Characterization of doped strontium sulfide thin films by secondary ion mass spectrometry, Rutherford backscattering spectrometry and X-ray fluorescence spectrometry

Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.

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Depth Profiling of Layered Si−O−Al Thin Films with Secondary Ion Mass Spectrometry and Rutherford Backscattering Spectrometry

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ◽

10.1134/s102745101902023x ◽

2019 ◽

Vol 13 (2) ◽

pp. 300-305 ◽

Cited By ~ 2

Author(s):

V. I. Bachurin ◽

N. S. Melesov ◽

A. A. Mironenko ◽

E. O. Parshin ◽

A. S. Rudy ◽

...

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Secondary Ion Mass Spectrometry ◽

Rutherford Backscattering Spectrometry ◽

Depth Profiling ◽

Rutherford Backscattering ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Chromium implantation in silica glass

Journal of Materials Research ◽

10.1557/jmr.1996.0028 ◽

1996 ◽

Vol 11 (1) ◽

pp. 229-235 ◽

Cited By ~ 13

Author(s):

E. Cattaruzza ◽

R. Bertoncello ◽

F. Trivillin ◽

P. Mazzoldi ◽

G. Battaglin ◽

...

Keyword(s):

Mass Spectrometry ◽

Photoelectron Spectroscopy ◽

Silica Glass ◽

Electron Spectroscopy ◽

Auger Electron ◽

Secondary Ion Mass Spectrometry ◽

Rutherford Backscattering Spectrometry ◽

X Ray ◽

Chromium Silicide ◽

Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

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Ultra Shallow Depth Profiling with SIMS

Materials Science Forum ◽

10.4028/www.scientific.net/msf.573-574.197 ◽

2008 ◽

Vol 573-574 ◽

pp. 197-205 ◽

Cited By ~ 1

Author(s):

H. Ulrich Ehrke

Keyword(s):

Mass Spectrometry ◽

Thin Films ◽

Secondary Ion Mass Spectrometry ◽

Diffusion Processes ◽

Depth Profiling ◽

Semiconductor Technology ◽

Technology Standard ◽

Secondary Ion ◽

Analytical Requirements

Secondary Ion Mass Spectrometry (SIMS) is frequently used in the characterization of thin films, coatings, diffusion processes, materials composition and in the analysis of implants. The SIMS technique has been continuously developed for more than 30 years. One of the main drivers was semiconductor technology. Standard implants in Si like B, As and P, implanted with a few keV to MeV energy are routinely measured with high precision. But nowadays with implant energies of 500 eV and below, when ultra shallow structures are examined, the desired information is in the first few nm to some tens of nm. This has a great impact on the analytical requirements and quantification procedures. Some of these aspects will be examined in this contribution.

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