Non-destructive functionalisation for atomic layer deposition of metal oxides on carbon nanotubes: effect of linking agents and defects

The hybridisation of metal oxides and nanocarbons has created a promising new class of functional materials for environmental and sustainable energy applications.

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The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing

Physical Chemistry Chemical Physics ◽

10.1039/b821555c ◽

2009 ◽

Vol 11 (19) ◽

pp. 3615 ◽

Cited By ~ 44

Author(s):

Marc-Georg Willinger ◽

Giovanni Neri ◽

Anna Bonavita ◽

Giuseppe Micali ◽

Erwan Rauwel ◽

...

Keyword(s):

Carbon Nanotubes ◽

Atomic Layer Deposition ◽

Metal Oxides ◽

Gas Sensing ◽

Atomic Layer ◽

Layer Deposition ◽

Controlled Deposition

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Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

10.29363/nanoge.hopv.2019.166 ◽

2019 ◽

Author(s):

Claire Burgess ◽

Farzad Mardekatani Asl ◽

Valerio Zardetto ◽

Herbert Lifka ◽

Sjoerd Veenstra ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxides ◽

Atomic Layer ◽

Hybrid Perovskite ◽

Layer Deposition

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Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

Thin Solid Films ◽

10.1016/j.tsf.2013.06.079 ◽

2013 ◽

Vol 542 ◽

pp. 219-224 ◽

Cited By ~ 15

Author(s):

Väino Sammelselg ◽

Ivan Netšipailo ◽

Aleks Aidla ◽

Aivar Tarre ◽

Lauri Aarik ◽

...

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Metal Oxides ◽

Chemical Resistance ◽

Atomic Layer ◽

Layer Deposition

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Direct formation of anatase TiO2nanoparticles on carbon nanotubes by atomic layer deposition and their photocatalytic properties

Nanotechnology ◽

10.1088/0957-4484/27/40/405702 ◽

2016 ◽

Vol 27 (40) ◽

pp. 405702 ◽

Cited By ~ 7

Author(s):

Sheng-Hsin Huang ◽

Shih-Yun Liao ◽

Chih-Chieh Wang ◽

Chi-Chung Kei ◽

Jon-Yiew Gan ◽

...

Keyword(s):

Carbon Nanotubes ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Photocatalytic Properties ◽

Layer Deposition ◽

Direct Formation

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Deposition of Pt Nanoparticles on Oxygen Plasma Treated Carbon Nanotubes by Atomic Layer Deposition

ECS Transactions ◽

10.1149/1.2981924 ◽

2019 ◽

Vol 16 (2) ◽

pp. 855-862 ◽

Cited By ~ 7

Author(s):

Yang-Chih Hsueh ◽

Chia-Te Hu ◽

Chih-Chieh Wang ◽

Chueh Liu ◽

Tsong-Pyng Perng

Keyword(s):

Carbon Nanotubes ◽

Atomic Layer Deposition ◽

Oxygen Plasma ◽

Pt Nanoparticles ◽

Atomic Layer ◽

Layer Deposition ◽

Treated Carbon

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Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Nanomaterials ◽

10.3390/nano9081085 ◽

2019 ◽

Vol 9 (8) ◽

pp. 1085 ◽

Cited By ~ 1

Author(s):

Kemelbay ◽

Tikhonov ◽

Aloni ◽

Kuykendall

Keyword(s):

Carbon Nanotubes ◽

Atomic Layer Deposition ◽

Field Effect Transistors ◽

Atomic Layer ◽

Oxide Thickness ◽

Ambient Conditions ◽

Nucleation Layer ◽

Layer Deposition ◽

High K ◽

High K Dielectric

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

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Atomic Layer Deposition for Improved Stability of Catalysts for the Conversion of Biomass to Chemicals and Fuels

MRS Proceedings ◽

10.1557/opl.2011.1320 ◽

2011 ◽

Vol 1366 ◽

Author(s):

Monika K. Wiedmann ◽

Yomaira J. Pagan-Torres ◽

Mark H. Tucker ◽

James A. Dumesic ◽

T. F. Kuech

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxides ◽

Rate Constant ◽

Flow Reactor ◽

Atomic Layer ◽

Deactivation Rate ◽

Layer Deposition ◽

Improved Stability ◽

Deactivation Rate Constant ◽

Acid Catalyzed

ABSTRACTAtomic layer deposition (ALD) has been used to coat SBA-15 and functionalized SBA-15 with various metal oxides. Use of SBA-15 coated with 4-10 ALD cycles of titania, alumina, niobia, or zirconia in the acid-catalyzed dehydration of fructose to 5-hydroxymethylfurfural (HMF) resulted in 24-57% conversion, with 0-22% selectivity, at 130 °C with 2 wt % fructose in 4:1 THF:H2O. Propylsulfonic acid functionalized SBA-15 (SBA-15-PrSO3H) had a 25% conversion and 48% selectivity for HMF under the same conditions. SBA-15-PrSO3H was also coated with 2 ALD cycles of titania followed by 8 ALD cycles silica. The deactivation rate constant for SBA-15-PrSO3H was 2.7 x 10-2 h-1 for the dehydration of fructose to HMF in a flow reactor at 130 °C with a feed of 2 wt % fructose in 4:1 THF:H2O. In comparison, the deactivation rate constant for the ALD coated SBA-15-PrSO3H-ALD was 7.9 x 10-3 h-1.

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