Electromigration in Solder Joints for High Temperature Flip-Chip Application

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 002481-002506
Author(s):  
Mathias Nowottnick ◽  
Andreas Fix
Keyword(s):  
High Temperature ◽  
Current Density ◽  
Flip Chip ◽  
Solder Joints ◽  
Metallographic Analysis ◽  
Solder Alloys ◽  
Directed Movement ◽  
Cross Sectional ◽  
Current Densities ◽  
And Migration

The electromigration effects in chip metallization and wire bonds are well known and detailed investigated. Current density could be extremely high because of the small size of the cross sectional area of conductors. This can cause a migration of metal atoms toward the electrical field, so current densities up to 106 A/cm2 are possible. In comparison with chip structures are the usual solder joints of flip chips relatively thick. But the homologue temperature of solder alloys, typically based on tin, is also much higher than for gold or aluminum wires. For instance a SAC solder alloy is naturally preheated up to 0.6 homologue temperature, for high temperature application with 125 °C operating temperature even more than 0.8. This means, that atoms are very agile and a directed movement needs only lower field strength. Additionally is the specific resistance of solder alloys tenfold higher than for aluminum, copper or silver. So is the self-heating of solder joints not negligible. This contribution shows the test results of flip-chip assemblies, loaded with different current densities and stored at 125 °C ambient temperature. At the end of life of a significant number of test chips, a metallographic analysis shows the causing failure effects and weak spots of assemblies. Accompanying simulations help to explain the interaction between current density and migration effects.

scholarly journals Study on Electromigration Effects and IMC Formation on Cu–Sn Films Due to Current Stress and Temperature

2020 ◽  
Vol 10 (24) ◽  
pp. 8893
Author(s):  
Zhao-Ying Wang ◽  
Nhat Minh Dang ◽  
Po-Hsun Wang ◽  
Terry Yuan-Fang Chen ◽  
Ming-Tzer Lin
Keyword(s):  
Intermetallic Compound ◽  
Growth Mechanism ◽  
Current Density ◽  
Structural Changes ◽  
Defect Formation ◽  
Copper Substrate ◽  
Signal Delay ◽  
Cross Sectional ◽  
Current Densities

In this study, the effects of electromigration on a solder/copper substrate due to temperature and current density stress were investigated. The copper–tin (Cu–Sn) film samples were subjected under a fixed current and various heating conditions (130 °C and 180 °C) and current densities (different cross-sectional areas). The micro-structural changes and intermetallic compound (IMC) formation were observed, and failure phenomena (brittle cracks, voids, bumps, etc.) on the structures of samples were discussed. The results showed that the IMC thickness increased as the temperature and current density increased. Moreover, it was found that the higher the temperature and current density was, the greater the defects that were observed. By adjusting the designs of sample structures, the stress from the current density can be decreased, resulting in reduced failure phenomena, such as signal delay, distortion, and short circuiting after long-term use of the material components. A detailed IMC growth mechanism and defect formation were also closely studied and discussed.

Numerical Simulations of Electromigration and Stress Migration Driven Void Propagation in Pb Free Solder Interconnects

2011 ◽  
Author(s):  
Subramanya Sadasiva ◽  
Ganesh Subbarayan ◽  
Lei Jiang ◽  
Daniel Pantuso
Keyword(s):  
Flip Chip ◽  
Field Model ◽  
Solder Joints ◽  
Equations Of Motion ◽  
Phase Field Model ◽  
Solder Interconnects ◽  
Energy Stress ◽  
Current Densities ◽  
Void Propagation ◽  
Free Solder

Increasing miniaturization has led a significant increase in the current densities seen in flip-chip solder joints. This has made the study of failure in solder joints by void propagation due to electromigration and stress migration more important. In this study, we develop a phase field model for the motion of voids through a flip chip solder interconnect. We derive equations of motion for the void accounting for energetic contributions from the active factors of surface energy, stress and electric potential, taking into account both surface diffusion and transfer of the material through the bulk of the material. We describe the implementation of this model using finite elements, coupled with a commercial finite element solver to solve for the fields driving the void motion.

