Optical properties of organometal halide perovskite thin films and general device structure design rules for perovskite single and tandem solar cells

Lead halide perovskites are the new rising generation of semiconductor materials due to their unique optical and electrical properties. The investigation of the interaction of halide perovskites and light is a key issue not only for understanding their photophysics but also for practical applications. Hence, tremendous efforts have been devoted to this topic and brunch into two: (i) decomposition of the halide perovskites thin films under light illumination; and (ii) influence of light soaking on their photoluminescence (PL) properties. In this review, we for the first time thoroughly compare the illumination conditions and the sample environment to correlate the PL changes and decomposition of perovskite under light illumination. In the case of vacuum and dry nitrogen, PL of the halide perovskite (MAPbI3–xClx, MAPbBr3–xClx, MAPbI3) thin films decreases due to the defects induced by light illumination, and under high excitations, the thin film even decomposes. In the presence of oxygen or moisture, light induces the PL enhancement of halide perovskite (MAPbI3) thin films at low light illumination, while increasing the excitation, which causes the PL to quench and perovskite thin film to decompose. In the case of mixed halide perovskite ((MA)Pb(BrxI1-x)3) light induces reversible segregation of Br domains and I domains.

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Interaction of light with lead halide perovskites: A review

Characterization and Application of Nanomaterials ◽

10.24294/can.v1i4.813 ◽

2018 ◽

Vol 1 (4) ◽

Author(s):

Zhiya Dang 1 ◽

Duc Anh Dinh 1

Keyword(s):

Thin Film ◽

Thin Films ◽

Light Illumination ◽

Low Light ◽

Practical Applications ◽

Halide Perovskites ◽

Halide Perovskite ◽

First Time ◽

Lead Halide ◽

Sample Environment

Lead halide perovskites are the new rising generation of semiconductor materials due to theirunique optical and electrical properties. The investigation of the interaction of halide perovskites and light is a key issue not only for understanding theirphotophysicsbut also for practical applications. Hence, tremendous efforts have been devoted to this topic andbrunch into two:(i)decompositionof the halide perovskites thin films under light illumination and(ii)influence of light soaking on their photoluminescence (PL) properties. In this review, we for the first time thoroughly compare the illumination conditions and the sample environment to correlate the PL changes and decomposition of perovskite under light illumination. Inthe case of vacuum and dry nitrogen, PL of the halide perovskite ( PbI3–xClx, PbBr3–xClx, MAPbI3) thin films decreases due to the defects induced by light illumination, and under high excitations the thin film even decomposes. In thepresence of oxygen or moisture,light induces the PL enhancement of halide perovskite (MAPbI3) thin films at low light illumination, while increasing the excitationcauses the PL to quench and perovskite thin film to decompose. In the case of mixed halide perovskite (MAPb(BrxI1-x)3) light inducesreversible segregation of Br domains and I domains.

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Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

Chemical Communications ◽

10.1039/c4cc08468c ◽

2015 ◽

Vol 51 (6) ◽

pp. 1143-1146 ◽

Cited By ~ 18

Author(s):

Monika Warzecha ◽

Jesus Calvo-Castro ◽

Alan R. Kennedy ◽

Alisdair N. Macpherson ◽

Kenneth Shankland ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Fluorescence Quenching ◽

Optical Detection ◽

Film Properties ◽

Structural Order ◽

Quenching Efficiency ◽

First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

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Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

Journal of Materials Chemistry C ◽

10.1039/c9tc05823k ◽

2020 ◽

Vol 8 (2) ◽

pp. 536-542 ◽

Cited By ~ 3

Author(s):

Yuanqi Huang ◽

Ang Gao ◽

Daoyou Guo ◽

Xia Lu ◽

Xiao Zhang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetic Moment ◽

Room Temperature ◽

Fe Doping ◽

Saturation Magnetic Moment ◽

First Time

A thermostable Fe-doped γ-Ga2O3 thin film with a high room temperature saturation magnetic moment of 5.73 μB/Fe has been obtained for the first time.

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Organometal halide perovskite thin films and solar cells by vapor deposition

Journal of Materials Chemistry A ◽

10.1039/c5ta08963h ◽

2016 ◽

Vol 4 (18) ◽

pp. 6693-6713 ◽

Cited By ~ 139

Author(s):

Luis K. Ono ◽

Matthew R. Leyden ◽

Shenghao Wang ◽

Yabing Qi

Keyword(s):

Thin Films ◽

Solar Cells ◽

Vapor Deposition ◽

Perovskite Solar Cells ◽

Promising Alternative ◽

Organometal Halide Perovskite ◽

Halide Perovskite

Vapor based methods provide a promising alternative way to fabricate organometal halide perovskite solar cells.

