings ◽

10.1557/proc-157-395 ◽

1989 ◽

Vol 157 ◽

Cited By ~ 5

Author(s):

T. R. Jervis ◽

J-P. Hirvonen ◽

M. Nastasi ◽

M. R. Cohen

Keyword(s):

Silicon Carbide ◽

Excimer Laser ◽

Laser Processing ◽

Surface Region ◽

Substrate Material ◽

Laser Surface ◽

X Ray Diffraction ◽

Mixing Conditions ◽

Surface Processing ◽

X Ray

ABSTRACTWe have used excimer laser surface processing to melt and mix single Ti layers into the surface of polycrystalline SiC substrates. The mixing of Ti into the surface is very rapid and efficient. Examination of Rutherford backscattering (RBS) data for different mixing conditions shows the formation of a preferred composition at the Ti-substrate interface which propagates from the interface with further mixing. Reconstruction of the RBS spectrum indicates that the composition of the layer is Ti45C37Si18. X-ray diffraction demonstrates the formation of Ti suicides and carbides in the surface region. Profiling of C in both mixed and uncoated samples by 6 MeV He+ scattering demonstrates that laser processing of the SiC does not cause major changes in the stoichiometry of the substrate material.

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