Ladder-like polysilsesquioxane dielectrics for organic field-effect transistor applications

2017 ◽  
Vol 5 (42) ◽  
pp. 10955-10964 ◽  
Author(s):  
Mingyuan Pei ◽  
Albert S. Lee ◽  
Seung Sang Hwang ◽  
Hoichang Yang

Ladder-like polysilsesquioxanes with controlled side-substituents were synthesized and optimized as dielectric materials for flexible OFETs.

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 753
Author(s):  
Wenting Zhang ◽  
Xiaoxing Guo ◽  
Jinchao Yin ◽  
Jianhong Yang

In this work, we present a pentacene-based organic field-effect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of ± 60 V and a retention time of up to 104 s.


ACS Photonics ◽  
2021 ◽  
Author(s):  
Haripriya Kesavan ◽  
Subhamoy Sahoo ◽  
Sanjoy Jena ◽  
Jayeeta Bhattacharyya ◽  
Debdutta Ray

Author(s):  
Raka Ahmed ◽  
Arun Manna

Air-stable perylenediimide (PDI) and its derivatives, in particularly the cyano-functionalized ones have attracted great research attention for their potential use in flexible optoelectronics, organic field-effect-transistor (OFET) as n-type transport materials...


2006 ◽  
Vol 88 (12) ◽  
pp. 121907 ◽  
Author(s):  
Chong-an Di ◽  
Gui Yu ◽  
Yunqi Liu ◽  
Xinjun Xu ◽  
Yabin Song ◽  
...  

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.


2015 ◽  
Vol E98.C (2) ◽  
pp. 98-103 ◽  
Author(s):  
Masahiro MINAGAWA ◽  
Hidetsugu TAMURA ◽  
Ryo SAKIKAWA ◽  
Itsuki IKARASHI ◽  
Akira BABA ◽  
...  

2016 ◽  
Vol 225 ◽  
pp. 10-15 ◽  
Author(s):  
Shijiao Han ◽  
Xinming Zhuang ◽  
Wei Shi ◽  
Xin Yang ◽  
Lu Li ◽  
...  

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