Control of verticality and (111) orientation of In-catalyzed silicon nanowires grown in the vapour–liquid–solid mode for nanoscale device applications

Stacking fault free and planar defects (twin plane) free catalyzed Si nanowires (Si NWs) is essential for the carrier transport in the nanoscale devices applications. In this chapter, In-catalyzed, vertically aligned and cone-shaped Si NWs arrays were grown by using vapor–liquid–solid (VLS) mode on Si (111) substrates. We have successfully controlled the verticality and (111)-orientation of Si NWs as well as scaled down the diameter to 18 nm. The density of Si NWs was also enhanced from 2.5 μm−2 to 70 μm−2. Such vertically aligned, (111)-oriented p-type Si NWs are very important for the nanoscale device applications including Si NWs/c-Si tandem solar cells and p-Si NWs/n-InGaZnO Heterojunction LEDs. Next, the influence of substrate growth temperature (TS), cooling rate (∆TS/∆𝑡) on the formation of planar defects, twining along [112] direction and stacking fault in Si NWs perpendicular to (111)-orientation were deeply investigated. Finally, one simple model was proposed to explain the formation of stacking fault, twining of planar defects in perpendicular direction to the axial growth direction of Si NWs. When the TS was decreased from 600°C with the cooling rate of 100°C/240 sec to room temperature (RT) after Si NWs growth then the twin planar defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed.

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Formation of Ordered Si Nanowires Arrays on Si Substrate

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.854.83 ◽

2013 ◽

Vol 854 ◽

pp. 83-88 ◽

Cited By ~ 3

Author(s):

A.A. Evtukh ◽

Anatoly Druzhinin ◽

I. Ostrovskii ◽

A. Kizjak ◽

A. Grigoriev ◽

...

Keyword(s):

Silicon Nanowires ◽

Kinetic Coefficient ◽

Average Diameter ◽

Si Nanowires ◽

Si Substrate ◽

Cvd Method ◽

Good Accordance ◽

Vertically Aligned ◽

Kinetics Of ◽

Axial Growth

The paper deals with investigation of silicon nanowires formation by LP CVD method on Si substrate using gold films as a mask. The average diameter of Si nanowires grown by LP CVD was about 60 nm. It was shown that using of Si-Au droplets as the mask allows to obtain vertically aligned silicon nanowires with average diameter of about 60 nm. The kinetics of radial and axial growth was investigated, the growth rates and kinetic coefficient of growth were calculated, which showed a good accordance to experimental data.

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Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate

Applied Physics Express ◽

10.1143/apex.1.064003 ◽

2008 ◽

Vol 1 ◽

pp. 064003 ◽

Cited By ~ 26

Author(s):

Guoqiang Zhang ◽

Kouta Tateno ◽

Tetsuomi Sogawa ◽

Hidetoshi Nakano

Keyword(s):

Si Substrate ◽

Vertically Aligned

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Ordered Arrays of Vertically Aligned [110] Silicon Nanowires by Suppressing the Crystallographically Preferred Etching Directions

Nano Letters ◽

10.1021/nl803558n ◽

2009 ◽

Vol 9 (7) ◽

pp. 2519-2525 ◽

Cited By ~ 141

Author(s):

Zhipeng Huang ◽

Tomohiro Shimizu ◽

Stephan Senz ◽

Zhang Zhang ◽

Xuanxiong Zhang ◽

...

Keyword(s):

Silicon Nanowires ◽

Ordered Arrays ◽

Vertically Aligned

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Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

Journal of Materials Chemistry ◽

10.1039/c1jm12921j ◽

2011 ◽

Vol 21 (43) ◽

pp. 17242 ◽

Cited By ~ 30

Author(s):

H. Fukidome ◽

R. Takahashi ◽

S. Abe ◽

K. Imaizumi ◽

H. Handa ◽

...

Keyword(s):

Crystallographic Orientation ◽

Si Substrate ◽

Device Applications

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Decisive role of dopants in the optical properties of vertically aligned silicon nanowires prepared by metal-assist chemical etching

Optical Materials ◽

10.1016/j.optmat.2021.111632 ◽

2021 ◽

Vol 121 ◽

pp. 111632

Author(s):

Le Thanh Cong ◽

Nguyen Thi Ngoc Lam ◽

Doan Van Thuong ◽

Ngo Ngoc Ha ◽

Nguyen Duc Dung ◽

...

Keyword(s):

Optical Properties ◽

Silicon Nanowires ◽

Chemical Etching ◽

Decisive Role ◽

Vertically Aligned

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Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

RSC Advances ◽

10.1039/c5ra00210a ◽

2015 ◽

Vol 5 (21) ◽

pp. 15795-15799 ◽

Cited By ~ 38

Author(s):

Qi Fu ◽

Wenhui Wang ◽

Lei Yang ◽

Jian Huang ◽

Jingyu Zhang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Tungsten Disulfide ◽

Controllable Synthesis ◽

Si Substrate ◽

High Quality ◽

Device Applications ◽

Direct Band

Tungsten disulfide (WS2), with its transformation from indirect to direct band transitions when scaled down to a monolayer, exhibits great potential for future micro-device applications.

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