scholarly journals Large-area synthesis of monolayer MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (45) ◽  
pp. 27969-27973 ◽  
Author(s):  
Yu Zhao ◽  
Hyunjea Lee ◽  
Woong Choi ◽  
Weidong Fei ◽  
Cheol Jin Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Large Area ◽  
Si Substrates ◽  
Pressure Chemical

We report the synthesis of large-area monolayer MoSe2 films extended up to a millimeter scale on SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD).

Synthesis of large-area uniform MoS 2 films by substrate-moving atmospheric pressure chemical vapor deposition: from monolayer to multilayer

2D Materials ◽  
2019 ◽  
Vol 6 (2) ◽  
pp. 025030 ◽  
Author(s):  
Tianying He ◽  
Yongjun Li ◽  
Zhifei Zhou ◽  
Cheng Zeng ◽  
Liang Qiao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Large Area ◽  
Pressure Chemical

Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE

2008 ◽  
Vol 600-603 ◽  
pp. 875-878
Author(s):  
Gwiy Sang Chung ◽  
Chang Min Ohn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Sic Films ◽  
Reactive Gas

This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates by atmospheric pressure chemical vapor deposition (APCVD). The best vertical structures were obtained by the addition of 40 % O2, 16 % Ar, and 44 % CHF3 reactive gas at 40 mTorr of chamber pressure. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. These results show that in a magnetron RIE system, it is possible to etch SiC with lower power than that of the commercial RIE system. Therefore, poly 3C-SiC etched by magnetron RIE has the potential to be applied to micro/nano electro mechanical systems (M/NEMS).

Raman Scattering Studies of Si1−xGex Layers Grown by Atmospheric Pressure Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
C. H. Perry ◽  
Feng Lu ◽  
F. Namavar ◽  
N. L. Rowell
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Quantitative Measure ◽  
Chemical Vapor ◽  
Rocking Curve ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Characterization Studies ◽  
Highly Strained

ABSTRACTRoom temperature Raman spectra are reported of Si1−xGex layers on Si substrates (for 0.08≤x≤0.2). The samples were grown using atmospheric pressure chemical vapor deposition techniques. Layer thicknesses varied from 0.1 — 10μm. The relative frequency shift of the Si-Si phonon mode for the SiGe strained epilayers from an incommensurate pseudo-alloy of the same composition is used as a quantitative measure of the lattice strain. For thicknesses below a critical value the Raman data indicate that the films are highly strained and the growth is commensurate with the substrate whereas thicker films are partially or fully relaxed. Phonon lines are sensitive to the interfaces and alloy layers. The results are consistent with other characterization studies, such as TEM and X-ray rocking curve measurements, of the same samples.

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

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