Large area, phase-controlled growth of few-layer, two-dimensional MoTe2and lateral 1T′–2H heterostructures by chemical vapor deposition

CrystEngComm ◽  
2017 ◽  
Vol 19 (7) ◽  
pp. 1045-1051 ◽  
Author(s):  
Shuai Cheng ◽  
Li Yang ◽  
Jie Li ◽  
Zhixuan Liu ◽  
Wenfeng Zhang ◽  
...  
1999 ◽  
Vol 27 (5) ◽  
pp. 1317-1328 ◽  
Author(s):  
J.L. Giuliani ◽  
V.A. Shamamian ◽  
R.E. Thomas ◽  
J.P. Apruzese ◽  
M. Mulbrandon ◽  
...  

2017 ◽  
Vol 28 (46) ◽  
pp. 465103 ◽  
Author(s):  
Jeong-Gyu Song ◽  
Gyeong Hee Ryu ◽  
Youngjun Kim ◽  
Whang Je Woo ◽  
Kyung Yong Ko ◽  
...  

Nanoscale ◽  
2022 ◽  
Author(s):  
Qian Cai ◽  
Qiankun Ju ◽  
Wenting Hong ◽  
Chuanyong Jian ◽  
Taikun Wang ◽  
...  

Herein, we demonstrate a chemical vapor deposition route to controlled growth of large scale MoS2/MoSe2 vertical van der Waals heterostructures on molten glass substrate using water as the oxidizing chemical...


CrystEngComm ◽  
2019 ◽  
Vol 21 (37) ◽  
pp. 5586-5594 ◽  
Author(s):  
Xu Yu ◽  
Xiaokun Wen ◽  
Wenfeng Zhang ◽  
Li Yang ◽  
Hao Wu ◽  
...  

We first demonstrated ZrTe3 nanoribbons can be grown directly by chemical vapor deposition method, which exhibit intriguing magnetic properties.


2D Materials ◽  
2020 ◽  
Vol 8 (1) ◽  
pp. 011002
Author(s):  
Daniel J Gillard ◽  
Armando Genco ◽  
Seongjoon Ahn ◽  
Thomas P Lyons ◽  
Kyung Yeol Ma ◽  
...  

2007 ◽  
Vol 51 (96) ◽  
pp. 303 ◽  
Author(s):  
Sam-Dong LEE ◽  
Hyun-Kyu PARK ◽  
Sang-Woo KIM ◽  
Nae-Man PARK ◽  
Sang-Hyeob KIM ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Hui Yan ◽  
Tong Yu ◽  
Heng Li ◽  
Zhuocheng Li ◽  
Haitao Tang ◽  
...  

Two dimensional (2D) MoSe2 with layered structure has attracted extensive research due to its excellent electronic and optical properties. Controlled synthesis of large-scale and high-quality MoSe2 is highly desirable but...


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.


2021 ◽  
Vol 54 (4) ◽  
pp. 1011-1022
Author(s):  
Kongyang Yi ◽  
Donghua Liu ◽  
Xiaosong Chen ◽  
Jun Yang ◽  
Dapeng Wei ◽  
...  

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  

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