A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride
2016 ◽
Vol 4
(4)
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pp. 863-871
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Keyword(s):
Carbon doping during CVD of GaN semiconductor materials is modeled using ab initio quantum chemical calculations and computational fluid dynamics.
1999 ◽
Vol 146
(5)
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pp. 1780-1788
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1999 ◽
Vol 17
(4)
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pp. 1352-1355
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1994 ◽
Vol 12
(4)
◽
pp. 2752
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2013 ◽
Vol 2
(11)
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pp. P457-P464
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2002 ◽
Vol 36
(4)
◽
pp. 105-142
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