Spatial variation of lattice plane bending of 4H-SiC substrates

CrystEngComm ◽  
2017 ◽  
Vol 19 (27) ◽  
pp. 3844-3849 ◽  
Author(s):  
Yingxin Cui ◽  
Xiaobo Hu ◽  
Xuejian Xie ◽  
Rongkun Wang ◽  
Xiangang Xu
Keyword(s):  
High Resolution ◽  
Spatial Variation ◽  
Basal Plane ◽  
Lattice Plane ◽  
X Ray ◽  
Plane Bending

Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution X-ray diffractometry (HRXRD).

Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

CrystEngComm ◽  
2018 ◽  
Vol 20 (43) ◽  
pp. 6957-6962 ◽  
Author(s):  
Xianglong Yang ◽  
Jinying Yu ◽  
Xiufang Chen ◽  
Yan Peng ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystals ◽  
Basal Plane ◽  
X Ray ◽  
Sublimation Method ◽  
Plane Bending

Basal plane bending of 4H-SiC single crystals grown using the sublimation method on an open or closed backside seed was measured using high-resolution X-ray diffractometry.

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

2020 ◽  
Vol 1004 ◽  
pp. 393-400
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Gilyong Chung ◽  
...  
Keyword(s):  
Basal Plane ◽  
Local Strain ◽  
Grazing Incidence ◽  
Peak Shift ◽  
Linear Mapping ◽  
Incidence Geometry ◽  
Convex Shape ◽  
X Ray ◽  
Black And White ◽  
Plane Bending

Synchrotron monochromatic beam X-ray topography (SMBXT) in grazing incidence geometry shows black and white contrast for basal plane dislocations (BPDs) with Burgers vectors of opposite signs as demonstrated using ray tracing simulations. The inhomogeneous distribution of these dislocations is associated with the concave/convex shape of the basal plane. Therefore, the distribution of these two BPD types were examined for several 6-inch diameter 4H-SiC substrates and the net BPD density distribution was used for evaluating the nature and magnitude of basal plane bending in these wafers. Results show different bending behaviors along the two radial directions - [110] and [100] directions, indicating the existence of non-isotropic bending. Linear mapping of the peak shift of the 0008 reflection along the two directions was carried out using HRXRD to correlate with the results from the SMBXT measurements. Basal-plane-tilt angle calculated using the net BPD density derived from SMBXT shows a good correlation with those obtained from HRXRD measurements, which further confirmed that bending in basal plane is caused by the non-uniform distribution of BPDs. Regions of severe bending were found to be associated with both large tilt angles (95% black contrast BPDs to 5% white contrast BPDs) and abrupt changes in a and c lattice parameters i.e. local strain.

scholarly journals Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography

CrystEngComm ◽  
2019 ◽  
Vol 21 (14) ◽  
pp. 2281-2285
Author(s):  
Jaemyung Kim ◽  
Okkyun Seo ◽  
Chulho Song ◽  
Satoshi Hiroi ◽  
Yanna Chen ◽  
...  
Keyword(s):  
Lattice Plane ◽  
X Ray Diffraction ◽  
Bending Angle ◽  
X Ray ◽  
Angle Modulation ◽  
Plane Bending ◽  
Homoepitaxial Layers ◽  
Mg Doped

We have studied the lattice-plane modulation of Mg-doped GaN homoepitaxial layers by X-ray diffraction topography.

X-ray diffraction with a Bragg angle near π/2 and its applications

1998 ◽  
Vol 5 (3) ◽  
pp. 670-672 ◽  
Author(s):  
S. Kikuta ◽  
Y. Imai ◽  
T. Iizuka ◽  
Y. Yoda ◽  
X.-W. Zhang ◽  
...  
Keyword(s):  
High Resolution ◽  
Diffraction Pattern ◽  
Thin Plate ◽  
Bragg Angle ◽  
Lattice Plane ◽  
X Ray Diffraction ◽  
X Ray ◽  
Face To Face ◽  
Very High ◽  
Diffraction Condition

X-ray dynamical diffraction phenomena at a Bragg angle near π/2 are studied. The X-ray transmissivity as well as the reflectivity from the (991) lattice plane of a silicon thin plate is observed. It agrees fairly well with the diffraction pattern calculated on the basis of the Darwin approach. The possibility is discussed whether a set of two crystal plates arranged face to face, in which the diffraction condition with a Bragg angle near π/2 is satisfied, may be used as a very high resolution monochromator.

