Improving Stability of Pentacene Field-Effect Transistors with Post-Annealing
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AbstractIn this report, we demonstrate that the performance and stability of pentacene top-contact field-effect transistor can be greatly improved with post-annealing treatment. After post-annealing at 90°C for 12 hours in nitrogen environment, the hole field-effect mobility of 0.3 cm2/Vs and the on/off current ratio of 107 were achieved, demonstrating 100% improvement in performance after the post-annealing treatment. The decay rate of drain current at constant gate and drain-source voltage was found to be decreased by more than 40%. The improved performance is attributed to the elimination of trapped holes and lattice defects in the organic semiconductor layer due to the post-annealing process.
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2021 ◽
2009 ◽
Vol 23
(19)
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pp. 3871-3880
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2014 ◽
Vol 778-780
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pp. 436-439
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2021 ◽
Vol 11
(1)
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pp. 780
2020 ◽
Vol 16
(4)
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pp. 595-607
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