Polyimide complexes with high dielectric performance: toward polymer film capacitor applications

2016 ◽  
Vol 4 (27) ◽  
pp. 6452-6456 ◽  
Author(s):  
Xinwen Peng ◽  
Wenhui Xu ◽  
Linlin Chen ◽  
Yichun Ding ◽  
Shuiliang Chen ◽  
...  

Novel polyimide–copper complexes (PICuCs) were prepared by polymerization, complexation and imidization of a newly synthesized bipyridine-containing diamine monomer. They showed high dielectric performance, and excellent mechanical and thermal properties.

2016 ◽  
Vol 106 ◽  
pp. 93-98 ◽  
Author(s):  
Xinwen Peng ◽  
Wenhui Xu ◽  
Linlin Chen ◽  
Yichun Ding ◽  
Tianrou Xiong ◽  
...  

e-Polymers ◽  
2020 ◽  
Vol 20 (1) ◽  
pp. 226-232 ◽  
Author(s):  
Peng Li ◽  
Jiajun Yu ◽  
Shaohua Jiang ◽  
Hong Fang ◽  
Kunming Liu ◽  
...  

AbstractAll-organic high dielectric materials are highly required in the field of modern electronic industry and energy storage. In this work, all-organic polyimide/polysulfone composite films with different amounts of PSF (PI/PSF-X) were prepared by in situ polymerization followed by film casting and thermal treatment. The dielectric, mechanical and thermal properties of these PI/PSF-X composite films are characterized by dielectric measurement, tensile test, thermogravimetric analysis and dynamic mechanical analysis. The results suggest that the PI/PSF-X composite films have good dielectric properties, good mechanical properties and excellent thermal properties, which are suitable for applications in electronic devices in harsh environments, especially in high-temperature environments.


Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.


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