Investigation of lattice plane bending in large (0001)SiC crystals using high-energy X-ray technique

2005 ◽  
Vol 2 (4) ◽  
pp. 1288-1291 ◽  
Author(s):  
B. M. Epelbaum ◽  
Z. G. Herro ◽  
M. Bickermann ◽  
C. Seitz ◽  
A. Magerl ◽  
...  
Keyword(s):  
High Energy ◽  
Lattice Plane ◽  
X Ray ◽  
Plane Bending

Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography

2009 ◽  
Vol 42 (6) ◽  
pp. 1068-1072 ◽  
Author(s):  
Lina Ning ◽  
Xiaobo Hu ◽  
Yingmin Wang ◽  
Xiangang Xu ◽  
Yuqiang Gao ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystals ◽  
Basal Plane ◽  
Synchrotron Radiation Beam ◽  
Radiation Beam ◽  
X Ray ◽  
Plane Bending ◽  
Spherical Curvature ◽  
Good Agreement

Basal plane bending is a structural defect in SiC single crystals caused mainly by the thermal mismatch between seed and holder, which deteriorates the quality of the wafers and blocks their applications. In this paper, basal plane bending was detected by high-resolution X-ray diffractometry (HRXRD) and transmission synchrotron white-beam X-ray topography (SWBXT). HRXRD reveals that the (0001) Si face is a concave sphere and SWBXT shows that the shapes of the Laue spots are different from that of the cross section of the synchrotron radiation beam. On the basis of a spherical curvature model for a (0001) 6H-SiC single crystal, the shapes of the Laue spots were simulated. The results are in good agreement with the experimental observations. Thus, SWBXT is an effective method for detecting basal plane bending.

Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction

2010 ◽  
Vol 645-648 ◽  
pp. 29-32 ◽  
Author(s):  
Rainer Hock ◽  
Katja Konias ◽  
L. Perdicaro ◽  
Andreas Magerl ◽  
Philip Hens ◽  
...  
Keyword(s):  
Growth Process ◽  
Growth Front ◽  
High Energy ◽  
Lattice Plane ◽  
X Ray Diffraction ◽  
Thermally Induced ◽  
X Ray ◽  
Bulk Growth ◽  
Plane Bending

We have investigated thermally induced strain in the SiC crystal lattice during physical vapor transport bulk growth. Using high energy x-ray diffraction lattice plane bending was observed in-situ during growth. With increasing growth rate increasing lattice plane bending and, hence, strain was observed. A comparison with numerical modeling of the growth process shows that the latter is related to the heat of crystallization which needs to be dissipated from the crystal growth front. The related temperature gradient as driving force for the dissipation of the heat of crystallization causes lattice plane bending. Optimization of the growth process needs to consider such effects.

Electron microscopy of rabbit FC crystals

1983 ◽  
Vol 41 ◽  
pp. 730-731
Author(s):  
Robert A. Grant ◽  
Laura L. Degn ◽  
Wah Chiu ◽  
John Robinson
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Molecular Replacement ◽  
X Ray ◽  
X Ray Crystallography ◽  
Resolution Electron ◽  
Replacement Technique ◽  
Hydrated Crystal ◽  
Molecular Structure Analysis

Proteolytic digestion of the immunoglobulin IgG with papain cleaves the molecule into an antigen binding fragment, Fab, and a compliment binding fragment, Fc. Structures of intact immunoglobulin, Fab and Fc from various sources have been solved by X-ray crystallography. Rabbit Fc can be crystallized as thin platelets suitable for high resolution electron microscopy. The structure of rabbit Fc can be expected to be similar to the known structure of human Fc, making it an ideal specimen for comparing the X-ray and electron crystallographic techniques and for the application of the molecular replacement technique to electron crystallography. Thin protein crystals embedded in ice diffract to high resolution. A low resolution image of a frozen, hydrated crystal can be expected to have a better contrast than a glucose embedded crystal due to the larger density difference between protein and ice compared to protein and glucose. For these reasons we are using an ice embedding technique to prepare the rabbit Fc crystals for molecular structure analysis by electron microscopy.

High Resolution Study of Polytypism: Application to SiC and Au3 Mn

1982 ◽  
Vol 40 ◽  
pp. 540-541
Author(s):  
G. Van Tendeloo ◽  
J. Van Landuyt ◽  
S. Amelinckx
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Stacking Sequence ◽  
X Ray ◽  
Powerful Technique ◽  
Resolution Study ◽  
The Ideal

Polytypism has been studied for a number of years and a wide variety of stacking sequences has been detected and analysed. SiC is the prototype material in this respect; see e.g. Electron microscopy under high resolution conditions when combined with x-ray measurements is a very powerful technique to elucidate the correct stacking sequence or to study polytype transformations and deviations from the ideal stacking sequence.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

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