Band gap grading and photovoltaic performance of solution-processed Cu(In,Ga)S2 thin-film solar cells

2014 ◽  
Vol 16 (48) ◽  
pp. 27112-27118 ◽  
Author(s):  
So Hyeong Sohn ◽  
Noh Soo Han ◽  
Yong Jin Park ◽  
Seung Min Park ◽  
Hee Sang An ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
Photophysical Properties ◽  
Photovoltaic Performance ◽  
Thin Film Solar Cells ◽  
Electrical Characteristics ◽  
Coating Methods

The photophysical properties of CIGS thin films, prepared by solution-based coating methods, are investigated to understand the correlation between the optical properties and the electrical characteristics of solar cells.

Efficiency Enhancement by Optimizing Selenization Time for Co-Sputtered Cu2ZnSn(S,Se)4 Thin Film Solar Cells

2019 ◽  
Vol 793 ◽  
pp. 35-39
Author(s):  
Luan Hong Sun ◽  
Hong Lie Shen ◽  
Hu Lin Huang ◽  
Hui Rong Shang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Thin Film Solar Cells ◽  
Efficiency Enhancement ◽  
Diffraction Angle

To reveal the effects of annealing condition on CZTSSe thin film solar cells, co-sputtering and subsequent selenization were used to prepare CZTSSe thin films. Structural, morphological and optical properties of CZTSSe thin films were investigated. CZTSSe thin films with various Se/(S+Se) ratio ranging from 0.69-0.78 were obtained. Representative peaks corresponding to CZTSSe in XRD and Raman results showed a slight shift to lower diffraction angle and wavenumbers. Selenization time significantly influenced the morphologies of CZTSSe films and the gradual grown up grain size was observed. VOCdeficit values down to 839 mV was achieved for the best cell. CZTSSe solar cell with the selenization time of 10 min showed a best conversion efficiency of 5.32%, which presented a 50% enhancement comparing to the solar cells with insufficient and over-selenized absorbers.

Photovoltaic performance of flexible Cu(In,Ga)Se2 thin-film solar cells with varying Cr impurity barrier thickness

2013 ◽  
Vol 13 (9) ◽  
pp. 2033-2037 ◽  
Author(s):  
Dae-Hyung Cho ◽  
Yong-Duck Chung ◽  
Kyu-Seok Lee ◽  
Kyung-Hyun Kim ◽  
Ju-Hee Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Photovoltaic Performance ◽  
Thin Film Solar Cells ◽  
Barrier Thickness

scholarly journals Routes to develop a [S]/([S]+[Se]) gradient in wide band-gap Cu2ZnGe(S,Se)4 thin-film solar cells

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Thin Film Solar Cells ◽  
Wide Band Gap

CdTe Thin Film Solar Cells: The CdS/SnO2 Front Contact

2001 ◽  
Vol 668 ◽  
Author(s):  
J. Fritsche ◽  
S. Gunst ◽  
A. Thiβen ◽  
R. Gegenwart ◽  
A. Klein ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Tin Dioxide ◽  
Surface Preparation ◽  
Thin Film Solar Cells ◽  
Subsequent Formation ◽  
Coated Glass ◽  
Preparation Conditions

ABSTRACTTin dioxide (SnO2) coated glass is the commonly used substrate for thin film solar cells based on CdTe absorbers. We have investigated the properties of the CdS/SnO2 interface by X-ray and ultraviolet photoelectron spectroscopy. SnO2 coated glass substrates as used for solar cell preparation were cleaned by different procedures such as derinsing, sputtering, heating and annealing in oxygen atmosphere. Different surface properties with a strongly dependent number of defects in the SnO2 band gap are identified. CdS films were deposited stepwise by thermal evaporation to determine the electronic interface properties for different surface preparation conditions. Comparative barrier heights at the CdSSnO2 contact are found for most surface pretreatments. The Fermi level position in these cases is situated in the SnO2 band gap. A different interface behaviour is determined for sputter cleaned SnO2 surfaces, which is attributed to the formation of oxygen vacancies during sputtering and subsequent formation of an interfacial SnOxSy compound.

A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

2014 ◽  
Vol 47 (13) ◽  
pp. 135105 ◽  
Author(s):  
Se Jin Park ◽  
Yunae Cho ◽  
Sung Hwan Moon ◽  
Ji Eun Kim ◽  
Doh-Kwon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Comparative Study ◽  
Band Gap ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
High Band

Cu 2 Si x Sn 1− x S 3 Thin Films Prepared by Reactive Magnetron Sputtering For Low-Cost Thin Film Solar Cells

2011 ◽  
Vol 28 (10) ◽  
pp. 108801 ◽  
Author(s):  
Chang Yan ◽  
Fang-Yang Liu ◽  
Yan-Qing Lai ◽  
Jie Li ◽  
Ye-Xiang Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Magnetron Sputtering ◽  
Low Cost ◽  
Reactive Magnetron Sputtering ◽  
Thin Film Solar Cells ◽  
Reactive Magnetron

Studies on the graded band-gap copper indium di-selenide thin film solar cells prepared by electrochemical route

2019 ◽  
Vol 466 ◽  
pp. 358-366 ◽  
Author(s):  
Ashwini B. Rohom ◽  
Priyanka U. Londhe ◽  
Jeong In Han ◽  
Nandu B. Chaure
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Thin Film Solar Cells ◽  
Copper Indium ◽  
Graded Band Gap ◽  
Selenide Thin Film
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