Temperature and current-density distributions in flip-chip solder joints with Cu traces

2006 ◽  
Vol 35 (5) ◽  
pp. 947-953 ◽  
Author(s):  
C. Y. Hsu ◽  
D. J. Yao ◽  
S. W. Liang ◽  
Chih Chen ◽  
Everett C. C. Yeh
Keyword(s):  
Current Density ◽  
Flip Chip ◽  
Solder Joints ◽  
Density Distributions

Effect of hourglass shape solder joints on underfill encapsulation process: numerical and experimental studies

2020 ◽  
Vol 32 (3) ◽  
pp. 147-156
Author(s):  
Muhammad Naqib Nashrudin ◽  
Zhong Li Gan ◽  
Aizat Abas ◽  
M.H.H. Ishak ◽  
M. Yusuf Tura Ali
Keyword(s):  
Solder Joint ◽  
Numerical Method ◽  
Flip Chip ◽  
Solder Joints ◽  
Experimental Studies ◽  
Three Dimensional ◽  
Cross Sectional ◽  
Content Type ◽  
Filling Time ◽  
Encapsulation Process

Purpose In line with the recent development of flip-chip reliability and underfill process, this paper aims to comprehensively investigate the effect of different hourglass shape solder joint on underfill encapsulation process by mean of experimental and numerical method. Design/methodology/approach Lattice Boltzmann method (LBM) numerical was used for the three-dimensional simulation of underfill process. The effects of ball grid arrays (BGA) encapsulation process in terms of filling time of the fluid were investigated. Experiments were then carried out to validate the simulation results. Findings Hourglass shape solder joint has shown the shortest filling time for underfill process compared to truncated sphere. The underfill flow obtained from both simulation and experimental results are found to be in good agreement for the BGA model studied. The findings have also shown that the filling time of Hourglass 2 with parabolic shape gives faster filling time compared to the Hourglass 1 with hemisphere angle due to bigger cross-sectional area of void between the solder joints. Practical implications This paper provides reliable insights to the effect of hourglass shape BGA on the encapsulation process that will benefit future development of BGA packages. Originality/value LBM numerical method was implemented in this research to study the flow behaviour of an encapsulation process in term of filling time of hourglass shape BGA. To date, no research has been found to simulate the hourglass shape BGA using LBM.

Electromigration Reliability With Respect to Cu Weight Contents of Sn–Ag–Cu Flip-Chip Solder Joints Under Comparatively Low Current Stressing

2008 ◽  
Vol 130 (4) ◽  
Author(s):  
Yi-Shao Lai ◽  
Ying-Ta Chiu
Keyword(s):  
Intermetallic Compound ◽  
Ambient Temperature ◽  
Current Density ◽  
Flip Chip ◽  
Solder Joints ◽  
Average Current Density ◽  
Current Stressing ◽  
Weight Content ◽  
Average Current ◽  
Better Than

This work presents electromigration reliability and patterns of Sn–3Ag–0.5Cu and Sn–3Ag–1.5Cu∕Sn–3Ag–0.5Cu composite flip-chip solder joints with Ti∕Ni(V)∕Cu under bump metallurgy (UBM), bonded on Au∕Ni∕Cu substrate pads. The solder joints were subjected to an average current density of 5kA∕cm2 under an ambient temperature of 150°C. Under the situation when electron charges flow from the UBM toward the substrate, Sn diffuses from the Cu–Ni–Sn intermetallic compound developed around the UBM toward the UBM and eventually causes the Ni(V) layer to deform. Electromigration reliability of Sn–3Ag–1.5Cu∕Sn–3Ag–0.5Cu composite flip-chip solder joints was found to be better than that of Sn–3Ag–0.5Cu solder joints. According to the morphological observations on cross-sectioned solder joints, a failure mechanism is proposed as follows. Since the deformation of the Ni(V) layer as a result of Sn diffusion toward the UBM is considered as the dominant failure, a greater Cu weight content in the solder joints would trap more Sn in the Sn–Cu interfacial reaction and would therefore retard the diffusion of Sn toward the UBM and hence enhance the electromigration reliability.

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