Investigating the mechanism of phase transformations and migration in olivine at high temperature

RSC Advances ◽  
2014 ◽  
Vol 4 (51) ◽  
pp. 26645-26652 ◽  
Author(s):  
R. Michel ◽  
M. R. Ammar ◽  
E. Véron ◽  
P. Simon ◽  
J. Poirier

A framework is presented to define the formation and migration mechanisms of oxides in olivine during their phase transformations at high temperature.

RSC Advances ◽  
2014 ◽  
Vol 4 (86) ◽  
pp. 45960-45960
Author(s):  
R. Michel ◽  
M. R. Ammar ◽  
E. Véron ◽  
P. Simon ◽  
J. Poirier

2018 ◽  
Vol 8 (7) ◽  
pp. 1669-1685 ◽  
Author(s):  
Modassir Akhtar ◽  
Akhil Khajuria ◽  
Jitendra K. Sahu ◽  
J. Swaminathan ◽  
Rajneesh Kumar ◽  
...  

1996 ◽  
Vol 220 (1-3) ◽  
pp. 149-157 ◽  
Author(s):  
V.D. Blank ◽  
S.G. Buga ◽  
N.R. Serebryanaya ◽  
G.A. Dubitsky ◽  
S.N. Sulyanov ◽  
...  

1991 ◽  
Vol 246 ◽  
Author(s):  
J.A. Horton ◽  
E.P. George ◽  
C.J. Sparks ◽  
M.Y. Kao ◽  
O.B. Cavin ◽  
...  

AbstractA survey by differential scanning calorimetry (DSC) and recovery during heating of indentations on a series of nickel-aluminum alloys showed that the Ni-36 at.% Al composition has the best potential for a recoverable shape memory effect at temperatures above 100°C. The phase transformations were studied by high temperature transmission electron microscopy (TEM) and by high temperature x-ray diffraction (HTXRD). Quenching from 1200°C resulted in a single phase, fully martensitic structure. The initial quenched-in martensites were found by both TEM and X-ray diffraction to consist of primarily a body centered tetragonal (bct) phase with some body centered orthorhombic (bco) phase present. On the first heating cycle, DSC showed an endothermic peak at 121°C and an exothermic peak at 289°C, and upon cooling a martensite exothermic peak at 115° C. Upon subsequent cycles the 289°C peak disappeared. High temperature X-ray diffraction, with a heating rate of 2°C/min, showed the expected transformation of bct phase to B2 between 100 and 200°C, however the bco phase remained intact. At 400 to 450°C the B2 phase transformed to Ni2Al and Ni5Al3. During TEM heating experiments a dislocation-free martensite transformed reversibly to B2 at temperatures less than 150°C. At higher temperatures (nearly 600°C) 1/3, 1/3, 1/3 reflections from an ω-like phase formed. Upon cooling, the 1/3, 1/3, 1/3 reflections disappeared and a more complicated martensite resulted. Boron additions suppressed intergranular fracture and, as expected, resulted in no ductility improvements. Boron additions and/or hot extrusion encouraged the formation of a superordered bct structure with 1/2, 1/2, 0 reflections.


2005 ◽  
Vol 20 (02) ◽  
pp. 94-96 ◽  
Author(s):  
Thomas N. Blanton ◽  
Swavek Zdzieszynski ◽  
Michael Nicholas ◽  
Scott Misture

Author(s):  
M. Carbucicchio ◽  
C. Grazzi ◽  
G. Palombarini ◽  
M. Rateo ◽  
G. Sambogna

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 002481-002506
Author(s):  
Mathias Nowottnick ◽  
Andreas Fix

The electromigration effects in chip metallization and wire bonds are well known and detailed investigated. Current density could be extremely high because of the small size of the cross sectional area of conductors. This can cause a migration of metal atoms toward the electrical field, so current densities up to 106 A/cm2 are possible. In comparison with chip structures are the usual solder joints of flip chips relatively thick. But the homologue temperature of solder alloys, typically based on tin, is also much higher than for gold or aluminum wires. For instance a SAC solder alloy is naturally preheated up to 0.6 homologue temperature, for high temperature application with 125 °C operating temperature even more than 0.8. This means, that atoms are very agile and a directed movement needs only lower field strength. Additionally is the specific resistance of solder alloys tenfold higher than for aluminum, copper or silver. So is the self-heating of solder joints not negligible. This contribution shows the test results of flip-chip assemblies, loaded with different current densities and stored at 125 °C ambient temperature. At the end of life of a significant number of test chips, a metallographic analysis shows the causing failure effects and weak spots of assemblies. Accompanying simulations help to explain the interaction between current density and migration effects.


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