Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

Dalton Transactions ◽

10.1039/c6dt03038f ◽

2016 ◽

Vol 45 (43) ◽

pp. 17312-17318 ◽

Cited By ~ 9

Author(s):

Eun-Kyung Kim ◽

Dasom Park ◽

Nabeen K. Shrestha ◽

Jinho Chang ◽

Cheol-Woo Yi ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Aqueous Solution ◽

Ion Exchange ◽

Chemical Transformation ◽

Room Temperature ◽

Film Formation ◽

Synthetic Method ◽

Binder Free ◽

Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

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Detection of nitroaromatic vapours with diketopyrrolopyrrole thin films: exploring the role of structural order and morphology on thin film properties and fluorescence quenching efficiency

Chemical Communications ◽

10.1039/c4cc08468c ◽

2015 ◽

Vol 51 (6) ◽

pp. 1143-1146 ◽

Cited By ~ 18

Author(s):

Monika Warzecha ◽

Jesus Calvo-Castro ◽

Alan R. Kennedy ◽

Alisdair N. Macpherson ◽

Kenneth Shankland ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Fluorescence Quenching ◽

Optical Detection ◽

Film Properties ◽

Structural Order ◽

Quenching Efficiency ◽

First Time

Sensitive optical detection of nitroaromatic vapours with diketopyrrolopyrrole thin films is reported for the first time.

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Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.710.170 ◽

2013 ◽

Vol 710 ◽

pp. 170-173

Author(s):

Lian Ping Chen ◽

Yuan Hong Gao

Keyword(s):

Thin Film ◽

Thin Films ◽

Phase Composition ◽

Room Temperature ◽

Electrochemical Techniques ◽

Luminescent Properties ◽

X Ray Diffraction ◽

Step Method ◽

X Ray ◽

Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

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A tunable volatile organic compound sensor by using PtOx/GQDs/TiO2 nanocomposite thin films at room temperature under visible-light activation

RSC Advances ◽

10.1039/c7ra07478f ◽

2017 ◽

Vol 7 (63) ◽

pp. 39859-39868 ◽

Cited By ~ 3

Author(s):

Shaofeng Shao ◽

Yunyun Chen ◽

Shenbei Huang ◽

Fan Jiang ◽

Yunfei Wang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Visible Light ◽

Gas Sensors ◽

Room Temperature ◽

Light Activation ◽

Nanocomposite Thin Film ◽

Nanocomposite Thin Films ◽

Volatile Organic ◽

Visible Light Activation

Pt/GQDs/TiO2 nanocomposite thin film-based gas sensors show tunable VOC sensing behaviour at room temperature under visible-light activation.

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Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

MRS Proceedings ◽

10.1557/proc-879-z7.17 ◽

2005 ◽

Vol 879 ◽

Author(s):

M. Abid ◽

C. Terrier ◽

J-P Ansermet ◽

K. Hjort

Keyword(s):

Thin Film ◽

Thin Films ◽

Room Temperature ◽

Magnetic Behaviour ◽

Spectroscopic Methods ◽

X Ray Diffraction ◽

X Ray ◽

Doped Zno ◽

Mn Doped ◽

Weak Ferromagnetic

AbstractFollowing the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

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Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films

MRS Proceedings ◽

10.1557/proc-813-h4.3 ◽

2004 ◽

Vol 813 ◽

Author(s):

Galina M. Khlyap ◽

Petro G. Sydorchuk ◽

Jacek Polit

Keyword(s):

Thin Films ◽

Room Temperature ◽

Hydrogen Treatment ◽

Narrow Gap ◽

Glass Substrates ◽

Semiconductor Thin Films ◽

Visible Wavelength Range ◽

Current Voltage ◽

Before And After ◽

First Time

ABSTRACTThe effect of hydrogen treatment on room temperature electric properties of narrow-gap semiconductor thin films ZnxCdyHg1−z−yTe (0 < x < 0.50, 0.20 < y < 0.40) is investigated for the first time. ZnCdHgTe films of 2 – 5 [.proportional]m thickness were grown on glass substrates by pulsed laser deposition technique. As-grown films were thermally treated in the flow of molecular H2 at 200°C during 24 hours. Comparison between electric characteristics measured before and after hydrogenation showed sufficient changes of the film resistance and appearance of photosensitivity in the visible wavelength range. Study of current-voltage characteristics of the films revealed appearance and significant change of diode-like properties.

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Analyzing TEM Images for Accurate Determination of Lattice Parameters of Vacuum Evaporated SnSe Thin Film by Image Processing Software

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1141.51 ◽

2016 ◽

Vol 1141 ◽

pp. 51-53

Author(s):

Chetan Zankat ◽

V.M. Pathak ◽

Pratik Pataniya ◽

G.K. Solanki ◽

K.D. Patel ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Image Processing ◽

Optical Properties ◽

Room Temperature ◽

Accurate Determination ◽

Lattice Parameters ◽

Processing Software ◽

Image Processing Software

Amorphous SnSe thin films were deposited by thermal evaporation technique on glass substrates kept at room temperature in a vacuum better than 10-5Torr. A detailed study of structural and optical properties of 150 nm thin film was carried out. The selected area diffraction patterns obtained by TEM for this thin film were analyzed by a new method that involves accurate determination of lattice parameters by image processing software. The obtained results are in good agreement with the JCPDS data. Optical transmission spectra obtained at room temperature were analyzed to study optical properties of deposited thin films. It has been found that indirect carrier transition is responsible for optical absorption process in the deposited thin films.

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p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.668.681 ◽

2013 ◽

Vol 668 ◽

pp. 681-685

Author(s):

Ya Xue ◽

Hai Ping He ◽

Zhi Zhen Ye

Keyword(s):

Thin Film ◽

Thin Films ◽

Carrier Mobility ◽

Room Temperature ◽

Zno Films ◽

Electrical Measurements ◽

Acceptor Dopant ◽

Znmgo Thin Film ◽

Effect Transistor ◽

P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin ﬁlms. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin ﬁlm is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin ﬁlms still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin ﬁlm made it relatively stable when fabricating LEDs and other optoelectronic devices.

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Extrapolation of critical thickness of GaN thin films from lattice constant data using synchrotron X-ray

MRS Proceedings ◽

10.1557/proc-423-557 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 2

Author(s):

Chinkyo Kim ◽

I. K. Robinson ◽

Jaemin Myoung ◽

Kyuhwan Shim ◽

Kyekyoon Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Critical Thickness ◽

Energy Estimate ◽

Accurate Estimate ◽

X Ray ◽

Lattice Constants ◽

Pseudomorphic Growth ◽

Sudden Transition ◽

First Time

AbstractIn some materials, Van der Merwe's equilibrium theory of strain relief is believed to explain the sudden transition from pseudomorphic growth of a thin film to a progressively relaxed state. We show, for the first time for GaN, how an accurate estimate of the critical thickness of a thin film can be extrapolated from suitable measurements of lattice constants as a function of film thickness using synchrotron X-ray. We do this both for an elementary elastic energy function, in which the interactions between the dislocations are ignored, and for a more realistic energy estimate due to Kasper. The method is found to work quantitatively for thin films of GaN on AIN. The critical thickness is determined to be 29 ± 4 Å.

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