Evaluation of New Aminoalkoxide Precursors for Atomic Layer Deposition. Growth of Zirconium Dioxide Thin Films and Reaction Mechanism Studies

2004 ◽  
Vol 16 (26) ◽  
pp. 5630-5636 ◽  
Author(s):  
Raija Matero ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
Timo Sajavaara ◽  
Anthony C. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Zirconium Dioxide ◽  
Atomic Layer ◽  
Layer Deposition

Reaction Mechanism Underlying Atomic Layer Deposition of Antimony Telluride Thin Films

2016 ◽  
Vol 16 (5) ◽  
pp. 4924-4928 ◽  
Author(s):  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jae-Min Park ◽  
Luchana L Yusup ◽  
Hana Ishii ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Antimony Telluride ◽  
Layer Deposition

scholarly journals Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 136 ◽  
Author(s):  
Zhigang Xiao ◽  
Kim Kisslinger ◽  
Sam Chance ◽  
Samuel Banks
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Zirconium Dioxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Hafnium Dioxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
X Ray ◽  
Layer Deposition

We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH3)2]4) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH3)2]4) were used as the precursors, while O2 gas was used as the reactive gas. The PE-ALD-grown HfO2 and ZrO2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO2 film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO2 film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO2 and ZrO2 films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO2 and ZrO2 thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO2 and ZrO2 thin films were compared.

Reaction Mechanism for Atomic Layer Deposition of Germanium Ditelluride Thin Films

2017 ◽  
Vol 17 (5) ◽  
pp. 3472-3476 ◽  
Author(s):  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jae-Min Park ◽  
Luchana L Yusup ◽  
Jeeyoon Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Atomic layer deposition of transparent semiconducting oxide CuCrO2 thin films

2015 ◽  
Vol 3 (32) ◽  
pp. 8364-8371 ◽  
Author(s):  
T. S. Tripathi ◽  
Janne-Petteri Niemelä ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Gas Phase ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Atomic Level ◽  
High Quality ◽  
Layer Deposition ◽  
Controlled Deposition

Atomic layer deposition (ALD) is a vital gas-phase technique for atomic-level thickness-controlled deposition of high-quality thin films of CuCrO2 on various substrate morphologies owing to its self-limiting gas-surface reaction mechanism.

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Reaction Mechanism of Atomic Layer Deposition of Aluminum Sulfide using Trimethylaluminum and Hydrogen Sulfide

2021 ◽  
Author(s):  
Yanghong Yu ◽  
Zhongchao Zhou ◽  
Lina Xu ◽  
Yihong Ding ◽  
Guoyong Fang
Keyword(s):  
Hydrogen Sulfide ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Sulfides ◽  
Layer Deposition

Atomic layer deposition (ALD) is a nanopreparation technique for materials and is widely used in the fields of microelectronics, energy and catalysis. ALD methods for metal sulfides, such as Al2S3...

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