Manganese in 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 701-704
Author(s):  
Margareta K. Linnarsson ◽  
Aurégane Audren ◽  
Anders Hallén
Keyword(s):  
Mass Spectrometry ◽  
Heat Treatment ◽  
Ion Implantation ◽  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
P Type ◽  
Secondary Ion

Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.

Ion Implantation and Characterization of III-V Materials

1988 ◽  
Vol 144 ◽  
Author(s):  
R. G. Wilson ◽  
D. B. Rensch
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Electrical Device ◽  
Ion Mass Spectrometry ◽  
Secondary Ion ◽  
Depth Distributions

ABSTRACTWe have implanted most dopant elements into GaAs, GaP, InP, and InSb, to energies from 10 to 700 keV, and a few up to 2.4 MeV, in random and channeled orientation, annealed some of these implants, and measured the depth distributions using secondary ion mass spectrometry (SIMS) . We have calculated values of Rm, Rp, ΔRp, γ1, β2, using an LSS formulation, and measured these same profile parameters for the experimental profiles using a Pearson IV computer fitting routine. We describe a study of the fabrication of self-aligned W-gate FETs in GaAs using Si-implanted channels and source/drains, and a buried p implant (Be or Mg) to compensate the backside (tail) of the Si profile. The implant profiles and electrical device characteristics, including the effects on AVt of various implant conditions, are discussed.

Calibration Method for Elemental Quantification

2000 ◽  
Vol 6 (S2) ◽  
pp. 536-537
Author(s):  
C. B. Vartuli ◽  
F. A. Stevie ◽  
L. A. Giannuzzi ◽  
T. L. Shofner ◽  
B. M. Purcell ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Peak Concentration ◽  
Energy Dispersive Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Calibration Method ◽  
High Dose ◽  
High Concentration ◽  
Borophosphosilicate Glass ◽  
Secondary Ion

Energy Dispersive Spectrometry (EDS) is generally calibrated for quantification using elemental standards. This can introduce errors when quantifying non-elemental samples and does not provide an accurate detection limit. In addition, variations between analysis tools can lead to values that differ considerably, especially for trace elements. By creating a standard with an exact trace composition, many of the errors inherent in EDS quantification measurements can be eliminated.The standards are created by high dose ion implantation. For ions implanted into silicon, a dose of 1E16 cm-2 results in a peak concentration of approximately 1E21 cm-3 or 2% atomic. The exact concentration can be determined using other methods, such as Rutherford Backscattering Spectrometry (RBS) or Secondary Ion Mass Spectrometry (SIMS). For this study, SIMS analyses were made using a CAMECA IMS-6f magnetic sector. Measurement protocols were used that were developed for high concentration measurements, such as B and P in borophosphosilicate glass (BPSG).

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