Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE
2008 ◽
Vol 600-603
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pp. 875-878
Keyword(s):
This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates by atmospheric pressure chemical vapor deposition (APCVD). The best vertical structures were obtained by the addition of 40 % O2, 16 % Ar, and 44 % CHF3 reactive gas at 40 mTorr of chamber pressure. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. These results show that in a magnetron RIE system, it is possible to etch SiC with lower power than that of the commercial RIE system. Therefore, poly 3C-SiC etched by magnetron RIE has the potential to be applied to micro/nano electro mechanical systems (M/NEMS).
2006 ◽
Vol 45
(8A)
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pp. 6342-6345
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Keyword(s):
2013 ◽
Vol 1
(39)
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pp. 6188
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Keyword(s):
Atmospheric Pressure Chemical Vapor Deposition of Copper Thin Films: I . Horizontal Hot Wall Reactor
1991 ◽
Vol 138
(11)
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pp. 3499-3504
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Keyword(s):
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Keyword(s):
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2014 ◽
Vol 778-780
◽
pp. 251-254
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