Transformation of amorphous carbon to graphene on low-index Ni surfaces during rapid thermal processing: a reactive molecular dynamics study

2019 ◽  
Vol 21 (5) ◽  
pp. 2271-2275 ◽  
Author(s):  
Xiaowei Li ◽  
Aiying Wang ◽  
Kwang-Ryeol Lee
Keyword(s):  
Molecular Dynamics ◽  
Amorphous Carbon ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Diffusion Behavior ◽  
Reactive Molecular Dynamics

Ni surfaces affected the diffusion behavior of C into Ni, dominating the formation and quality of graphene transformed from amorphous carbon.

scholarly journals A reactive molecular dynamics study on the mechanical properties of a recently synthesized amorphous carbon monolayer converted into a nanotube/nanoscroll

2021 ◽  
Author(s):  
Marcelo Lopes Pereira Junior ◽  
Wiliam Ferreira da Cunha ◽  
Douglas Soares Galvão ◽  
Luiz Antonio Ribeiro Junior
Keyword(s):  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Free Standing ◽  
Reactive Molecular Dynamics

Recently, laser-assisted chemical vapor deposition has been used to synthesize a free-standing, continuous, and stable monolayer amorphous carbon (MAC).

scholarly journals Generation of amorphous carbon models using liquid quench method: A reactive molecular dynamics study

Carbon ◽  
2017 ◽  
Vol 113 ◽  
pp. 87-99 ◽  
Author(s):  
Raghavan Ranganathan ◽  
Srujan Rokkam ◽  
Tapan Desai ◽  
Pawel Keblinski
Keyword(s):  
Molecular Dynamics ◽  
Amorphous Carbon ◽  
Reactive Molecular Dynamics ◽  
Quench Method

Role of the carbon source in the transformation of amorphous carbon to graphene during rapid thermal processing

2019 ◽  
Vol 21 (18) ◽  
pp. 9384-9390 ◽  
Author(s):  
Xiaowei Li ◽  
Yong Zhou ◽  
Xiaowei Xu ◽  
Aiying Wang ◽  
Kwang-Ryeol Lee
Keyword(s):  
Carbon Source ◽  
Amorphous Carbon ◽  
Thermal Processing ◽  
Rapid Thermal Processing

A fast transfer-free synthesis of a graphene structure can be successfully achieved by Ni-catalysed transformation of amorphous carbon (a-C) during rapid thermal processing, but the role of the a-C structure in the a-C-to-graphene transformation is still unclear.

Redistribution of Dopant and Impurity Concentrations During the Formation of Uniform Wsi2 Films by RTP

1988 ◽  
Vol 100 ◽  
Author(s):  
Michael P. Siegal ◽  
Jorge J. Santiago
Keyword(s):  
Thermal Processing ◽  
Dopant Concentration ◽  
High Vacuum ◽  
Rapid Thermal Processing ◽  
Si Substrate ◽  
Time Intervals ◽  
Boron Dopant ◽  
P Type ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy has been used to study the effects of rapid thermal processing on the formation of tetragonal tungsten disilicide thin films on Si(100), p-type 5 Omaga;, cm wafers. The substrates were chemically etched, followed by an RF sputter depostion of 710Å W metal. The samples were then fast radiatively processed in an RTP system for time intervals ranging from 15 to 45 seconds at high temperature (∼1100°C) under high vacuum.The redistribution of the boron dopant concentration profile is studied and shows that boron moves from the Si-substrate into the growing Wsi2 film, eventually escaping into the vacuum. Oxygen is the major impurity in these samples and its removal from the interface has been shown to improve the quality of the silicide film. Trace quantities of F, Cl, Na, K, C and Cr have also been detected.

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