A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

2014 ◽  
Vol 23 (8) ◽  
pp. 087305 ◽  
Author(s):  
Wei Mao ◽  
Wei-Bo She ◽  
Cui Yang ◽  
Chao Zhang ◽  
Jin-Cheng Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Analytical Model ◽  
Electron Mobility ◽  
Polarization Effect ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Two Dimensional ◽  
High Electron Mobility ◽  
Field Distributions ◽  
Channel Potential

scholarly journals Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Electronics ◽  
2019 ◽  
Vol 8 (8) ◽  
pp. 885 ◽  
Author(s):  
Yan Gu ◽  
Dongmei Chang ◽  
Haiyan Sun ◽  
Jicong Zhao ◽  
Guofeng Yang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Theoretical Study ◽  
Lattice Relaxation ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Two Dimensional ◽  
Drift Diffusion ◽  
High Electron Mobility ◽  
Al Content ◽  
Dimensional Electron Gas

An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al0.1Ga0.9N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier.

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

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