Computational Fluid Dynamics in the Carbon Nanotubes Synthesis by Chemical Vapor Deposition

2012 ◽  
Vol 1479 ◽  
pp. 111-116 ◽  
Author(s):  
Alejandro Gómez Sánchez ◽  
Lada Domratcheva Lvova ◽  
Víctor López Garza ◽  
Ramón Román Doval ◽  
María de Lourdes Mondragón Sánchez
Keyword(s):  
Fluid Dynamics ◽  
Carbon Nanotubes ◽  
Computational Fluid Dynamics ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Carrier Gas ◽  
Deposition Patterns ◽  
Carrier Gas Flow

ABSTRACTIn this paper, an experimental study aimed at achieving better control of the deposition patterns of carbon nanotubes (CNTs) is presented. CNTs were grown on a long of reactor by the catalytic chemical vapor deposition (CVD) of a benzene/ferrocene solution at 1073 K. The deposition patterns on the substrate were controlled for process times and carrier gas flow rates. In order to investigate the reaction mechanism and production rate for the growth of CNTs in catalyst CVD, computational fluid dynamics (CFD) model was developed in this study. Then the computational model was integrated with the dynamic model to optimize the process parameters formulating a correlation between turbulence, deposition rate for the growth of carbon nanotubes and parameters as process time and carrier gas flow rate. Scanning electron microscopes (SEM) are used to characterize carbon nanotubes products.

The Influence of Temperature and Carrier Gas Flow in the Obtainment of Carbon Nanotubes by Chemical Vapor Deposition

2014 ◽  
Vol 976 ◽  
pp. 169-173
Author(s):  
Alejandro Gómez Sánchez ◽  
Lada Domratcheva Lvova ◽  
Victor López Garza ◽  
Leandro García González ◽  
Pedro González García ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Carrier Gas ◽  
Synthesis Conditions ◽  
Xrd Diffraction ◽  
Carrier Gas Flow

The objective of this study was to evaluate the influence of the synthesis conditions on the characteristics of carbon nanotubes (CNTs), to optimize the process parameters in the growth of CNTs. The CNTs were obtained by Chemical Vapor Deposition (CVD) at 800, 850 and 900 °C and carrier gas flow of 50, 80 and 110 ml/min from ferrocene and benzene during 1 h. The CNTs obtained were analyzed with a field emission scanning electron microscope (FESEM) JSM-7600F. The degrees of crystallinity of the samples were obtained through X-ray diffraction (XRD). The lengths of the CNTs were 3-120 microns and average diameters were 29-72 nm. The highest yields of CNTs were obtained with a flow rate of 80 ml/min and temperature of 850 °C. The diagrams illustrate XRD diffraction peaks corresponding to crystalline phases of graphite, Fe α and cementite (Fe3C). The average CNTs walls were calculated with the Scherrer equation. The CNTs obtained with 50 ml/min carrier flow present an average of 40-42 walls, 80 ml/min-of 33-39 walls and 110 ml/min of 30-34 walls. These facts allow suppose that with a greater flow decreases the number of walls.

Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition

Nano Research ◽  
2016 ◽  
Vol 10 (2) ◽  
pp. 643-651 ◽  
Author(s):  
Hengchang Liu ◽  
Yuanhu Zhu ◽  
Qinglong Meng ◽  
Xiaowei Lu ◽  
Shuang Kong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Monolayer Mos2 ◽  
Gas Flow Rate ◽  
Carrier Gas ◽  
Carrier Gas Flow

Effect of Carrier Gas Flow Rate on In2O3 Nanostructure Morphology and Growth Mechanism

2015 ◽  
Vol 31 ◽  
pp. 117-128 ◽  
Author(s):  
Li Zhang ◽  
Huan Xia ◽  
Chen Qiu ◽  
Jian Jun Jiang ◽  
Shao Wei Bie
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Gas Flow Rate ◽  
Carrier Gas ◽  
Carrier Gas Flow

The effect of carrier gas flow rate on the morphologies of In2O3 nanostructures was studied in a horizontal tube furnace via chemical vapor deposition method. Under low carrier gas flow rate, there appeared randomly oriented nanorods on the substrate, while the high carrier gas flow rate resulted in the nanocubes growth. The insufficient understanding of the role of the argon carrier gas flow rate motivated us to systematically research the transportation of the grown species during the growth processes and its effect on the nanostructure growth. COMSOL simulations were applied to evaluate the distribution of the growth species in the reactor versus the carrier gas flow rate, based on the geometry of our chemical vapor deposition system and a variety of actual growth conditions. The vapor species partial along with different carrier gas rate could cause the different super saturation condition, which is mainly to be responsible for the structural transformation. A combined VLS–VS mechanism was proposed to describe the growth of the Au-catalyzed In2O3 nanorods, while the nanocubes were governed by catalyst free VS growth mechanism.

Surface Morphology Studies of Carbon Nanotubes Prepared by Thermal Chemical Vapor Deposition Using Fermented Tapioca as a Starting Material

2013 ◽  
Vol 667 ◽  
pp. 411-414
Author(s):  
S. Aishah ◽  
M.Z. Nuraini ◽  
S.F. Nik ◽  
Mohamad Rusop
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Silicon Wafer ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Starting Material ◽  
Thermal Chemical Vapor Deposition

Carbon nanotubes (CNTs) were deposited on silicon wafer (Si) by Thermal Chemical Vapor Deposition (TCVD). The new starting material of fermented tapioca was used as carbon source. The gas flow of Argon (Ar) was constant at 70 bubbles per minute and 20 minutes of deposition time. Before the deposition process, the silicon wafer was coated with Nickel catalyst using spin coater. Various parameters such as vaporization temperature and deposition temperature have been studied. Surface morphology and uniformity were characterized using FESEM. The CNTs were structurally characterized using FESEM at different magnification to see the differences of CNTs growth at different temperature of the starting material. The surface morphology and uniformity of CNTs were dependent to parameters.

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