Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

2020 ◽  
Vol 1004 ◽  
pp. 393-400
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Gilyong Chung ◽  
...  

Synchrotron monochromatic beam X-ray topography (SMBXT) in grazing incidence geometry shows black and white contrast for basal plane dislocations (BPDs) with Burgers vectors of opposite signs as demonstrated using ray tracing simulations. The inhomogeneous distribution of these dislocations is associated with the concave/convex shape of the basal plane. Therefore, the distribution of these two BPD types were examined for several 6-inch diameter 4H-SiC substrates and the net BPD density distribution was used for evaluating the nature and magnitude of basal plane bending in these wafers. Results show different bending behaviors along the two radial directions - [110] and [100] directions, indicating the existence of non-isotropic bending. Linear mapping of the peak shift of the 0008 reflection along the two directions was carried out using HRXRD to correlate with the results from the SMBXT measurements. Basal-plane-tilt angle calculated using the net BPD density derived from SMBXT shows a good correlation with those obtained from HRXRD measurements, which further confirmed that bending in basal plane is caused by the non-uniform distribution of BPDs. Regions of severe bending were found to be associated with both large tilt angles (95% black contrast BPDs to 5% white contrast BPDs) and abrupt changes in a and c lattice parameters i.e. local strain.

2008 ◽  
Vol 600-603 ◽  
pp. 321-324 ◽  
Author(s):  
Hirofumi Matsuhata ◽  
Hirotaka Yamaguchi ◽  
Ichiro Nagai ◽  
Toshiyuki Ohno ◽  
Ryouji Kosugi ◽  
...  

Dislocations in a substrate wafer of 4H-SiC with an epi-layer were observed using technique of monochromatic synchrotron X-ray topography in a grazing incidence geometry. Six different Burgers vectors of basal plane dislocations and threading edge dislocations were identified by changing the Bragg reflections, and by analysis of images of dislocation. We identify some relations of the Burgers vector and the dislocation contrast observed for g=11 2 8. Some of these relationships are discussed in this report.


CrystEngComm ◽  
2017 ◽  
Vol 19 (27) ◽  
pp. 3844-3849 ◽  
Author(s):  
Yingxin Cui ◽  
Xiaobo Hu ◽  
Xuejian Xie ◽  
Rongkun Wang ◽  
Xiangang Xu

Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution X-ray diffractometry (HRXRD).


2012 ◽  
pp. 2435-2435
Author(s):  
Yimei Zhu ◽  
Hiromi Inada ◽  
Achim Hartschuh ◽  
Li Shi ◽  
Ada Della Pia ◽  
...  

CrystEngComm ◽  
2018 ◽  
Vol 20 (43) ◽  
pp. 6957-6962 ◽  
Author(s):  
Xianglong Yang ◽  
Jinying Yu ◽  
Xiufang Chen ◽  
Yan Peng ◽  
Xiaobo Hu ◽  
...  

Basal plane bending of 4H-SiC single crystals grown using the sublimation method on an open or closed backside seed was measured using high-resolution X-ray diffractometry.


2007 ◽  
Vol 131-133 ◽  
pp. 327-332 ◽  
Author(s):  
Jadwiga Bak-Misiuk ◽  
Elżbieta Dynowska ◽  
Przemyslaw Romanowski ◽  
A. Shalimov ◽  
Andrzej Misiuk ◽  
...  

The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn+ ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure at up to 1270 K are reported. The defect structure was determined by an analysis of X-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. High resolution X-ray diffraction techniques based on the conventional source of radiation were used for this purpose. The crystal structure of Si:Mn and the Si1-xMnx precipitates in the implantation – disturbed layer were studied by synchrotron radiation diffraction in the grazing incidence geometry. Processing of Si:Mn results in crystallization of amorphous Si within the buried implantation – disturbed layer and in formation of Mn4Si7 precipitates. Structural changes are dependent both on temperature of the Si substrate at implantation and on processing parameters.


2010 ◽  
Author(s):  
I. D. Feranchuk ◽  
A. I. Benediktovitch ◽  
Remo Ruffini ◽  
Gregory Vereshchagin

2011 ◽  
Vol 681 ◽  
pp. 393-398 ◽  
Author(s):  
Marianna Marciszko ◽  
Andrzej Baczmanski ◽  
Nacer Zazi ◽  
Jean Paul Chopart ◽  
Alain Lodini ◽  
...  

Grazing incidence geometry, called MGID-sin2y, was applied to measure surface stresses in very thin layers (depth of a few mm) of Al-Mg alloy samples subjected to different thermal and mechanical treatments. The Göbel mirror was used to parallelize the incident X-ray beam. Perfect collimation of the beam significantly increases accuracy of determined peak position and consequently allows to measure low stresses in surface layers.


2018 ◽  
Vol 25 (2) ◽  
pp. 346-353 ◽  
Author(s):  
Ichiro Inoue ◽  
Taito Osaka ◽  
Kenji Tamasaku ◽  
Haruhiko Ohashi ◽  
Hiroshi Yamazaki ◽  
...  

An X-ray prism for the extraction of a specific harmonic of undulator radiation is proposed. By using the prism in a grazing incidence geometry, the beam axes of fundamental and harmonics of undulator radiation are separated with large angles over 10 µrad, which enables the selection of a specific harmonic with the help of apertures, while keeping a high photon flux. The concept of the harmonic separation was experimentally confirmed using X-ray beams from the X-ray free-electron laser SACLA.


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