Enhanced electrical properties and field emission characteristics of AZO/ZnO-nanowire core–shell structures

The electrical properties and field-emission characteristics of AZO/ZnO nanowires fabricated using a novel method of atomic layer deposition were systematically investigated.

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CNT/TiO2 core-shell structures prepared by atomic layer deposition and characterization of their photocatalytic properties

Thin Solid Films ◽

10.1016/j.tsf.2016.08.003 ◽

2016 ◽

Vol 616 ◽

pp. 151-159 ◽

Cited By ~ 13

Author(s):

Sheng-Hsin Huang ◽

Chih-Chieh Wang ◽

Shih-Yun Liao ◽

Jon-Yiew Gan ◽

Tsong-Pyng Perng

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Shell Structures ◽

Photocatalytic Properties ◽

Core Shell ◽

Layer Deposition

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A novel approach for fabrication of bismuth-silicon dioxide core-shell structures by atomic layer deposition

Journal of Materials Chemistry ◽

10.1039/b908615c ◽

2009 ◽

Vol 19 (38) ◽

pp. 7050 ◽

Cited By ~ 22

Author(s):

Jongmin Lee ◽

Shadyar Farhangfar ◽

Renbin Yang ◽

Roland Scholz ◽

Marin Alexe ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Silicon Dioxide ◽

Atomic Layer ◽

Shell Structures ◽

Core Shell ◽

Novel Approach ◽

Layer Deposition

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Atomic layer deposition with rotary reactor for uniform hetero-junction photocatalyst, g-C3N4@TiO2 core–shell structures

RSC Advances ◽

10.1039/c9ra05958j ◽

2019 ◽

Vol 9 (57) ◽

pp. 33180-33186 ◽

Cited By ~ 9

Author(s):

Eunyong Jang ◽

Won Jun Kim ◽

Dae Woong Kim ◽

Seong Hwan Hong ◽

Ijaz Ali ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Shell Structures ◽

Core Shell ◽

Mechanical Dispersion ◽

Layer Deposition ◽

Rotary Reactor

A heterojunction of TiO2 grown on g-C3N4 particles is demonstrated using atomic layer deposition (ALD), equipped with a specifically designed rotary reactor for maintaining stable mechanical dispersion of g-C3N4 particles during ALD.

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One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

10.26434/chemrxiv.9199796 ◽

2019 ◽

Author(s):

Jiajia Tao ◽

Hong-Ping Ma ◽

Kaiping Yuan ◽

Yang Gu ◽

Jianwei Lian ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Band Gap ◽

Water Splitting ◽

Atomic Layer ◽

Photoelectrochemical Water Splitting ◽

Core Shell ◽

Photoelectrochemical Performance ◽

Highly Efficient ◽

Layer Deposition ◽

Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

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Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽

10.3390/coatings10070692 ◽

2020 ◽

Vol 10 (7) ◽

pp. 692

Author(s):

Jong Hyeon Won ◽

Seong Ho Han ◽

Bo Keun Park ◽

Taek-Mo Chung ◽

Jeong Hwan Han

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Carrier Concentration ◽

High Mobility ◽

Impurity Scattering ◽

Atomic Layer ◽

Growth Behavior ◽

Layer Deposition ◽

Growth Feature ◽

O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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