The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer

2014 ◽  
Vol 2 (16) ◽  
pp. 2998-3004 ◽  
Author(s):  
Mingdong Yi ◽  
Yuxiu Guo ◽  
Jialin Guo ◽  
Tao Yang ◽  
Yuhua Chai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bending Effect ◽  
Mechanical Bending

Low operational voltage flexible organic thin-film transistors (OTFTs) have been achieved using two layers of cross-linked PVP as the dielectric layer on a flexible polyimide (PI) substrate.

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Base Layer ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

High-Performance Low Voltage Organic Thin-Film Transistors

2005 ◽  
Vol 870 ◽  
Author(s):  
Stijn De Vusser ◽  
Soeren Steudel ◽  
Kris Myny ◽  
Jan Genoe ◽  
Paul Heremans
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Organic Thin Film Transistors ◽  
Ring Oscillator ◽  
Ring Oscillators ◽  
Organic Thin Film ◽  
Supply Voltages

AbstractIn this work, we report on high-performance low voltage pentacene Organic Thin-Film Transistors (OTFT's) and circuits. Inverters and ring oscillators have been designed and fabricated. At 15 V supply voltage, we have observed invertors showing a voltage gain of 9 and an output swing of more than 13 V. As for the ring oscillators, oscillations started at supply voltages as low as 8.5 V. At a supply voltage of only 15 V, a stage delay time of 3.3 νs is calculated from experimental results.We believe that these results show for the first time a high speed ring oscillator at relatively low supply voltages. The required supply voltages can be obtained by rectification using an organic (pentacene) diode. These results may have an important impact on the realization of RF-ID tags: by integrating our circuits with an organic diode, the fabrication of organic RF-ID tags comes closer.

Low-voltage, high-performance n-channel organic thin-film transistors based on tantalum pentoxide insulator modified by polar polymers

2009 ◽  
Vol 10 (2) ◽  
pp. 346-351 ◽  
Author(s):  
Linfeng Lan ◽  
Junbiao Peng ◽  
Mingliang Sun ◽  
Jianlin Zhou ◽  
Jianhua Zou ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Tantalum Pentoxide ◽  
Organic Thin Film ◽  
Polar Polymers

Solution-Prepared Hybrid-Nanoparticle Dielectrics for High-Performance Low-Voltage Organic Thin-Film Transistors

2009 ◽  
Vol 1 (10) ◽  
pp. 2230-2236 ◽  
Author(s):  
Ye Gan ◽  
Qin Jia Cai ◽  
Chang Ming Li ◽  
Hong Bin Yang ◽  
Zhi Song Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Hybrid Nanoparticle

scholarly journals Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

2018 ◽  
Vol 8 (8) ◽  
pp. 1341 ◽  
Author(s):  
Rei Shiwaku ◽  
Masataka Tamura ◽  
Hiroyuki Matsui ◽  
Yasunori Takeda ◽  
Tomohide Murase ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Charge Carrier Density ◽  
Organic Thin Film ◽  
Carrier Distribution ◽  
Dual Gate

Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices.

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