Electronic excitation induced structural, optical and electrical properties of Se85S10Zn5thin films and applicability of a single oscillator model

RSC Advances ◽  
2015 ◽  
Vol 5 (85) ◽  
pp. 69400-69409 ◽  
Author(s):  
Shabir Ahmad ◽  
Mohd. Nasir ◽  
K. Asokan ◽  
Mohd. Shahid Khan ◽  
M. Zulfequar
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Physical Properties ◽  
Electronic Excitation ◽  
Ion Irradiation ◽  
Oscillator Model ◽  
Optical And Electrical Properties ◽  
Single Oscillator Model ◽  
Single Oscillator

The effect of electronic excitation induced by 120 MeV Ag9+ion irradiation on the physical properties of Se85S10Zn5thin films has been investigated at various ion fluencies.

Tuning the optical and electrical properties of magnetron-sputtered Cu–ZnO thin films using low energy Ar ion irradiation

2021 ◽  
Vol 114 ◽  
pp. 110985
Author(s):  
S.K. Singh ◽  
Puneeta Tripathi ◽  
I. Sulania ◽  
V.V. Siva Kumar ◽  
Pravin Kumar
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ion Irradiation ◽  
Low Energy ◽  
Zno Thin Films ◽  
Optical And Electrical Properties

Single oscillator model of undoped and co-doped ZnO thin films

Optik ◽  
2017 ◽  
Vol 139 ◽  
pp. 217-221 ◽  
Author(s):  
P. Petkova ◽  
L. Nedelchev ◽  
D. Nazarova ◽  
K. Boubaker ◽  
R. Mimouni ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Oscillator Model ◽  
Single Oscillator Model ◽  
Single Oscillator ◽  
Doped Zno ◽  
Co Doped

scholarly journals Influence of Bath Temperature and Deposition Time on Topographical and Optical Properties of Nanoparticles ZnS Thin Films Synthesized by a Chemical Bath Deposition Method

2019 ◽  
Vol 2019 ◽  
pp. 1-13 ◽  
Author(s):  
Raghad Zein ◽  
Ibrahim Alghoraibi
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
Bath Temperature ◽  
Oscillator Model ◽  
Homogeneous Distribution ◽  
Dispersion Energy ◽  
Single Oscillator Model ◽  
Single Oscillator

In this paper, zinc sulfide nanoparticle (ZnS-NP) thin films were deposited onto glass substrates by chemical bath deposition using zinc sulfate as the cation precursor and thiourea as the anionic precursor. Different bath temperatures (65, 70, 75, and 80°C) and different deposition times (20, 30, 40, and 50 min) were selected to study the performance of ZnS thin films. Topographical and optical characterizations of the films were studied using the atomic force microscope (AFM) and UV-Vis spectroscope. The best ZnS thin films were deposited at a bath temperature (70°C) and a deposition time (30 min) with homogeneous distribution, high density, and small average diameter (106 nm). The energy gap (Eg) was found to be in the range of 4.05-3.97 eV for the ZnS films. Optical constants (refractive index, n, extinction coefficient, k, and dielectric constant, ε) of the films were obtained in the wavelength range 300-500 nm by using spectrophotometric measurement. The dispersion of the refractive index is analyzed by using a single oscillator model. The oscillator energy E0 and dispersion energy Ed were determined using the Wemple-DiDomenico single oscillator model. Urbach’s energy increases from 0.907 eV to 2.422 eV with increasing of deposition time. The calculated radius of nanoparticles using Brus equation was 1.9, 2.3, 2.45, and 2.51 nm at deposition times 20, 30, 40, and 50 min, respectively.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

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