Improved performance of sub-10-nm band-to-band tunneling n-i-n graphene nanoribbon field-effect transistors using underlap engineering: A quantum simulation study

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2021.110312 ◽

2021 ◽

pp. 110312

Author(s):

Khalil Tamersit ◽

Zeinab Ramezani ◽

I.S. Amiri

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Band To Band Tunneling ◽

Improved Performance

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Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153287 ◽

2020 ◽

Vol 122 ◽

pp. 153287 ◽

Cited By ~ 6

Author(s):

Khalil Tamersit

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Attributes in the Performance and Design Considerations of Asymmetric Drain and Source Regions in Carbon Nanotube Field Effect Transistors: Quantum Simulation Study

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0061607jss ◽

2016 ◽

Vol 5 (7) ◽

pp. M63-M68 ◽

Cited By ~ 13

Author(s):

Ali Naderi ◽

Seyed Abolfazl Ahmadmiri

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Simulation ◽

Design Considerations ◽

Source Regions

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Electron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3528338 ◽

2010 ◽

Vol 97 (26) ◽

pp. 263109 ◽

Cited By ~ 31

Author(s):

Deblina Sarkar ◽

Michael Krall ◽

Kaustav Banerjee

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Graphene Nanoribbon ◽

Electron Hole ◽

Tunneling Process ◽

Band To Band Tunneling

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Graphene NanoRibbon Field Effect Transistors Analysis and Applications

Superlattices and Microstructures ◽

10.1016/j.spmi.2021.106869 ◽

2021 ◽

pp. 106869

Author(s):

Tahereh Radsar ◽

Hassan Khalesi ◽

Vahid Ghods

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Graphene Nanoribbon

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Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Cited By ~ 11

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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New device structures for graphene nanoribbon field effect transistors

Materials Express ◽

10.1166/mex.2016.1304 ◽

2016 ◽

Vol 6 (3) ◽

pp. 265-270 ◽

Cited By ~ 1

Author(s):

Mahdiar Ghadiry ◽

Harith Ahmad ◽

Chong Wu Yi ◽

Asrulnizam Abd Manaf

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Graphene Nanoribbon ◽

New Device ◽

Device Structures

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Suspended Graphene Nanoribbon Ion-Sensitive Field-Effect Transistors Formed by Shrink Lithography for pH/Cancer Biomarker Sensing

Journal of Microelectromechanical Systems ◽

10.1109/jmems.2013.2254701 ◽

2013 ◽

Vol 22 (5) ◽

pp. 1140-1146 ◽

Cited By ~ 10

Author(s):

Bo Zhang ◽

Tianhong Cui

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Cancer Biomarker ◽

Graphene Nanoribbon ◽

Suspended Graphene

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A TCAD Simulation Study of Three-Independent-Gate Field-Effect Transistors at the 10-nm Node

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3089671 ◽

2021 ◽

pp. 1-7

Author(s):

Patsy Cadareanu ◽

Pierre-Emmanuel Gaillardon

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Tcad Simulation ◽

Independent Gate

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Cited By ~ 11

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

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Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.917329 ◽

2008 ◽

Vol 55 (4) ◽

pp. 1094-1095 ◽

Cited By ~ 5

Author(s):

Gianluca Fiori ◽

Giuseppe Iannaccone ◽

Gerhard Klimeck

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Dimensional Simulation ◽

Realistic Geometry

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