Effect of physisorption of inert organic molecules on Au(111) surface electronic states

2017 ◽  
Vol 19 (28) ◽  
pp. 18646-18651 ◽  
Author(s):  
Hirotaka Mizushima ◽  
Harunobu Koike ◽  
Kenta Kuroda ◽  
Yukiaki Ishida ◽  
Mitsuhiro Nakayama ◽  
...  

The modification of the Au(111) Shockley surface state (SS) by an n-alkane molecule (n-tetratetracontane) monolayer was observed by angle-resolved ultraviolet photoemission spectroscopy.




2011 ◽  
Vol 84 (7) ◽  
Author(s):  
A. Akin Ünal ◽  
Christian Tusche ◽  
Safia Ouazi ◽  
Sebastian Wedekind ◽  
Cheng-Tien Chiang ◽  
...  


2007 ◽  
Vol 1029 ◽  
Author(s):  
Kaname Kanai ◽  
Yukio Ouchi ◽  
Kazuhiko Seki

AbstractModification of the quasi two-dimensional surface state on Au(111) surface with adsorption of n-alkane molecule, tetratetracontane: TTC was investigated by angle-resolved photoemission spectroscopy (ARUPS) and X-ray photoemission spectroscopy (XPS). From ARUPS the energy band structure of the surface state of Au(111) surface is found to be significantly affected by TTC adsorption. The modified surface potential on Au(111) surface by the adsorption confines the surface electrons into the quantum well newly established between TTC wide energy gap and sp band gap of the Au(111) surface increasing its localization nature. Clear chemical shift in C 1s core level was observed in XPS spectrum for TTC layer right at the interface and small back-donation from Au(111) surface to TTC unoccupied states is suspected. On the other hand, a large interface dipole layer about 0.72 eV was observed by TTC adsorption. From these results, Pauli repulsion effect is expected not to have dominant effect on such large dipole formation on TTC adsorption.



1987 ◽  
Vol 94 ◽  
Author(s):  
David W. Niles ◽  
Ming Tang ◽  
Hartmut Höchst

ABSTRACTWe have used angular resolved ultraviolet photoemission spectroscopy to study the epitaxial growth of Si on GaP(110). Surface state emission obscures the top of the valence band (TVB). The Fermi level for the clean GaP(110) surface is 1.20±0.05eV above the TVB. 1ML (monolayer) of Si pins the Fermi level position at 1.40±0.05eV above the TVB. Further deposition of Si leads to a valence band discontinuity ΔEv=1.07 ±0.10eV.



2005 ◽  
Vol 82 (3) ◽  
pp. 439-445 ◽  
Author(s):  
S. Mathias ◽  
M. Wessendorf ◽  
S. Passlack ◽  
M. Aeschlimann ◽  
M. Bauer


2004 ◽  
Vol 137-140 ◽  
pp. 119-123 ◽  
Author(s):  
Matthias Muntwiler ◽  
Moritz Hoesch ◽  
Vladimir N. Petrov ◽  
Matthias Hengsberger ◽  
Luc Patthey ◽  
...  


Early experimental results comparing the two experimental methods capable of detecting surface electronic states over a broad energy band are reported. These methods are ion-neutralization spectroscopy (i. n. s.) and ultraviolet-photoemission spectroscopy (u. p. s. ) at both normal and non-normal light incidence. We find very interesting differences between the two methods in their relative sensitivity to electrons in the near-surface bulk (selvedge) and in surface adsorbates.



2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Turgut Yilmaz ◽  
Xiao Tong ◽  
Zhongwei Dai ◽  
Jerzy T. Sadowski ◽  
Eike F. Schwier ◽  
...  

AbstractFlat band electronic states are proposed to be a fundamental tool to achieve various quantum states of matter at higher temperatures due to the enhanced electronic correlations. However, materials with such peculiar electronic states are rare and often rely on subtle properties of the band structures. Here, by using angle-resolved photoemission spectroscopy, we show the emergent flat band in a VSe2 / Bi2Se3 heterostructure. Our photoemission study demonstrates that the flat band covers the entire Brillouin zone and exhibits 2D nature with a complex circular dichroism. In addition, the Dirac cone of Bi2Se3 is not reshaped by the flat band even though they overlap in proximity of the Dirac point. These features make this flat band distinguishable from the ones previously found. Thereby, the observation of a flat band in the VSe2 / Bi2Se3 heterostructure opens a promising pathway to realize strongly correlated quantum effects in topological materials.





1995 ◽  
Vol 02 (06) ◽  
pp. 723-729 ◽  
Author(s):  
V. YU. ARISTOV ◽  
G. LE LAY ◽  
M. GREHK ◽  
V.M. ZHILIN ◽  
A. TALEB-IBRAHIMI ◽  
...  

We present the first clear evidence of electron emission arising directly from a quantized two-dimensional electron channel from the InAs (110) surface covered by a few Cs atoms (≈ 0.01 Cs ML). Spectral features observed by photoemission spectroscopy using synchrotron radiation reveal discrete-energy electronic states resulting from quantization in the direction normal to the surface. The electron photoemission originates from the vicinities of [Formula: see text] points in the first and second surface Brillouin zones corresponding to the bottom of the conduction band. These findings are in agreement with self-consistent theoretical energy-level calculations using a jellium-like model.



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