Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (108) ◽  
pp. 106374-106379 ◽  
Author(s):  
Po-Tsun Liu ◽  
Chih-Hsiang Chang ◽  
Chur-Shyang Fuh
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Chemical Vapor Deposited ◽  
Passivation Layers ◽  
Zinc Tin Oxide

The influence of a backchannel passivation layer on the ambient stability of amorphous indium-zinc-tin-oxide thin-film transistors was studied. The ALD Al2O3 films and plasma-enhanced chemical vapor deposited SiO2 films were separately used as channel passivation layers.

Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc–Tin Oxide Thin-Film Transistors

2014 ◽  
Vol 44 (2) ◽  
pp. 651-657 ◽  
Author(s):  
Dong-Suk Han ◽  
Jae-Hyung Park ◽  
Min-Soo Kang ◽  
So-Ra Shin ◽  
Yeon-Jae Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors

2018 ◽  
Vol 4 (7) ◽  
pp. 1800032 ◽  
Author(s):  
Cristina Fernandes ◽  
Ana Santa ◽  
Ângelo Santos ◽  
Pydi Bahubalindruni ◽  
Jonas Deuermeier ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide

Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

2017 ◽  
Vol 13 (5) ◽  
pp. 406-411 ◽  
Author(s):  
Sang Tae Kim ◽  
Yeonwoo Shin ◽  
Pil Sang Yun ◽  
Jong Uk Bae ◽  
In Jae Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide ◽  
High Carrier Mobility ◽  
High Carrier

Solution-Processed Oxide Thin Film Transistors with Indium Zinc Tin Oxide Semiconductor: Nitrogen Effect

2019 ◽  
Vol 33 (5) ◽  
pp. 295-299 ◽  
Author(s):  
Bong-Jin Kim ◽  
Hyung-Jun Kim ◽  
Sung Mok Jung ◽  
Tae-Sik Yoon ◽  
Yong-Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Nitrogen Effect ◽  
Zinc Tin Oxide

Stability characteristics of gallium-doped zinc-tin-oxide thin-film transistors fabricated using a sol-gel method

2013 ◽  
Vol 62 (8) ◽  
pp. 1176-1182 ◽  
Author(s):  
Jong Hoon Lee ◽  
Chang Hoi Kim ◽  
Hong Seung Kim ◽  
Jae Hoon Park ◽  
Jin Hwa Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Zinc Tin Oxide

Improvement in the Bias Stability of Zinc-Tin Oxide Thin-Film Transistors by Hafnium Doping

2013 ◽  
Vol 42 (8) ◽  
pp. 2470-2477 ◽  
Author(s):  
Dong-Suk Han ◽  
Jae-Hyung Park ◽  
Yu-Jin Kang ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Bias Stability ◽  
Zinc Tin Oxide
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