scholarly journals Nucleation-controlled vacancy formation in light-emitting wide-band-gap oxide nanocrystals in glass

2015 ◽  
Vol 3 (17) ◽  
pp. 4380-4387 ◽  
Author(s):  
N. V. Golubev ◽  
E. S. Ignat'eva ◽  
V. N. Sigaev ◽  
L. De Trizio ◽  
A. Azarbod ◽  
...  
Keyword(s):  
Band Gap ◽  
Gallium Oxide ◽  
Wide Band ◽  
Nanocrystal Size ◽  
Vacancy Formation ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Donor Acceptor

Controlling nanocrystal nucleation in a solid host, as in the gallium-oxide nanophase grown in glass, provides a strategy for tailoring not only nanocrystal size but also light-emitting donor–acceptor population.

Mechanism of electroluminescence excitation in forward-biased MS and MIS light-emitting diodes based on wide-band-gap II–VI compounds

1981 ◽  
Vol 64 (2) ◽  
pp. 697-706 ◽  
Author(s):  
N. B. Lukyanchlkova ◽  
T. M. Pavelko ◽  
G. S. Pekar ◽  
N. N. Tkachenko ◽  
M. K. Sheinkman
Keyword(s):  
Band Gap ◽  
Light Emitting Diodes ◽  
Wide Band ◽  
Wide Band Gap ◽  
Light Emitting

scholarly journals Highly Stable and Bright Blue Light-Emitting Diodes Based on Carbon Dots with Chemically Inert Surface

2021 ◽  
Author(s):  
Tianyang Zhang ◽  
Xiao Wang ◽  
Zhenyu Wu ◽  
Tianyu Yang ◽  
Han Zhao ◽  
...  
Keyword(s):  
Band Gap ◽  
Blue Light ◽  
Organic Semiconductors ◽  
Carbon Dots ◽  
Light Emitting Diode ◽  
Wide Band ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Inert Surface ◽  
Bright Blue

Blue light-emitting diode (LED) has always been a tough problem for the display and illumination. Inorganic/organic semiconductors and carbon dots (CDs) with wide band gap still undergo the obstacles of...

scholarly journals A highly efficient wide-band-gap host material for blue electrophosphorescent light-emitting devices

2007 ◽  
Vol 91 (23) ◽  
pp. 233501 ◽  
Author(s):  
Dong Ryeol Whang ◽  
Youngmin You ◽  
Se Hun Kim ◽  
Won-Ik Jeong ◽  
Young-Seo Park ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Host Material ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Highly Efficient

Ambipolar light-emitting organic field-effect transistors using a wide-band-gap blue-emitting small molecule

2007 ◽  
Vol 90 (17) ◽  
pp. 171118 ◽  
Author(s):  
Tomo Sakanoue ◽  
Masayuki Yahiro ◽  
Chihaya Adachi ◽  
Hiroyuki Uchiuzou ◽  
Takayoshi Takahashi ◽  
...  
Keyword(s):  
Band Gap ◽  
Small Molecule ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wide Band ◽  
Organic Field Effect Transistors ◽  
Wide Band Gap ◽  
Light Emitting

Synthesis and characterization of band gap-reduced ZnO:N and ZnO:(Al,N) films for photoelectrochemical water splitting

2010 ◽  
Vol 25 (1) ◽  
pp. 69-75 ◽  
Author(s):  
Sudhakar Shet ◽  
Kwang-Soon Ahn ◽  
Todd Deutsch ◽  
Heli Wang ◽  
Nuggehalli Ravindra ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Potential Method ◽  
Growth Conditions ◽  
Photoelectrochemical Performance ◽  
Wide Band Gap ◽  
N Doping ◽  
Donor Acceptor ◽  
N Incorporation

ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 °C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor–acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.

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