Transparent Conducting Antimony Doped Tin Oxide (ATO) Films Have Been Prepared on Quartz Substrate by Pulsed Laser Deposition (PLD) Technology. Despite of Extensive Researches of ATO Films Prepared by other Methods, the Study of PLD Technology Is Relatively few. PLD Technology Is Distinctive to Maintain the Elemental Components between the Targets and the Obtained Thin Flms under Optimal Conditions Contributing to Precise Control of Composition and Doping Ratio of ATO Films. The Effect of Sb2O3 Doping on the Electrical and Optical Properties of the ATO Films Was Investigated with Various Sb2O3 Doping Ratio (mol%) as 2, 4, 6, 8, 10 at 500 °C in an Oxygen Pressure of 8 Pa. The Results Suggest that the Electrical Resistivity Is Firstly Decreased and then Increased with the Increase of Sb2O3 Doping Ratio. When the Sb2O3 Doping Ratio Is about 6 mol%, the Optimal Electrical Resistivity Is 3.5×10-3 Ω.cm and the Average Optical Transmittance Is 83.1%. It Is Significant to Clarify the Impact Mechanism of Sb2O3 Doping Ratio to Get the Best Electrical and Optical Physical Properties. it Is Supposed that the Carrier Concentration Dominates at a Low Sb2O3 Doing Ratio while a Scattering Effect Is Performed at a High Sb2O3 Doing Ratio.
Electrical and optical properties of W-doped ZnO films grownon (11\bar{2}0) sapphire substrates using pulsed laser deposition
