Unveiling hidden epitaxial interfaces in novel SnO2/Zn2SnO4 core–shell nanowires with a multi-domain shield via cross-sectional transmission electron microscopy

CrystEngComm ◽  
2019 ◽  
Vol 21 (12) ◽  
pp. 1895-1902 ◽  
Author(s):  
Bojia Xu ◽  
Baobao Cao
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Core Shell ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Shell Nanowires

Hidden epitaxial interfaces were revealed via cross-sectional TEM study of novel quasi-hexagonal SnO2/Zn2SnO4 core–shell nanowires.

scholarly journals Bi Incorporation and Segregation in the MBE-Grown GaAs-(Ga,Al)As-Ga(As,Bi) Core-Shell Nanowires

2021 ◽  
Author(s):  
Janusz Sadowski ◽  
Anna Kaleta ◽  
Serhii Kryvyi ◽  
Dorota Janaszko ◽  
Bogusława Kurowska ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Growth Conditions ◽  
Nanowire Growth ◽  
Core Shell ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Shell Nanowires

Abstract Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(100) substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.

Fabrication of Gold Nanotubes from Removable MgO Nanowires Templates

2008 ◽  
Vol 8 (11) ◽  
pp. 5715-5719 ◽  
Author(s):  
Hyoun Woo Kim ◽  
Jong Woo Lee ◽  
Mesfin A. Kebede ◽  
Hyo Sung Kim ◽  
Buddhudu Srinivasa ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Core Shell ◽  
X Ray Diffraction ◽  
Metallic Structures ◽  
X Ray ◽  
Transmission Electron ◽  
Shell Nanowires ◽  
Scanning Electron

We have prepared MgO/Au core–shell nanowires, subsequently demonstrating the fabrication of Au nanotubes by using MgO nanowires as a sacrificial template. The samples were characterized by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and energy-dispersive X-ray spectroscopy. MgO nanowires were coated with a conformal layer of Au via sputtering. By etching away the MgO core in aqueous (NH3)2SO4 solution, hollow nanotube-like structures of Au were readily obtained. This approach offers a potentially useful route for the fabrication of a variety of hollow metallic structures.

scholarly journals Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core–Shell Nanowires As Revealed by in situ Transmission Electron Microscopy

Nano Letters ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 7238-7246 ◽  
Author(s):  
Chao Zhang ◽  
Dmitry G. Kvashnin ◽  
Laure Bourgeois ◽  
Joseph F. S. Fernando ◽  
Konstantin Firestein ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Core Shell ◽  
Transmission Electron ◽  
Crystallographic Property ◽  
Shell Nanowires

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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