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Effects of alloying on the optical properties of organic–inorganic lead halide perovskite thin films

Journal of Materials Chemistry C ◽

10.1039/c6tc02135b ◽

2016 ◽

Vol 4 (33) ◽

pp. 7775-7782 ◽

Cited By ~ 57

Author(s):

Paul F. Ndione ◽

Zhen Li ◽

Kai Zhu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Spectroscopic Ellipsometry ◽

Optical Constants ◽

Optical Transitions ◽

Inorganic Perovskite ◽

Inorganic Lead ◽

Halide Perovskite ◽

Lead Halide

Spectroscopic ellipsometry analysis of optical transitions and optical constants in hybrid organic–inorganic perovskite alloys.

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A SIMPLE MODEL FOR OBTAINING OPTICAL CONSTANTS OF POROUS SILICON

Modern Physics Letters B ◽

10.1142/s0217984901002440 ◽

2001 ◽

Vol 15 (17n19) ◽

pp. 745-748

Author(s):

JAIME TORRES ◽

JAIRO GIRALDO

Keyword(s):

Thin Film ◽

Thin Films ◽

Simple Model ◽

Porous Silicon ◽

Optical Constants ◽

Normal Incidence ◽

Sample Thickness ◽

Infinite Dimensions ◽

Simple Method ◽

Harmonic Oscillator Model

A simple method is proposed to calculate optical constants from porous silicon (PS) thin films, out of the simulation of normal incidence reflection spectrums. In the optical system used in this model, PS one considers as a homogeneous uniform thin film when deposited upon a substrate with semi-infinite dimensions. The PS and Substrate refractive indexes are obtained using the Simple Harmonic Oscillator Model, proposed by Wemple and DiDomenico. In addition, the absorption coefficient and sample thickness are also be obtained. The model to calculate the optical constants of some samples prepared at different anodisation times is used.

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Extrapolation of critical thickness of GaN thin films from lattice constant data using synchrotron X-ray

MRS Proceedings ◽

10.1557/proc-423-557 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 2

Author(s):

Chinkyo Kim ◽

I. K. Robinson ◽

Jaemin Myoung ◽

Kyuhwan Shim ◽

Kyekyoon Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Critical Thickness ◽

Energy Estimate ◽

Accurate Estimate ◽

X Ray ◽

Lattice Constants ◽

Pseudomorphic Growth ◽

Sudden Transition ◽

First Time

AbstractIn some materials, Van der Merwe's equilibrium theory of strain relief is believed to explain the sudden transition from pseudomorphic growth of a thin film to a progressively relaxed state. We show, for the first time for GaN, how an accurate estimate of the critical thickness of a thin film can be extrapolated from suitable measurements of lattice constants as a function of film thickness using synchrotron X-ray. We do this both for an elementary elastic energy function, in which the interactions between the dislocations are ignored, and for a more realistic energy estimate due to Kasper. The method is found to work quantitatively for thin films of GaN on AIN. The critical thickness is determined to be 29 ± 4 Å.

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Modeling the Optical Quantum Efficiency of Thin Film Amorphous Silicon Solar Cells

MRS Proceedings ◽

10.1557/proc-609-a30.7 ◽

2000 ◽

Vol 609 ◽

Author(s):

Sally-anne F. Rowlands ◽

John Livingstone ◽

Christopher P. Lund

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Amorphous Silicon ◽

Quantum Efficiency ◽

Indium Tin Oxide ◽

Optical Constants ◽

Spectral Response ◽

Good Prediction ◽

Transmission Spectra

ABSTRACTThe optical quantum efficiency and spectral response of p-i-n thin film amorphous silicon (a-Si:H) solar cells have been modeled using software based on optical admittance analysis. The optical constants of a-Si:H and Indium Tin Oxide (ITO) thin film layers have been measured by Variable Angle Spectroscopic Ellipsometry (VASE) and used as inputs into the optical admittance analysis program in order to model cells constructed from these films.Amorphous silicon thin films and p-i-n assemblies have been deposited by glow discharge and reactive sputtering techniques. The optical constants of doped and intrinsic a-Si:H thin films were determined by VASE and the film thickness verified by Scanning Electron Microscopy studies. The optical constants of commercially available transparent conducting oxide (TCO) coated substrates have also been determined by VASE.The experimental transmission spectra of p-i-n assemblies are compared with transmission spectra that have been modeled using the measured optical constants. Results of modeling different a-Si:H solar cell structures using these materials are presented, including a study of the optimal TCO layer thickness for p-i-n a-Si:H solar cells. This work shows that optical admittance modeling gives a good prediction of the optical behavior of p-i-n assemblies, but that accurate measurements of the optical constants of the component films are required in order to model effectively the optical quantum efficiency and photocurrent.

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