Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods

CrystEngComm ◽  
2018 ◽  
Vol 20 (43) ◽  
pp. 6957-6962 ◽  
Author(s):  
Xianglong Yang ◽  
Jinying Yu ◽  
Xiufang Chen ◽  
Yan Peng ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystals ◽  
Basal Plane ◽  
X Ray ◽  
Sublimation Method ◽  
Plane Bending

Basal plane bending of 4H-SiC single crystals grown using the sublimation method on an open or closed backside seed was measured using high-resolution X-ray diffractometry.

Spatial variation of lattice plane bending of 4H-SiC substrates

CrystEngComm ◽  
2017 ◽  
Vol 19 (27) ◽  
pp. 3844-3849 ◽  
Author(s):  
Yingxin Cui ◽  
Xiaobo Hu ◽  
Xuejian Xie ◽  
Rongkun Wang ◽  
Xiangang Xu
Keyword(s):  
High Resolution ◽  
Spatial Variation ◽  
Basal Plane ◽  
Lattice Plane ◽  
X Ray ◽  
Plane Bending

Basal plane bending of on- and off-axis 4H-SiC substrates was measured by high-resolution X-ray diffractometry (HRXRD).

Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography

2009 ◽  
Vol 42 (6) ◽  
pp. 1068-1072 ◽  
Author(s):  
Lina Ning ◽  
Xiaobo Hu ◽  
Yingmin Wang ◽  
Xiangang Xu ◽  
Yuqiang Gao ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystals ◽  
Basal Plane ◽  
Synchrotron Radiation Beam ◽  
Radiation Beam ◽  
X Ray ◽  
Plane Bending ◽  
Spherical Curvature ◽  
Good Agreement

Basal plane bending is a structural defect in SiC single crystals caused mainly by the thermal mismatch between seed and holder, which deteriorates the quality of the wafers and blocks their applications. In this paper, basal plane bending was detected by high-resolution X-ray diffractometry (HRXRD) and transmission synchrotron white-beam X-ray topography (SWBXT). HRXRD reveals that the (0001) Si face is a concave sphere and SWBXT shows that the shapes of the Laue spots are different from that of the cross section of the synchrotron radiation beam. On the basis of a spherical curvature model for a (0001) 6H-SiC single crystal, the shapes of the Laue spots were simulated. The results are in good agreement with the experimental observations. Thus, SWBXT is an effective method for detecting basal plane bending.

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

2020 ◽  
Vol 1004 ◽  
pp. 393-400
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Gilyong Chung ◽  
...  
Keyword(s):  
Basal Plane ◽  
Local Strain ◽  
Grazing Incidence ◽  
Peak Shift ◽  
Linear Mapping ◽  
Incidence Geometry ◽  
Convex Shape ◽  
X Ray ◽  
Black And White ◽  
Plane Bending

Synchrotron monochromatic beam X-ray topography (SMBXT) in grazing incidence geometry shows black and white contrast for basal plane dislocations (BPDs) with Burgers vectors of opposite signs as demonstrated using ray tracing simulations. The inhomogeneous distribution of these dislocations is associated with the concave/convex shape of the basal plane. Therefore, the distribution of these two BPD types were examined for several 6-inch diameter 4H-SiC substrates and the net BPD density distribution was used for evaluating the nature and magnitude of basal plane bending in these wafers. Results show different bending behaviors along the two radial directions - [110] and [100] directions, indicating the existence of non-isotropic bending. Linear mapping of the peak shift of the 0008 reflection along the two directions was carried out using HRXRD to correlate with the results from the SMBXT measurements. Basal-plane-tilt angle calculated using the net BPD density derived from SMBXT shows a good correlation with those obtained from HRXRD measurements, which further confirmed that bending in basal plane is caused by the non-uniform distribution of BPDs. Regions of severe bending were found to be associated with both large tilt angles (95% black contrast BPDs to 5% white contrast BPDs) and abrupt changes in a and c lattice parameters i.e. local strain.

X-ray topo-tomography studies of linear dislocations in silicon single crystals

2018 ◽  
Vol 51 (6) ◽  
pp. 1616-1622 ◽  
Author(s):  
Victor Asadchikov ◽  
Alexey Buzmakov ◽  
Felix Chukhovskii ◽  
Irina Dyachkova ◽  
Denis Zolotov ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
High Resolution ◽  
Single Crystals ◽  
Complete Characterization ◽  
Reconstruction Technique ◽  
Algebraic Reconstruction Technique ◽  
X Ray ◽  
Laboratory Setup ◽  
Simultaneous Algebraic Reconstruction Technique

This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventional laboratory setup and the high-resolution X-ray image-detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi–Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.

Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
C. Carter ◽  
D. Asbury ◽  
C. Fazit
Keyword(s):  
Detailed Analysis ◽  
Single Crystals ◽  
Basal Plane ◽  
Defect Structures ◽  
Dislocation Generation ◽  
Screw Dislocations ◽  
X Ray ◽  
White Beam

ABSTRACTSynchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately perpendicular to the basal plane and dislocation networks lying in the basal plane. The super screw dislocations, which have open cores, are growth dislocations. These dislocations act as sources and/or sinks for the glide dislocation networks. Detailed analysis and discussion of dislocation generation phenomena and Burgers vectors will be presented.

High-resolution x-ray microstructural study of single crystals of YBa_{2}Cu_{3}O_{7-δ}

1988 ◽  
Vol 37 (4) ◽  
pp. 2301-2304 ◽  
Author(s):  
Hoydoo You ◽  
J. Axe ◽  
X. Kan ◽  
S. Moss ◽  
J. Liu ◽  
...  
Keyword(s):  
High Resolution ◽  
Single Crystals ◽  
Microstructural Study ◽  
X Ray

Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals

2009 ◽  
Vol 48 (6) ◽  
pp. 065503 ◽  
Author(s):  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
Tatsuo Fujimoto ◽  
Masashi Nakabayashi ◽  
Hiroshi Tsuge ◽  
...  
Keyword(s):  
Single Crystals ◽  
Basal Plane ◽  
Plane Bending
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